2SC ALL Search Results

2SC3645

Contextual Info: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page

2SC SERIES TRANSISTORS

Abstract: Transistors Bipolar Transistors PNP 2SD
Contextual Info: Bipolar transistors-2SC series Bipolar transistors-2SC series The series name of ROHM’s bipolar transistors is used to classify these products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series In addition to these series, there are similar transistors that are manufactured to the US and

Bipolar Transistors

Abstract: 2SC SERIES TRANSISTORS
Contextual Info: Bipolar transistors-2SC series Bipolar transistors-2SC series The series name of ROHM’s bipolar transistors is used to classify these products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series In addition to these series, there are similar transistors that are manufactured to the US and

A933A

Contextual Info: Transistors General Purpose Transistor -50V, 0.15A 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS •F e a tu re s 1 ) Excellent •E x te rn a l dim ensions (Units: mm) ïife linearity. 2) Com plem ents the 2SC2412K/ 2SA1576A 2SA1037AK 2SC40S1 /2SC 4617/2SC 1740S.

2SC2526

Abstract: 2SC2525 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25
Contextual Info: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2525 2SC 2526 S epte m be r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET The 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­

2106a

Abstract: 2SC4919
Contextual Info: Ordering number: EN 4765 No-4765 //_ SANYO i Il 2SC 4919 NPN E pitaxial P lanar Silicon T ransistor // Muting Circuit Applications F e a tu re s • Very small-sized package perm itting 2SC4919-applied sets to be made sm aller and slim m er.

FT3812

Abstract: 2SC2431 2SC2432 FT3862 2SA1042 2sc2132 c 2432 FUJITSU 2SC2431
Contextual Info: FUJITSU 2SC 2431 2SC 2/132 SILICON HIGH SPEED POWER TRANSISTORS F T 3 8 1 2 (F T 3 8 6 2 ) Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR (RET) T h e 2 S C 2 4 3 1 /2 S C 2 4 3 2 are silicon N P N general purpose, high p o w e r sw itching transistors fa b ric a te d w ith Fujitsu 's u n iq u e Ring E m itte r T ran sis to r (R E T ) te c h ­

LT 2105

Abstract: 2SA1611 2SC4177
Contextual Info: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE 2SC 4177 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR FEATURES PACKAGE DIMENSIONS • Complementary to 2S A 1611 in millimeters • High DC Current Gain: hpE = 200 TYP. . V qe = 6.0 V , I q = 1.0 mA

Contextual Info: 2SA1960 Silicon NPN Epitaxial HITACHI Application • • • • W ide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SC 5225. Features • High voltage large current operation.

2SC5297

Abstract: EN5291
Contextual Info: Ordering num ber:EN5291 no.5291 1/ 2SC 5297 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications i Features • High Speed : = 100ns typ. • High breakdown voltage : Vcbo= 1500V. • High reliability Adoption of HVP process .

2SC3853

Abstract: 2sa 1489 transistor 2SA1489 FM20 Sanken Transistor Mt 200 sanken audio
Contextual Info: Silicon NPN Triple Diffused Planer ☆ Complement to type 2SA1489 2SC3853 •MT-100 T03P • Outline Drawing 2 Application Example : Audio and General Purpose Electrical Characteristics Absolute Maximum Ratings (Ta=25'C) Symbol 2SC æ 53 VCBO 120 VCEO 80

101F

Abstract: ACY23 ACY23V ACY32 ACY32V Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1
Contextual Info: 2SC D • 023SbOS 0004041 4 PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ISIE6 1 5C 04041 D ACY23 ACY32 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to T0-1 . All leads are electrically insulated from the case. The collector terminal

Toshiba 2SC3281

Abstract: 2sc3281 toshiba 2sc3281 transistor toshiba 2SC3281 2SA1302 data 2-21F1A 2SA1302 Toshiba 2Sa1302 2SA1302 transistor 2SA1302 TOSHIBA
Contextual Info: TOSHIBA TRANSISTOR SEM ICO ND UCTO R TOSHIBA TECHNICAL 2SC3281 DATA SILICON NPN TRIPLE DIFFUSED TYPE 2SC 3281 PO W ER A M PLIFIER APPLICATIONS. U nit in mm ;i3.3 t 0.2 • Complementary to 2SA1302 • Recommend for 1Q0W High Fidelity Audio Frequency Amplifier

SSL-LX509F3SRD

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSF-LXH100M SRD-RP 0.55 [0 .02 2 ] 3.18 [0.125: 5.3 [0.209] 0 4 ,8 5 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2SC [00,191] PARAMETER MIN PEAK WAVELENGTH 6,00 [0 ,2 3 6 ] 3.0Û [0.118] MAX 660 FORWARD VOLTAGE REVERSE VOLTAGE

2SC1729

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB

Asy transistor

Abstract: transistor ASY TRANSISTOR ASY 75 germanium transistor asy asy70 TRANSISTOR ASY 0.25 W asy oi TRANSISTOR Q60118-Y48-D Q60118-Y48-E Q60118-Y70-D
Contextual Info: 2SC D • r- 3 7 - o i fl235b05 00QMGÛ7 b « S I E G PNP Transistors for Switching Applications A SY48 A SY70 - SIEMENS A K TI EN GE SE LL SCH AF Not for new design ASY 48 and ASY 70 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1926 is an NPN silicon epitaxial dual transistor that

TIBPAL20L8-30M

Abstract: TIBPAL20LB
Contextual Info: TIBPAL20L8-30M, TIBPAL20R4-30M, TIBPAL20RG-30M, TIBPAL20RB-30M TIBPAL20LB 25C, TIBPAL20R4 25C, TIBPAL20R6-2SC, TIBPAL20R8 25C LOW-POWER HIGH PERFORMANCE IMPACT PAL CIRCUITS D2920. MAY 1987-REVISED DECEMBER 1987 • • Low-Power, High Performance Reduced Ic e of 1 0 5 m A Max

2005A

Abstract: 2SC3000 J160 transistor marking JB
Contextual Info: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SC3779

Abstract: U40j 2SC3779 transistor
Contextual Info: Ordering number : EN 1954C 2SC 3779 NPN Epitaxial Planar Silicon Transistor S A \ Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . OHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NF=1.5dB typ f=0.9GHz . . High power gain: MAG*l4dB typ(f=0.9GHz).

D410

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSS —LX2579IGW—1 60B REV. r - f 2.0 REV. A 5.0 .205 E.C.N. A NUMBER AND REVISION COMMENTS DATE E.C.N. # 1 1 1 4 6 . 0 1 .0 9 .0 7 C.085 ELECTRO-OPTICAL CHARACTERISTICS T* =2SC MIN PARAMETER PEAK WAVELENGTH MAX TYP

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB

2SC1970

Abstract: 2sc1970 transistor T-30 parameters S transistor NPN
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1970 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7

C102 M transistor

Contextual Info: 2SC4725 / 2SC4082 / 2SC3837K 2SC4726 / 2SC4083 / 2SC3838K/ 2SC4043S Transistors I High-Frequency Amplifier Transistor 18V, 1.5GHz 2SC4725 / 2SC4082 / 2SC 3837K •F e a tu re s •A b s o lu te maximum ratings (T a = 2 5 ”C ) Ì ) High fr. (fr= 1 .5 G H z )