2SA180 Search Results

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1805 POW ER AM PLIFIER APPLICA TIO N S U n it in mm j 1 5 .8 ± 0 .5 | • C om p lem en tary to 2SC4690 • R ecom m end for 70W H ig h F id e lity A udio F req u en cy A m plifier •n 3.6 MAX { o u tp u t S tage. RATING

Contextual Info: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output

2SA1803

Abstract: 2SC4688
Contextual Info: JMnic Product Specification 2SA1803 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4688 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage PINNING see Fig.2

2SA1804

Abstract: TO3PFM 2SC4689 Jmnic
Contextual Info: JMnic Product Specification 2SA1804 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4689 APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage PINNING See Fig.2

2SA1804

Abstract: 2SC4689
Contextual Info: Product Specification www.jmnic.com 2SC4689 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFM package ・Complementary to 2SA1804 ・Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS ・Power amplifier applications PINNING PIN

2SA1806J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 Unit: mm 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 For high speed switching • Features

2SC4688

Abstract: 2SA1803
Contextual Info: SavantIC Semiconductor Product Specification 2SC4688 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFM package ·Complement to type 2SA1803 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage

Contextual Info: TOSHIBA 2SC4690 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4690 PO W ER AM PLIFIER APPLICATIONS U nit in mm . 1 5 .8 1 0 .5 i r • Complementary to 2SA1805 • Recommend for 70W High Fidelity Audio Frequency Amplifier ?S3.6± 0.2 V output Stage.

Contextual Info: TOSHIBA 2SA1803 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S A 1 803 Unit in mm POWER AMPLIFIER APPLICATIONS • • r 15.8±0.5,^ Complementary to 2SC4688 Recommend for 40W High Fidelity Audio Frequency Amplifier output Stage. 03.6±O .2 M A X IM U M RATINGS Ta = 25°C

Contextual Info: 2SA1802 TO SH IBA TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE 2 S A 1 802 Unit in mm A MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., < 0.6M AX. -tf- 5.2 ±0 .2 rll • Excellent hjpg Linearity • h -n n • * * rH i • •

C4688

Abstract: 2SA1803 2SC4688
Contextual Info: 2SC4688 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4688 Power Amplifier Applications Unit: mm • Complementary to 2SA1803 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Maximum Ratings Tc = 25°C Characteristics

2SA1807

Abstract: AO2000 600V PNP 230-Z 2SA1807F5 5A SF SC 30
Contextual Info: h 7 > v7> £ /Transistors 2SA1807F5 2SA 1807F5 PNP y U ^ > h Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ftft • rfi&ia/Dimenslons (U nit: mm) 1) ¡ 5 H E T £ 3 o B V ceo = -600 V 2)

2SA1803

Abstract: 2SC4688
Contextual Info: 2SA1803 TO SH IBA TOSHIBA TRANSISTOR 2 S A 1 803 POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.8±0.5 i Complementary to 2SC4688 Recommend for 40W High Fidelity Audio Frequency Amplifier output Stage. 0 3 .6 Í0 .2 3.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806G Silicon PNP epitaxial planar type For high speed switching • Features ■ Package • High speed switching • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and

2SA1807

Contextual Info: 2SA1807 2SA1862 Transistors High-voltage Switching Transistor Telephone, Power supply 2SA1807 • F ea tu re* ^Absolute m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage (V c e o = —600V) 2 ) L o w V c e i w i ) . (T y p .—0.25V at Ic/I b = —3 0 0 /—60m A)

2SA1802

Abstract: 2SC4681 A1802
Contextual Info: 2SA1802 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 802 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • • Excellent hpE Linearity : hFE l = 200-600 (Vc e = -2 V , Ic = -0 .5 A) : hFE(2) - 140 (Min.) (Vc e = -2 V , Iq = - 3 A)

2SA1805

Abstract: 2SC4690
Contextual Info: 2SA1805 TO SH IBA 2 S A 1 805 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.810.5 Complementary to 2SC4690 Recommend for 70W High Fidelity Audio Frequency Amplifier output Stage. i 0 3.6 ±0.2 3.5 MAXIMUM RATINGS Tc = 25°C

2SA1803

Abstract: 2SC4688
Contextual Info: TO SH IBA 2SC4688 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in mm 15.8 ± 0.5 Complementary to 2SA1803 Recommend for 40W High Fidelity Audio Frequency Amplifier n n f n n f S fa c rp MAXIMUM RATINGS Tc = 25°C

2SA1804

Abstract: 2SC4689
Contextual Info: TO SH IBA 2SC4689 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SC4689 Unit in mm 15.8 ± 0.5 Complementary to 2SA1804 Recommend for 55W High Fidelity Audio Frequency Amplifier n n f n n f S fa c rp MAXIMUM RATINGS Ta = 25°C

2SA1806

Abstract: SC-75
Contextual Info: Transistors 2SA1806 Silicon PNP epitaxial planar type For high speed switching Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 0.8±0.1 1.6±0.15 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current

A1803 toshiba

Abstract: 2SA1803
Contextual Info: 2SA1803 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1803 Power Amplifier Applications Unit: mm • Complementary to 2SC4688 • Recommended for 40-W high-fidelity audio frequency amplifier output stage Absolute Maximum Ratings Tc = 25°C Characteristics

2SA1806

Abstract: SC-75
Contextual Info: Transistors 2SA1806 Silicon PNP epitaxial planar type For high speed switching Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 • Absolute Maximum Ratings Ta = 25°C 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High speed switching • Low collector-emitter saturation voltage VCE(sat)

022sa

Abstract: 1733K A1733K 2SA1733
Contextual Info: 2SA1733K/2SA1808 h ~7> v 7, $ / T ransistors 2SA 1733K 2SA 1808 — PNP y lj 3 > t ' 7 > y Z $ Epitaxial Planar PNP Silicon Transistor Amplifier h 7 1 2S A 1733K 1.9+ 0.2 0.8±0. i o . 95 O .s s j • Features < )in > ÿ 2S A 1808 2.9±0.2 2) I 1 ) Emitter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching • Package • High speed switching • Low collector-emitter saturation voltage VCE(sat)