2SC181 Search Results

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2sa1015

Contextual Info: UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815 1 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified

2SC1815

Abstract: 2SC1815L 2SA1015L-O 2SA1015LO 2SC1815 GR 2SA1015
Contextual Info: 2SC1815 L 東芝トランジスタ シリコンNPNエピタキシャル形 (PCT方式) 2SC1815(L) ○ 低周波電圧増幅用 ○ 励振段増幅用 • • • • • 単位: mm 高耐圧でしかも電流容量が大きい。 : VCEO = 50 V (最小), IC = 150 mA (最大)

2SC1819M

Contextual Info: SavantIC Semiconductor Product Specification 2SC1819M Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

Contextual Info: TO SHIBA 2SC1815 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • High Voltage and High Current : V0 EO = 50V (Min.), 10 = 150mA (Max.)

Transistor GR 1815

Abstract: 2sc1815 transistor fe2c
Contextual Info: TO SHIBA 2SC1815 Transistor Unit in m m Silicon NPN Epitaxial Type 5 . 1 MAX. Audio Frequency General Purpose Amplifier Applications Driver Stage Applications Features • High Voltage and High Current - VCE0 = 50V Min. , Ic = 150mA (Max.) • Excellent hFE Linearity

st 2sc1815

Abstract: 2SC1815 ST2SC1815 2SA1015
Contextual Info: ST 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

2SC1815-BL

Abstract: 2SC1815 2SC1815-GR 2SC1815BL 2SC1815GR 2SC1815 GR 2SC1815 Y 2SC1815O max 550 transistor
Contextual Info: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

2SC1815

Abstract: C1815
Contextual Info: MCC
          !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.

NPN C1815

Abstract: micro transistor c1815 npn
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications.

2SC1817

Abstract: TRANSISTOR PJ
Contextual Info: S El ivi i C O N D U C T O R l TEI' .i l'nTIVTP, RP POWER TRANSISTOR t * 2SC1817 is de sign od for ilF.and VHP Power Amplifier. 'Applications. Most useful for 1 2 - w a t t SSß C i t i z e n s Ba nd Transceiver O u t p u t Stage. 1„ Featui'es / , 15 W min.

2SC1812

Contextual Info: 2SC1812 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C

2SC1815

Abstract: 2SC1815 GR 2SC1815L 2SC1815L Datasheet 2SA1015 103 transistor 2sc1815 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

GR 1815

Abstract: sc 1815 2SC1815 2SC181 2SA1015 LC 1815 2sc1815 toshiba
Contextual Info: TOSHIBA 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC1815© Unit in mm AUDIO FREQUENCY VOLTAGE AM PLIFIER APPLICATIONS. LO W NOISE AM PLIFIER APPLICATIONS. • High Breakdown Voltage, High Current Capability : V ceo = 50V (Min.), l£ = 150mA (Max.)

2SC1815 sot23

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR 1 TO-92  FEATURES 3 * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

2sc1815 transistor

Abstract: 2SC1815 2SC1815 DATASHEET 2SC1815L Datasheet TRANSISTOR BL 100 2SC1815L transistor 2sc1815 2SA1015 2SC1815G BVceo-50V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

2SC1815L

Abstract: 2SC1815
Contextual Info: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • Unit: mm High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max)

2SC1815

Abstract: MICRO ELECTRONICS ltd transistor 2SC1815 GR
Contextual Info: 2SC1815 NPN SILICON TRANSISTOR TO-92B 2SC1815 is NPN silicon epitaxial transistor designed for RF, AF amplifier and general purpose applications. ECB ABSOLUTE MAXIMUM RATINGS 45 V Collector-Base Voltage vCB0 Collector-Emitter- Voltage VCEO Emitter-Base Voltage

2SC1815

Abstract: 2sc1815 toshiba 2SC1815 DATASHEET 2sc1815 transistor 2sc1815 type toshiba 2SC1815 TOSHIBA NOTE transistor 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: 2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) · Excellent hFE linearity: hFE (2) = 100 (typ.)

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2sc1815

Contextual Info: i 2SC1815 NPN $ SILICON TRANSISTOR TO-92B 2SC1815 is NPN silicon epitaxial transistor designed for RF, AF amplifier and general purpose applications. EÇEL A B S O L U T E MAXIMUM RATINGS 45V Collector-Base Voltage VCB0 Collector-Emitter Voltage VCE0 Emitter-Base Voltage

2SA1015

Abstract: 2SC1815
Contextual Info: UTC 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to 2SA1015 1 TO-92 1:EMITTER 2:COLLECTOR 3. BASE

2sc1815gr

Abstract: C1815 2SC1815-BL 2SC1815-GR 2SC1815 2SC1815BL 2SC1815 GR 2SC1815 Y 2SC1815O *c1815y
Contextual Info: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF