2SC333 Search Results

u560100

Abstract: 2SA1318 2sc3331 transistor 2SC3331 2sa131
Contextual Info: Ordering number: EN 16 00A 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors A F Am p Applications M, ,ár%& Use . Capable of being used in the low frequenoy to high frequency range. Features ♦ Large current oapaeity and wide ASO. : 2SA1318

2SC3336

Abstract: DSA003644
Contextual Info: 2SC3336 Silicon NPN Triple Diffused ADE-208-891 Z 1st. Edition Sep. 2000 Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

Contextual Info: 2SC3336 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline 1. B a s e 2. C o lle c to r F la n g e 3. E m itte r 2SC3336 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage

Hitachi DSA00164

Contextual Info: 2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector Flange 3. Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

Contextual Info: 2SC3336 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline 1. B a se 2. C o lle c to r F la n g e 3. E m itte r 2SC3336 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage

C3332

Abstract: 2SC3332S 2sc3332
Contextual Info: 2SC3332 Ordering number : EN1334E SANYO Semiconductors DATA SHEET 2SC3332 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown

2SC3330

Abstract: hFE-200 to-92 npn
Contextual Info: ST 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sc3331 transistor

Abstract: 2SA1318 2SC3331 PJ 431
Contextual Info: Ordering number: EN 16 Q 0A N 0.I6O O A ¡I 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYOi AF Amp Applications Use Capable of being used in the low frequency to high frequency range. Features . Large current capacity and wide ASO. : 2SA1318

2sc3337

Abstract: IC 4435 4435 power ic 0311S
Contextual Info: HITACHI 2SC3337 — SILICON NPN EPITAXIAL UHfVVHF WIDE BAND AMPLIFIER I o « — s- 1, HöiC 2, Emki« y Ctflcetor I« OiiTwivtirfli in isvn (JED EC TO-92) IA B SO LU TE MAXIMUM RATINGS (Ta=2yO item Symbol Collector to base voltage MAXIMUM C O LLEC TO R DISSIPATION

2SC3330

Abstract: 2SA1317 2SA131 Sanyo CV
Contextual Info: Ordering number : EN 1 5 9 9 A 2SA1317/2SC3330 N0.1599A i PNP/ NPN Epitaxial Planar SiliconTransistors SA \YO i AF Amp Applications Use . Capable of being used in the low frequency to high freqency range. Features . Large current capacity and wide ASO. : 2SA1317

my 50

Abstract: 2SC333 TEA 1019 M2167 SFE4
Contextual Info: HITACHI 2SC3337 SILICON NPN EPITAXIAL UHF/VHF WIDE BAND AMPLIFIER S- Haw 2 Emhirr 1 Coikítoí in«V» JE D E C TO-92) I A B SO LU TE MAXIMUM RATINGS (Ta=255Q liem Collector to base voltage MAXIMUM C O LLEC TO R DISSIPATION CURVE j Symbol 2SC333? 1 Un«

2SC3336

Abstract: Hitachi DSA00388
Contextual Info: 2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector Flange 3. Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

Contextual Info: 2SC3334 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3334 High-Voltage Switching Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 250 V • Low Cre: 1.8 pF (max) • Complementary to 2SA1321 Unit: mm

2sa1320

Abstract: 2SC3333
Contextual Info: 2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1320 High Voltage Switching Applications Color TV Chroma Output Applications • High voltage: VCEO = −250 V · Low Cre: 1.8 pF (max) · Complementary to 2SC3333 Unit: mm Maximum Ratings (Ta = 25°C)

2SC3330

Contextual Info: ST 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC3334

Abstract: C3334 2SA1321
Contextual Info: 2SC3334 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3334 High-Voltage Switching Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 250 V • Low Cre: 1.8 pF (max) • Complementary to 2SA1321 Unit: mm

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

Hitachi DSA002755

Contextual Info: 2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline 2SC3336 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC3330 TRANSISTOR NPN 1. EMITTER FEATURES z Large Current Capacity and Wide ASO 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

2SA1321

Abstract: 2SC3334
Contextual Info: TOSHIBA 2SC3334 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC3334 Unit in mm HIGH VOLTAGE SW ITCHING APPLICATIONS. 5.1 M AX. COLOR TV C H R O M A OUTPUT APPLICATIONS. • • • High Voltage : V q £O = 250V Low Cre : 1.8pF (Max.)

2SC3368

Abstract: 2SC3356 to 92 2sc3325 cross 2SC3356 2SC3358 2SC3369 2SA1317 2SC3371 2sa131 2SC3331
Contextual Info: - 154 - Ta=25t . *EP(äTc=25iC) 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 2SC3330 2SC3331 2SC3332 2SC3333 2SC3334 2SC3336 2SC3337 2SC3338 2SC3342 2SC3345 2SC3346 2SC3352 2SC3352A 2SC3353 2SC3353A 2SC3354 2SC3355 2SC3356 2SC3357 2SC3358 2SC3360

Hitachi DSA0076

Abstract: 2SC3127 2SC3338
Contextual Info: 2SC3338 Silicon NPN Epitaxial ADE-208-1081 Z 1st. Edition Mar. 2001 Application UHF / VHF wide band amplifier Outline UPAK 1 3 2 4 Note: Marking is “AR”. 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC3338 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: Ordering number : EN1334F 2SC3332 Bipolar Transistor 160V, 0.7A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide SOA and highly resistant to breakdown Adoption of MBIT process Specifications

Contextual Info: TOSHIBA 2SC3333 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS COLOR TV CHROMA OUTPUT APPLICATIONS 5.1 M AX. • High Voltage : V ç e o = 250V : 1.8pF (Max.) Low Cre Complementary to 2SA1320