2SC2099 EQUIVALENT Search Results

2SC2099

Abstract: 2SC2099 equivalent 20Wpep 12ID 2sc2099 toshiba
Contextual Info: TOSHIBA 2SC2099 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2099 2~30MHz SSB LINEAR PO W ER AM PLIFIER APPLICATIONS Unit in mm LO W SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 20WpEP (Min.) Power Gain Gp = 12dB (Min.)

2SC2099

Abstract: 2SC2099 equivalent 22AF copper wire 20WPEP
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2099 2 ~ 3 0M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics • Output Power Po-20Wpj?p Minimum Gain Gpe=12dB Efficiency nc=35%(Min.)

2sc2099

Contextual Info: TOSHIBA 2SC2099 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE QQ Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 20W pEP Gtïr = 12dB (Min.) Power Gain rj Q = 35% (Min.)

Contextual Info: T O SH IB A 2SC2099 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 Ç C 1 fl Q Q 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 20WpEP (Min.) Power Gain

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK