2SB164 Search Results

2SB1647

Abstract: 2SD2560
Contextual Info: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SB1643

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1643 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

2SD2560

Abstract: 2SB1647 pnp 10A 12v 10a regulator ic
Contextual Info: Inchange Semiconductor Product Specification 2SB1647 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

B1642 transistor

Abstract: B1642 2SB1642
Contextual Info: 2SB1642 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1642 Audio Frequency Power Amplifier Applications • Low collector saturation voltage: VCE sat = −1.5 V (max) • Collector power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is fully covered with mold resin.

Contextual Info: Power Transistors 2SB1643 Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 For power amplification 1.0±0.1 M Di ain sc te on na tin nc ue e/ d 1.5±0.1 10.0±0.3 6.0±0.5 • Features ● ● 1.1max. 2.0 1.5max. High collector to emitter VCEO High collector power dissipation PC

B1641

Abstract: 2SB1641 2SD2526
Contextual Info: TO SH IBA 2SB1641 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 641 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hEE = 1500 Min. (VCE= -3 V , IC= -2 .5 A ) Low Saturation Voltage

TRANSISTOR B1640

Contextual Info: 2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525 (IC = −2 A, IB = −0.2 A)

2SD2560

Abstract: 2SB1647 DSA0016513
Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA

2SD2562

Abstract: 2sb1649
Contextual Info: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C

2sb1649

Abstract: CASET 2SD2561
Contextual Info: 7 0 Ω E 2SB1649 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) 2SB1649 Unit ICBO VCB=–150V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V °C fT –55 to +150 °C COB Tstg IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A

2SB1641

Abstract: 2SD2526 B1641
Contextual Info: 2SB1641 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1641 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)

TRANSISTOR D2525

Abstract: D2525 2SD2525 2SB1640
Contextual Info: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications • Unit: mm High DC current gain: 100 min · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) · Complementary to 2SB1640

TRANSISTOR D2525

Abstract: 2sd2525 2SB1640 D2525
Contextual Info: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640

B1642 transistor

Abstract: B1642 2sb1642
Contextual Info: 2SB1642 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1642 Audio Frequency Power Amplifier Applications • Low collector saturation voltage: VCE sat = −1.5 V (max) • Collector power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is fully covered with mold resin.

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB1641 H IGH POW ER SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. • H ig h DC C u rre n t G ain : h FE = 1500 (M in.) (V c • e = - 3 V , Iq = - 2 .5 A ) Low S a tu ra tio n V oltage

B1642 transistor

Abstract: B1642 2sb1642
Contextual Info: TOSHIBA 2SB1642 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 642 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATIONS « • • Low Collector Saturation Voltage : V ce sat = -1.5V (Max.) d c = -2.5A , IB = -0.25A) Collector Power Dissipation : P q = 25W (Tc = 25°C)

Contextual Info: Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington Unit: mm 15.5±0.5 φ 3.2±0.1 23.4 (4.5) (1.2) 18.6±0.5 (2.0) Solder Dip Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160 V Emitter to base voltage VEBO −5

2SB1645

Contextual Info: Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington Unit: mm 15.5±0.5 Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160 V Emitter to base voltage VEBO −5 V Peak collector current ICP −15 A Collector current IC

b1644

Contextual Info: 2SB1644JFRA 2SB1644J Datasheet PNP -4A -80V Power Transistor AEC-Q101 Qualified Outline Parameter Value VCEO IC 80V 4A LPT S (D2-PAK) Collector Base Emitter 2SB1644J 2SB1644JFRA (SC-83) Features 1) Suitable for Power Driver 2) Low VCE(sat) VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA)

2SB1644

Abstract: SC-83A T100
Contextual Info: 2SB1644 Transistors Power Transistor -80V, -4A 2SB1644 ! Features ! External dim ensions (Units : mm) 1) Low saturation voltage. (Typ. VcE(sat) = -0 .5 V at Ic / = -3 A / -0.3A ) Ib 2) Excellent DC current gain characteristics. ! Absolute maximum ratings (Ta = 25°C)

Contextual Info: 2SB1642 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1642 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS « « • Low Collector Saturation Voltage : V ce sat = - 1.5V (Max.) (IC = - 2.5A, IB = - 0.25A) Collector Power Dissipation : P q = 25W (Tc = 25°C)

2SD2560

Abstract: 2SB1647 2sd25
Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat)

2sb1648

Abstract: 2SD2561
Contextual Info: 7 0Ω E 2SB1648 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Unit –150 V Symbol ICBO VCEO –150 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE IB –1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C fT Tstg –55 to +150 2SB1648

Contextual Info: 2SB1641 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1641 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)