2SC365 Search Results

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3657 INDUSTRIAL APPLICATIONS U n i t in mm S W I T C H I N G R E G U L A T O R A N D HI G H V O L T A G E SWITCHING APPLICATIONS. 15.9M A X. HIGH SPEED DC-DC CONVERTER APPLICATION. ' FE ATURES: 7 . Excellent Switching Times

2SA1420

Abstract: SC36 small signal transistor
Contextual Info: Ordering number: EN 1682A 2SA1420/2SC3653 PNP/ NPN Epitaxial P lanar Silicon Transistors SAßtYO i Switching Applications _ with Bias Resistor Use .Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1=47kfl ,R2=47kO ).

smd transistor marking cf

Abstract: MARKING CF smd marking CF VEBO-15V SMD BR 17 transistor smd cf 2SC3650
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain hFE=800 to 3200 . Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity,

2SC3658

Contextual Info: Inchange Semiconductor Product Specification 2SC3658 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed ・Built-in damper diode APPLICATIONS ・For color TV horizontal deflection output applications PINNING see Fig.2

2S114

Abstract: 2SA1423 3AAP 2SC3656
Contextual Info: Ordering number : EN 16 8 5 A 2SA1423/2SC3656 i PNP/NPN Epitaxial Planar Silicon Transistors SAKYO 080 Switching Appl ications with Bias Resistor finterface circuì/ Switching circuit, inverter circuit Features . With bias resistor (RlslOkU ,R2=10kfì ).

2SC3650

Abstract: 2Sc3650 equivalent MARKING CF
Contextual Info: 2SC3650 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES Low collector-emitter saturation voltage VCE sat High DC current gain Large current capacity LF amp, various drivers, muting circuit MAXIMUM RATINGS (TA=25 oC unless otherwise noted)

2SA1420

Abstract: SC36 2SA142
Contextual Info: O rdering num ber: EN 1 6 8 2 A 2SA1420/2SC3653 i PN P /N P N Epitaxial P lanar Silicon T ransistors SAiYO Switching Applications _ with BiasResistor j Ose . S w itching c i r c u i t , i n v e r t e r c i r c u i t , i n t e r f a c e c i r F e a tu re s

2SC3650

Abstract: ITR05748 ITR05749 ITR05750 ITR05751
Contextual Info: 2SC3650 Ordering number : EN1780B SANYO Semiconductors DATA SHEET 2SC3650 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Applications • LF amplifiers, various drivers, muting circuit. Features • •

Contextual Info: Ordering number: EN 1685A 2SA1423/2SC3656 i SAßiYO PNP/ NPN Epitaxial Planar SiliconTransistors i Switching Applications with Bias Resistor Use . Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1 =10ki2 ,R2=10kfl ).

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC3650 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 1.2 A ICM: Collector-base voltage

A125a

Abstract: 2SC3658 2SC3659
Contextual Info: 2SC3658,2SC36S9 • > u j > NPN = m a m w * SILICON NPN TRIPLE DIFFUSED_ S U f f , -K W ti f'fñ 1 1 .3 5 m a x . HIGH VOLTAGE, HIGH POWER SWITCHING 1 1 .6 ± 0 . 5 3.3max. T â .O ty p J 1. "< — X : B a s e 2. i ~ 3. 3 v 7 9 \ C o lle c to r 9 1 E m it t e r

c3657

Abstract: toshiba c3657
Contextual Info: 2SC3657 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3657 Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 µs max • High breakdown voltage: VCEO = 800 V

2SC3652

Abstract: Hitachi DSA00493
Contextual Info: 2SC3652 Silicon NPN Epitaxial Application High frequency amplifier Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3.5 V Collector current

Contextual Info: H ITACHI 2SC3652 SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER t . ü n i i it e r y Dimen'.Kww in mm I {JEDEC TO-126 MOD. MAXIMUM COLLECTOR DISSIPATION I ABSOLUTE MAXIMUM RATINGS (Ta-25*C> ¡ S v iiiU ii; Item U nit 2SCJ6S2 I V ( no 50 V C ollector to e m itter voltage

Contextual Info: 2SC3657 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3657 Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 µs max • High breakdown voltage: VCEO = 800 V

Contextual Info: 2SC3658 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)1.5kâ V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3659 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)1.7kâ V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3656 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.

Contextual Info: 2SC3653 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.

2SC366

Abstract: 2SA1423 SC36
Contextual Info: Ordering number: EN 1685A 2SA1423/2SC3656 i SAßiYO PNP/ NPN Epitaxial Planar SiliconTransistors i Switching Applications with Bias Resistor Use . Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1 =10ki2 ,R2=10kfl ).

Contextual Info: Ordering number : EN 1780A NO.1780A 2SC3650 NPN Epitaxial Planar Silicon Transistor High hpE» Low-Frequency General-Purpose Amp Applications Applications . LF amp, various drivers, muting circuit Features . High DC current gain hpE=800 to 3200 . Low collector-to-emitter saturation voltage CvcE(sat)“0,'’V^

J3630

Contextual Info: O rdering num ber: EN 1 6 8 2 A 2SA1420/2SC3653 i PN P /N P N Epitaxial P lanar Silicon T ransistors SAiYO Switching Applications _ with BiasResistor j // Ose . Switching circuit, inverter circuit, interface cir Features . With bias resistor (R1^7kiì fB2s47kfì ).

2SC3650

Contextual Info: 2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. Large Current Capacity. 4 High DC Current Gain Low VCE sat 1 2

2SC3657

Contextual Info: TOSHIBA 2SC3657 2SC3657 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS m HIGH SPEED DC-DC CONVERTER APPLICATIONS • • 53.2 ±0.2 15.9MAX. Excellent Switching Times : tr= 1.0/^s Max. , tf= 1.0/^s (Max.)