2SB142 Search Results

100w audio amplifier

Contextual Info: TOSHIBA 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Com plem entary to 2SD 2155 • Recom m end for 100W High Fidelity Audio Frequency - Amplifier O utput Stage Absolute Maximum Ratings (Ta = 25 C)

BJ 027

Abstract: 2SB1427 T100 transistor PNP marking BJ pnp SOT89
Contextual Info: 2SB1427 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1427; B J*, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = - 1 A/-50 mA

Contextual Info: 2SD2155 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm PO W ER AM PLIFIER APPLICATIONS ¿ ± 3.3 • • 0.2 Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C

2SB1429

Abstract: 2SD2155
Contextual Info: Inchange Semiconductor Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD2155 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage

2sb1426

Contextual Info: 2SB1426 -3A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  General Purpose Switching and Amplification G H Emitter Base Collector J

Contextual Info: Transistors Low V c e s a t Transistor (-20V, -3A ) I 2SB1424 / 2SA1585S •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(aat). 2SB1424 VcE(sat) = -0 .2 V (Typ.) 2SA1585S (Ic/ I b = - 2 A / - 0 . 1 A ) 2) Excellent DC curre nt gain charac­

2SD2155

Abstract: 2SB1429 55NO
Contextual Info: 2SB1429 * < 4 • mm 205MAX. • « it m -r r , • 2 S D 2 1 5 5 ¿ 3 ' y - f > > y 9 'J K .t£ * l i * » • 100W : vC EO - - i 8 o v a * * ) 7 r A * - 7 r .f * T iX S tt (T.-2S1C ) a C o a w ? * • *< - * M * i£ «Í ff * «L * vCBO -180 V VCEO -180

transistor fn 155

Contextual Info: 2SB1424 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1424; AE-fc, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lC/lB ——2 A/—0.1 A

Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

2SB1424

Contextual Info: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulate Transistors 2SB1424 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 600 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO:

2SB1426

Contextual Info: h 7 > y 7 $ / I ransistors 2SB1426 2S B 1426 PNP y V □ > h 7 > y Z $ Epitaxial Planar PNP Silicon Transistor 1E£JilftW :b4MHÆ /'L0w Freq. Power Amp. 7. h □ 7 7 "J y a ffl/S tr o b o Flash • w* 1 VcE sat)*''16^'o T fiilS /'D im e n s io n s iU n it : m m)

Contextual Info: 2SB1424 h -7 > v 7. $ / I ransistors 2 Q D 4 4 2 4 ie * * V 7 * 7 l/ - * P N P yÿ:]> h7> v;* ^ Epitaxial Planar PNP Silicon Transistor f é J IÎ& S ^ ii'Iïff l/ L o w Freq. Power Amp. • £I-Jfê v liiE l/D im e n s io n s Unit : mm 1 ) V c E(sat) A' ÎS t ' o

Contextual Info: 2SB1427 Transistor, PNP Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SB1427; BJ-*, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = - l A/-50 mA • excellent current-to-gain

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SB1424 LOW ̈ Preliminary V CE SAT PNP SILICON TRANSISTOR T RAN SI ST OR DESCRI PT I ON As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).

Contextual Info: 2SB1427 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SB1424

Abstract: 2SD2150 T100
Contextual Info: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1

2SB1429

Contextual Info: 2SB1429 SILICON PNP TRIPLE DIFFUSED TYPE POWER A MPL I F I E R APPLICATIONS. Unit in m m 20.5MAX . C omplementary to 2SD2155 # 3 .3 ±0.2 . R ecommend for 100W H i g h Fiderity A udio F requency Ampl i f i e r Output Stage. 2.5 3.0 +2.5 1 .0 -0 .2 5 MA XI M U M RATINGS Ta~25°C

Contextual Info: 2SB1427 2SD2153 Transistors I Power Transistor 20V, —2A 2SB1427 •F e a tu re « •A b s o lu te maximum ratings (T a = 2 5 t:) 1 ) LowVcE(Mt>. ( T y p .— 0 .5 V a t Ic/ I b = — 1 /— 5 0 m A ) Parameter 2 ) E x c e lle n t D C c u rre n t g a in c h a ra c te ris tic s .

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1424 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 600 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage

2sc4137

Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Contextual Info: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638

Contextual Info: Power Transistors 2SD2140 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1421 Unit: mm 15.0±0.5 4.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1

2SB1424

Abstract: Medium Power Transistor AER marking
Contextual Info: 2SB1424 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D A suffix of "-C" specifies halogen & lead-free D1 A   E E1  b1  1.BASE SOT-89  2.COLLECTOR  b L 3. EMITTER e1 FEATURES Dimensions In Millimeters Symbol Power dissipation

2SB1428

Contextual Info: 2SB1428 Transistor, PNP Features Dimensions Units : mm • available in FTL TL2 package • low collector saturation voltage, typically V CE(sat) = -0.5 V (max) at lc/ lB = -2 A /-0 .1 A • excellent current-to-gain characteristics 2SB1428 (FTL TL2) Applications

2SB1420

Abstract: SDC40
Contextual Info: 2 k Ω (80Ω) E 2SB1420 Silicon PNP Epitaxial Planar Transistor VCBO –120 V ICBO VCB=–120V –10max µA VCEO –120 V IEBO VEB=–6V –10max mA –6 V V(BR)CEO –16(Pulse–26) A hFE IC=–10mA –120min VCE=–4V, IC=–8A 2000min Unit V IB –1