2SB1462 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462 • Package • High forward current transfer ratio hFE

Contextual Info: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .

Contextual Info: Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 Unit: mm 0.2+0.1 –0.05 3 0.75±0.15 5˚ • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 (0.375) 2 0 to 0.02

Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm 0.020±0.010 2 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 3 • Features 4 1 Parameter Symbol Rating Unit Collector-base voltage Emitter open

IC4800

Abstract: 2SB1462J 2SD2216J
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462J • Features ue pl d in an c se ed lud pl vi an m m es

2SB1462J

Abstract: 2SD2216J SC-89
Contextual Info: Transistor 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Unit: mm For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 5˚ Symbol Rating Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage

Contextual Info: Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 • High forward current transfer ratio hFE • SS-Mini type package allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216G • Features ■ Package • High forward current transfer ratio hFE • SS-Mini type package, allowing downsizing of the equipment and

Contextual Info: 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 • High forward current transfer ratio hFE

2SB1462G

Abstract: 2SD2216G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462G ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

2SB1462J

Abstract: 2SD2216J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 0.12+0.03 –0.01 (0.375) 1.60±0.05 5˚ 2 • High forward current transfer ratio hFE

Contextual Info: Transistors 2SD2216 Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage Emitter open VCBO 60 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462G • Package ■ Features • Code SSMini3-F3 • Marking Symbol: Y • Pin Name 1: Base

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB1545

Abstract: 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709
Contextual Info: - 40 - S s T y p e No. tt S Manuf. 2SA 1750 H 2SA 1751 H # 2SA 1752 H $ 2SA 1753 H if 2SA. 1755 ^ B ÍL 2SA 1757 . * h SANYO * S T O S HIBA # S NEC ï 3 HITACHI I ± I FUJITSU fâ T MATSUSHITA 2SA1156 2SA1110 2SA1383 2SA15 3 5 A m = MITSUBISHI 2SA1121 2SB970

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SA1885

Abstract: 2SB1413 2SA1115 2SA1371 2SA1792 2SA1794 2SA1323 2sb946a K 1833 2SB940
Contextual Info: - m s Type Ho. 2SA 1820 2SA 1821 2SA 1823 2SA 1824 2SA 1825 2SA 1826 2SA 1827 , 2SA 1828 2SA 1832 2SA 1833 2SA 1834 , 2SA 1835 2SA 1836 2SA 1837 r 2SA 1838 2SA 1839 2SA 1840 2SA 1841 • 2SA 1843 2SA 1844 2SA 1845 2SA 1846 2SA 1847 2SA 1854 2SA 1855 2SA 1857

UMS1

Abstract: 2sb941 nec 772 1866 2sa158 2sa1727 2SB1308 2SA1400-Z 2SA1588 2SA1745
Contextual Info: - m € T y p e No. a € Manuf. 2SA 1865 = z m SAN YO B m NEC ÍL H IT ACHI a i 2S A 1 7 4 5 2SA 1868 fé T 2S A 1 7 7 2 s 2 2SB1274 2SA 1873 K 2 2SA 1875 H * . 2SA 1878 2SA 1879 ffSTE 2SA 1881 ^ Z * 2 SA 1588 * ± a FUJITSU fò T MATSUSHITA — A ROHM 2 SB 1219