2SC2712-G R Search Results

Contextual Info: 45E D • TOTTS-SD 0 0 1 7 0 1 1 = « T O S M TOSHIBA TRANSISTOR 2SC2712 SILICON PNP TRIPLE DIFFUSED TYPE TOSHIBA D I S C R E T E / O P T O ) AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES: • H i g h V o l t a g e a n d H igh Current.

2SC2712

Abstract: sot-23 Marking LG MARKING LG Weitron SOT 23 LY j y w sot23
Contextual Info: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage

2SC2712

Abstract: 2SC2712GR 2SC2712-BL 2SC2712-GR 2SC2712-Y 2SC2712Y 2SA1162 2SC2712-O SOT 23 LY 2SC2712-GR LG
Contextual Info: 2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low Noise: NF=1dB Typ. , 10db(Max.) Complements of the 2SA1162 A L 3 3 C B Top View CLASSIFICATION OF hFE

Contextual Info: 2SC2712 * “G” Lead Pb -Free 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 2SC2712 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc)

2SC2712

Abstract: 2SA1162
Contextual Info: 2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2712 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)

Contextual Info: 2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2712 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR  FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating

Contextual Info: UTC 2SC2712 NPN EPITAXIAL PLANAR TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES 3 *High Voltage and High Current :VCEO=50V,IC=150mA Max. *Excellent hFE Linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *High hFE:hFE=70~700 *Low Noise:NF=1dB(Typ.),10dB(MaX.)

2SA1162

Abstract: 2SC2712 transistor toshiba marking hf Marking BL SC59
Contextual Info: 2SC2712 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2712 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • • • High Voltage and High Current : V ç;e O - 50V, 1(2 —150mA (Max.) Excellent hjpg Linearity

C 029 Transistor

Abstract: UTC 2SA1162 ic utc 200 audio amplifier low noise audio npn transistor
Contextual Info: UTC 2SC2712 NPN EPITAXIAL PLANAR TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES 3 *High Voltage and High Current :VCEO=50V,IC=150mA Max. *Excellent hFE Linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *High hFE:hFE=70~700 *Low Noise:NF=1dB(Typ.),10dB(MaX.)

Contextual Info: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 1/4 12-Dec-2013 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage

transistor toshiba marking hf

Abstract: 2SA1162 2SC2712
Contextual Info: 2SC2712 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2712 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V0EO-5OV, Ic = 150mA (Max.) Excellent hjpg Linearity : hFE (Ic = 0.1mA) / hFE (Ic = 2mA) = 0.95 (Typ.)

marking CJD

Contextual Info: 2SC2712 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 2 7 12 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • + 0.5 2 .5 - t t 3 High Voltage and High Current : V0 EO = 5OV, 1(3 = 150mA (Max.) Excellent hpg Linearity

Contextual Info: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2712 Unit in mm A U D IO FR EQUENCY GENERAL PURPOSE AM PLIFIER APPLIC A TIO N S High Voltage and High Current : Vq eo = 50V, Ic = 150mA Max. • Excellent hj’E Linearity : hfE (Iq = 0.1mA) / hpE (Ic = 2mA) =0.95 (Typ.)

2sc2712

Abstract: C 029 Transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE

2SC2712

Contextual Info: MCC 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • Complementary to 2SA1162 x Case Material: Molded Plastic.

2SC2712GR

Abstract: 2sc2712
Contextual Info: MCC 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • Complementary to 2SA1162 x Case Material: Molded Plastic.

1223N

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2712 U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. +0 .5 8.5 - a i • High Voltage and High Current • Excellent hpE Linearity • High hj"E : hj'E = 70~700 • Low Noise : NF = ldB Typ. , lOdB (Max.)

k 3878

Abstract: t 3866 2SC3759 2SD1847 2sc4291 2sc3866 2SC4423 2sc3052 3882 2SC3729
Contextual Info: - ü 4t £ Type No. ^ 2SC 3860 2SC 3861 2SC 3862 2SC 3863 ✓ 2SC 3864 2SC 3865 £ Manuf. ^ S Z * SANYO = $ te T X 2 TOSHIBA B m NEC B ÎL HITACHI RN1211 2SC2548 S ± S FUJITSU A MATSUSHITA MITSUBISHI — ROHM ÜN42Í5 RT1NÍ40S DTC114ÎS te t h m. □ 175

Contextual Info: 2SA1162 PNP Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product SOT-23 A suffix of “-C” specifies halogen & lead-free A FEATURES    L 3 Low Noise : NF= 1dB Typ. , 10dB (Max.) Complementary to 2SC2712. Small Package

tt 3043

Abstract: upa74ha 2SC2320 2SC3055 2SD2172 2sc2335 3072 rohm 2SC2818 3047 PA74HA
Contextual Info: - 1 52 m - € T yp e No. 2SC 3038 r 2SC 3039 * 2SC 3040 + * 2SC 3041 2SC 3042 4 2SC 3043 < 2SC 3044 2SC 3044A 2SC 3045 2SC 3046 2SC 3047 2SC 3049 2SC 3051 ^ 2SC 3 0 5 2 / 2SC 3 0 5 3 ^ ' 2SC 3055 * 2SC 3 0 5 6 ^ 2SC 3056A 2SC 3057 # 2SC 3063 2SC 3064 2SC 3065

2SC2724

Abstract: 2SC3346 2SD4028 2SC2258 2SC400 2sc2636 2SD1111 4017 2SC3075 2SC3460
Contextual Info: - m ¡g T y p e No. 2SC 3999 it S' 2SC 4000 2SC 400 1 ^ 0 a 0 a 0a 2SC 4002 ^ = 2SC 4003 J ^ = n fâ T 2SC 4004 S H SANYO 2SC4218 & 2SC3751 U B H TOSHIBA NEC B HITACHI ±L s * ± a FUJITSU tä T MATSUSHITA h m M ITSUBISHI □ — A ROHM 2SC1473 2SC2551 2SC3672