2SC220 Search Results

2SC2200

Abstract: AC74 400V INDUSTRIAL voltage regulator
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ~5b DE | T 0e]72S 0 0007502 1 | 5t>C <DI SCR ET E/O P T O 07 50 2 D 7 ~ J ? 3 -// 2SC2200 S IL IC O N NPN T R IP L E D IF F U SE D TYPE_ INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE

2SC2209

Abstract: 2SA963
Contextual Info: •Power Transistors 2SC2209 2SC2209 Silicon NPN Epitaxial Planar Type A F Power Amplifier Complementary Pair with 2SA963 ■ Features Package Dimensions Uni t ! mm - • Large collector pow er dissipation Pc « 5W output in com plem entary pair with 2SA963

2SC2209

Abstract: 2SA963
Contextual Info: Power T ransistors 2SC2209 2SC2209 Silicon NPN Epitaxial Planar Type Package Dimensions A F Power Amplifier Complementary Pair with 2SA963 Uni t ! mm • Features • L arge collector pow er dissipation Pc • 5W o utp ut in com plem entary pair w ith 2SA963

IC 7505

Contextual Info: Power Transistors 2SA0963 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC2209 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

2SA1254

Abstract: 2SC2206
Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 1.0 4.1±0.2 2.0±0.2 4.5±0.1 R 0.9 R 0.7 2.4±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SA1254

Abstract: 2SC2206
Contextual Info: Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.1±0.2 (0.85) (Ta=25˚C) 0.45±0.05 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage

2SC2200

Abstract: 400V INDUSTRIAL voltage regulator AC74
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ~5b DE | T 0e]72S 0 0007502 1 | 5 t >C <DI S C R E T E /O P T O 07 502 D 7 ~ J ? 3 -// 2SC2200 S IL IC O N NPN T R IP L E D IF F U SE D TYPE_ INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE

10,7mhz

Abstract: 2SA1254 2SC2206
Contextual Info: Transistors 2SA1254 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2206 Unit: mm 2.5±0.1 1.0 R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO −30 V Collector-emitter voltage (Base open)

2SA963

Abstract: 2SC2209
Contextual Info: Power T ransistors 2SA963 2SA963 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Amplifier Complementary Pair with 2SC2209 ■ Features • Large collector pow er dissipation Pc • 4 ~ 5 W output in com plem entary pair with 2SC2209 ■ Absolute Maximum Ratings (Ta=25°C)

Contextual Info: Cx ^^mi-L-onaiictoi ^Pioaucii, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC2200 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in nun SWITCHING REGULATOR AND HIGH VOLTAGE

IC 7505

Contextual Info: Power Transistors 2SC2209 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA0963 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with

Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.5±0.1 4.1±0.2 (0.85) (Ta=25˚C) 0.45±0.05 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-emitter voltage (Base open)

Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol

10,7mhz

Abstract: 2SA1254 2SC2206
Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 1.0 R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO 30 V Collector-emitter voltage (Base open)

2SC2209

Abstract: 2SA0963 2SA963
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 M Di ain sc te on na tin nc ue e/ d • Large collector power dissipation PC

Collector 5v npn TRANSISTOR

Abstract: 2SC2209 2SA963
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 40V(Min) ·High Collector Power Dissipation ·Complement to Type 2SA963 APPLICATIONS ·Designed for low frequency power amplification.

2SA963

Abstract: 2SC2209 20F200
Contextual Info: Power T ranslstors 2SA963 2SA963 Silicon PNP Epitaxial Planar Type • Package Dim ensions A F Pow er Am plifier C om plem entary Pair with 2 S C 2 2 0 9 ■ Features • Large collector pow er dissipation Pc • 4 ~ 5 W output in com plem entary pair with 2SC2209

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC2209 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

2sc2258 complementary

Abstract: 2SC2206 2SC2258 2SA1254 2SC2258A 2SC2258B Ma0058
Contextual Info: P A N A S O N I C INDL/ELEK-CSEHI} 72C D | b^BSflSM □ □ □ c]145 fi K -7- 3 / - / ? 2SC2206 2SC2206 '> iJ NPN N P N Epitaxial Planar Amplifier 'J /C om plem entary Pair with 2SA1254 2SA1254 6.9±0.1 • 4# ^ /F e a t u r e s • F M /A M y t « 7 R F J i i f l i z f t j » / S u i t a b l e fo r R F A m plifier in F M /

2SC2206

Abstract: 2SA1254 transistor 2Sc2206
Contextual Info: Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC2209 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

2SA0963

Abstract: 2SC2209
Contextual Info: Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA0963 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with