2SB173 Search Results

2SB1733

Contextual Info: 2SB1733 Transistors General purpose amplification −30V, −1A 2SB1733 zDimensions (Unit : mm) 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −350mV

2SB1739

Abstract: 2SD2720 a0437 IT11163
Contextual Info: 2SB1739 / 2SD2720 Ordering number : ENA0437A SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1739 / 2SD2720 Compact Motor Driver Applications Features • • • • Low saturation voltage. Contains diode between collector and emitter.

Contextual Info: 2SB1733 Transistors General purpose amplification −30V, −1A 2SB1733 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −350mV

Contextual Info: 2SB1730 Transistors General purpose amplification −12V, −2A 2SB1730 zApplications Low frequency amplifier Deiver zExternal dimensions (Unit : mm) 0.2 0.2 0.85Max. 0~0.1 0.77 0.17 ROHM : TUMT3 Package 1.7 2.1 zPackaging specifications Type (1) 2.0 0.3

Contextual Info: 2SB1732 Transistors Genera purpose amplification −12V, −1.5A 2SB1732 zExternal dimensions (Unit : mm) (1) 0.2 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −200mV at IC = −500mA / IB = −25mA 1.7

Contextual Info: 2SB1731 Transistors Low frequency amplifier 2SB1731 zExternal dimensions Unit : mm (1) 0.2 zFeatures 1) A collector current is large. 2) VCE(sat) ≤−370mV at IC =−1A / IB =−50mA 1.7 2.0 (3) 0.65 0.65 1.3 0.3 (2) zApplication Low frequency amplifier

Contextual Info: 2SB1730 Transistors General purpose amplification −12V, −2A 2SB1730 zApplications Low frequency amplifier Deiver zExternal dimensions (Unit : mm) 0.2 0.2 0.85Max. 0~0.1 0.77 0.17 ROHM : TUMT3 Package 1.7 2.1 zPackaging specifications Type (1) 2.0 0.3

tr 13005

Abstract: 2SB1732 12842
Contextual Info: SPICE PARAMETER 2SB1732 by ROHM TR Div. * 2SB1732 PNP BJT model * Date: 2006/12/07 .MODEL 2SB1732 PNP + IS=750.00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 + NC=3.4598 + NK=.48699

Contextual Info: 2SB1733 Transistors General purpose amplification −30V, −1A 2SB1733 zDimensions (Unit : mm) 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −350mV

Contextual Info: 2SB1730 Transistors General purpose amplification −12V, −2A 2SB1730 zDimensions (Unit : mm) 0.2Max. zApplications Low frequency amplifier Deiver zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −180mV at IC= −1A / IB= −50mA

Contextual Info: 2SD2702 / 2SD2674 Datasheet NPN 1.5A 12V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 12V 1.5A Base Base Emitter Emitter 2SD2674 SC-96 2SD2702 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1732, 2SB1709

2SD2706

Abstract: 2SB1734
Contextual Info: Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2706 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.95 (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.65) • High forward current transfer ratio hFE

2SB1734

Abstract: 2SD2706
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2706 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 5˚ (0.65) 2 1 • Absolute Maximum Ratings Ta = 25°C

2SD2706

Abstract: 2SB1734 2sd27
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2706 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95)

Contextual Info: 2SB1732 / 2SB1709 Datasheet PNP -1.5A -12V Middle Power Transistor lOutline Parameter Value TUMT3 -12V -1.5A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1709 SC-96 2SB1732 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SD2702, 2SD2674

2SB1732

Contextual Info: 2SB1732 Transistors Genera purpose amplification −12V, −1.5A 2SB1732 zDimensions (Unit : mm) 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −200mV at IC = −500mA / IB = −25mA

2SD2706

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2706 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C

2SB175

Abstract: 2SB171 2SB175 B 2SB175 A 25817 bc185 C185 2SB170 2SB173
Contextual Info: 2SB170, 2SB171, 2SB173, 2SB175 2 SB17 0 , 2 SB17 1 , 2 SB17 3 , 2 SB17 5 MAINTENANCE^ PNP PNP Alloy Junction {KJ3&*Siiffl/Low frequency Amplifier ffiJ ^ ffiffl» # « J fK 2 S B 1 7 3 )/L o w Noise Amplifier (2SB173) 4# Unit I mm Collector mark Hfc/Features

2SB1732

Contextual Info: 2SB1732 Transistors Genera purpose amplification −12V, −1.5A 2SB1732 zExternal dimensions (Unit : mm) (1) 0.2 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −200mV at IC = −500mA / IB = −25mA Symbol

Contextual Info: 2SB1732 Transistors Genera purpose amplification −12V, −1.5A 2SB1732 zDimensions (Unit : mm) 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −200mV at IC = −500mA / IB = −25mA

2SB1731

Abstract: TUMT3
Contextual Info: 2SB1731 Transistors Low frequency amplifier 2SB1731 zDimensions Unit : mm 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) VCE(sat) ≤−370mV at IC =−1A / IB =−50mA ROHM : TUMT3 Limits Symbol VCBO −30

2SB1730

Contextual Info: 2SB1730 Transistors General purpose amplification −12V, −2A 2SB1730 zDimensions (Unit : mm) 0.2Max. zApplications Low frequency amplifier Deiver zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −180mV at IC= −1A / IB= −50mA

2SD2706

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2706 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SB1733 / 2SB1710 Datasheet PNP -1.0A -30V Middle Power Transistor lOutline Parameter Value TUMT3 -30V -1.0A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1710 SC-96 2SB1733 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2703, 2SD2675