2SC2001 TRANSISTOR Search Results

2SC2001

Abstract: PT-600
Contextual Info: Transistors 2SC2001 USHA INDIA LTD

transistor C2001

Abstract: c2001 transistor C2001 C2001 npn 2sc2001 transistor 2sc2001
Contextual Info: MCC TM Micro Commercial Components 2SC2001 2SC2001-M 2SC2001-L 2SC2001-K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A

2SC2001

Abstract: 2sc2001 transistor
Contextual Info: 2SC2001 2SC2001 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.6 W (Tamb=25℃) 1. EMITTER 0.7 A 2. COLLECTOR 30 V 3. BASE 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

transistor 2sc2001

Abstract: 2SC2001
Contextual Info: NPN SILICON TRANSISTOR 2SC2001 DESC R IP TIO N The 2SC2001 is designed for use in output stage of portable R A D IO and cassette type tape recorder, general purpose applica­ tions. FEATURES • High total power dissipation. PT : 600 mW • High hFE and low V CE sat

transistor C2001

Abstract: c2001 transistor 2SC200
Contextual Info: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A

Contextual Info: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V

tl700

Abstract: 2SC2001 transistor 2sc2001
Contextual Info: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCR IPTIO N 2SC2001 The 2SC2001 is designed fo r use in o u tp u t stage o f portable PAC KAG E D IM E N S IO N S R A D IO and cassette type tape recorder, general purpose applica­ in m illim e te rs inches tions.

transistor C2001

Abstract: C2001 c2001 transistor 2SC2001K
Contextual Info: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A

transistor C2001

Abstract: c2001 transistor C2001 C2001 npn 2SC2001 2SC2001L 2SC2001K
Contextual Info: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A

transistor C2001

Abstract: 2SC2001K c2001 transistor 2sc2001
Contextual Info: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A

transistor C2001

Abstract: c2001 transistor
Contextual Info: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A

2SC2001

Contextual Info: DC COMPONENTS CO., LTD. 2SC2001 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83)

2SC2001

Abstract: 2sc2001 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.6 W (Tamb=25℃) 1. EMITTER 0.7 A 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR（NPN ） FEATURES Power dissipation PCM : 0.6 Collector current ICM : 0.7 Collector-base voltage V BR CBO : 30 TO—92 W （Tamb=25℃） 1. EMITTER

2SC2001

Contextual Info: 2SC2001 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol

Contextual Info: fr P 2SC2001 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISSIPATION PT=600mW * Complement To 2SA952 * High Hfe And Low Vcesat * Collector-Base Voltage VCBO=30V

Contextual Info: 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

transistor 2sc2001

Abstract: 2SC2001 2SC2001 transistor
Contextual Info: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2001

Contextual Info: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2001

Abstract: 2SC2001L 2SC200 2SC2001K 2SC2001-L 2SC2001-M 2SC2001-K
Contextual Info: 2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  High hFE and low VCE sat hFE(IC=100mA)：200(Typ) VCE(sat)(700mA)：0.2V(Typ) G

2SC2001

Contextual Info: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2001

Contextual Info: 2SC2001 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SC2001 TRANSISTOR NPN 1. EMITTER FEATURES z High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) 2. COLLECTOR 3. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)