2SB134 Search Results

2SB1347

Abstract: 2SD2029 SS 109
Contextual Info: Power T ransistors 2SB1347 2SB1347 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2029 U n it : mm 5.3max. 20.5max. • Features 3.0— • Very good linearity of DC current gain hFi • Wide area of safety operation (ASO)

w2a transistor

Abstract: transistor w2a 2SB1340 2SD1869 2SD1889 transistor 120v transistor w2a 40
Contextual Info: 2SB1340 2SD1889 Transistors I Power Transistor —120V, — 6A 2SB1340 •F e a t u r e s 1 ) Darlington connection for high DC current gain. 2 ) Bulll-ln resistor between base and em itter. 3 ) Built-In dam per diode. 4 ) Com plem ents the 2S D 1869. ^Absolute m axim um ratings ( T a = 2 5 'C )

2SB1341

Contextual Info: SavantIC Semiconductor Product Specification 2SB1341 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications

2SB1347

Abstract: 2SD2029
Contextual Info: SavantIC Semiconductor Product Specification 2SB1347 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2029 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier

2SB1346

Abstract: 2SD2027
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1346 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2027 APPLICATIONS

Contextual Info: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0±0.3 3.0±0.3 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −160 V

2SB1340

Contextual Info: 2SB1340 Transistor, PNP Features • available in TO-220 FP SC-67 package • Darlington connection provides high dc current gain (hFE) Dimensions (Units: mm) 2SB1340 (TO-220 FP) ««« +0-3 7' -V—o 1 ¿ 3 .U 0 .1 r— i • • damper diode is incorporated

L2505

Contextual Info: h "7 > y7 > $ / T 2SB1344 ransistors 2SB 1344 PNP y <J □ > h 7 > y X 2 11?$* V Epitaxial Planar PNP Silicon Transistor Darlington 1£i§>Jfc£2j*Sli!ffl/L o w Freq. Power Amp. • 1) h -> fS < S c T 'h F E ? - ' ) > 2) • - 3) ' K - * • I 5 ¡4 0 /D im e n s io n s (U n it: mm)

2SB1341

Contextual Info: h -y > y X $ /Transistors O C D 4 2SB1341 0 4 .4 k7>yz$ • i f - y > h>«Mft Epitaxial Planar PNP Silicon Transistor (Darlington) ¡i S ^ )litiffl/L o w Freq. Power Amp. • • * # * ? - ' J > 1) h > S f« T 2) /Dim ensions (Unit : mm) h F E ^ * '- '«

2SB1342

Abstract: transistor 2SB1342
Contextual Info: 2SB1342 h ~7> y 7. £ /T ra n s is to rs 2SB1342 x \ d $ * y - r J l ' 7 l ' —fM PN P V 'ja>h7>y7^ Epitaxial Planar PNP Silicon Transistor Darlington tfU i)j£ :fti|l i f f l / L o w Freq. Power Amp. W B r fü ll/D im e n s io n s (U n it: mm) 1 ) y - U > h > « « T ? h FE t f f c i ' o

2SB1342

Contextual Info: Inchange Semiconductor Product Specification 2SB1342 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and power driver applications

Contextual Info: Power T ransistors 2SB1347 2SB1347 Sipcon PNP Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SD2029 •Features • V ery good linearity of DC c u rre n t gain • Wide area of safety operation ASO Package Dimensions U nit : mm

2SD2062

Abstract: 2SB1345
Contextual Info: Inchange Semiconductor Product Specification 2SB1345 Silicon PNP Power Transistors • DESCRIPTION ·With TO-247 package ·Complement to type 2SD2062 ·Low collector saturation voltage APPLICATIONS ·For power drvier and general purpose applications PINNING

Contextual Info: 2SB1340 2SD1889 Transistors I Power Transistor 120V, —6A 2SB1340 •F e a tu re s •A b s o lu te maximum ratings (Ta—2 5 ^ } 1) 2) 3) 4) P aram eter Collector-base voltage C oiiector-em itter voltage Darlington connection fo r high D C current gain.

2SB1347

Abstract: 2SD2029
Contextual Info: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

D403

Abstract: 2SD2025 D-403 94L-969-D403 94L-374-B403
Contextual Info: Transistors 2SB1344 2SD2025 94L-374-B403 (94L-969-D403) 299

D403 power transistor

Abstract: D403 transistor TRANSISTOR D403 D403 A 2SB1344 100V 2A MPT3 2SD2025 D403 SC-75A 2305 transistor
Contextual Info: 2SB1344 2SD2025 Transistors I Power Transistor —100V, —8A 2SB1344 •A b s o lu te maximum ratings (Ta—25‘C ) •F e a tu re s 1) 2) 3) 4) Darlington connection fo r high D C current gain. Built-in resistor between base and emitter. Built-in dam per diode.

2SD1933

Abstract: 2SB1342 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1933 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1342 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION

2SB1344

Abstract: 2SD2025
Contextual Info: SavantIC Semiconductor Product Specification 2SB1344 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SD2025 APPLICATIONS ·For low frequency power amplifier and

2SB1347

Abstract: 2SD2029
Contextual Info: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO 160 V

Contextual Info: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −160

2SD1933

Abstract: 2SB1342 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Inchange Semiconductor Product Specification 2SD1933 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1342 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION

2sB1344

Abstract: 2SD2025
Contextual Info: Inchange Semiconductor Product Specification 2SB1344 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・DARLINGTON ・Complement to type 2SD2025 APPLICATIONS ・For low frequency power amplifier and

2SB1347

Abstract: 2SD2029
Contextual Info: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current