2SA1955F Search Results

sat 1205

Abstract: 2SA1955FV
Contextual Info: 2SA1955FV シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1955FV ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 0.22±0.05 項 目 記 号 定 格 2 単位 コ レ ク タ ･ ベ ー ス 間 電 圧

2SA1955F

Contextual Info: 2SA1955F シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1955F ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) (1) = −15 mV (標準)

2SA1955F

Contextual Info: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA

2SA1955FV

Contextual Info: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 1 2 3 Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage

Contextual Info: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA

Contextual Info: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 Large collector current: IC = −400 mA (max) 0.32±0.05 0.8±0.05 0.4 • 1.2±0.05 @IC = −10 mA/IB = −0.5 mA

Contextual Info: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA

2SA1955F

Contextual Info: 2SA1955F シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1955F ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) (1) = −15 mV (標準)

2SA1955F

Contextual Info: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA

2SA1955FV

Contextual Info: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 Characteristics Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

2SA1955F

Abstract: HN7G08FE RN1106F
Contextual Info: HN7G08FE TOSHIBA Multichip Discrete Device HN7G08FE Unit: mm General-Purpose Amplifier Applications Switching and Muting Switch Applications Q1 Low saturation voltage: VCE sat (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA Large collector current: IC = −400 mA (max)

2SA1955F

Abstract: HN7G06FU RN1104F 2-2j1a
Contextual Info: HN7G06FU TOSHIBA Multichip Discrete Device HN7G06FU • Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications • Unit: mm Combining transistor and BRT reduces the parts count, enabling the

Contextual Info: HN7G08FE TOSHIBA Multichip Discrete Device HN7G08FE Unit: mm General-Purpose Amplifier Applications Switching and Muting Switch Applications Q1 Low saturation voltage: VCE sat (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA Large collector current: IC = −400 mA (max)

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SA1955F

Abstract: HN7G08FE RN1106F BB500
Contextual Info: HN7G08FE TOSHIBA Multichip Discrete Device HN7G08FE Unit: mm General-Purpose Amplifier Applications Switching and Muting Switch Applications Q1 Low saturation voltage: VCE sat (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA Large collector current: IC = −400 mA (max)

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

2SA1955F

Abstract: HN7G08FE RN1106F
Contextual Info: HN7G08FE 東芝複合デバイス HN7G08FE パワーコントロールスイッチ用 ドライバー回路用 インタフェース回路用 単位: mm Q1 ：2SA1955F 相当 Q2 ：RN1106F 相当 Q1 絶対最大定格 Ta = 25°C 項目 記号 定格 単位