2SA118 Search Results

2SA1184

Abstract: 2sc2824
Contextual Info: TOSHIBA { D I S C R E T E / O P T O 9097250 TOSHIBA 5b CDIS C R E T E / O P T O D E ^ O T O S i: 5 òC 07606 aOOTbDt, û 2SC2824 SILICON NPN E PIT A X IA L TYPE PCT PROCESS) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 7.9MAX. FEATURES: • Complementary to 2SA1184.

2sa1186

Abstract: 2SC2837 2SA1186 2SC2837
Contextual Info: JMnic Product Specification 2SA1186 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High current capability ・Complement to type 2SC2837 APPLICATIONS ・Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SA1180

Contextual Info: JMnic Product Specification 2SA1180 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipations APPLICATIONS ・For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SA1185

Contextual Info: JMnic Product Specification 2SA1185 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High current capability ・Low collector saturation voltage APPLICATIONS ・High power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SA1189

Abstract: Hitachi DSA0097 2SA1188 2SA1190 2SA1191 2SC2853 2SC2854
Contextual Info: 2SA1188, 2SA1189 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2853 and 2SC2854 Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SA1188, 2SA1189 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1188

MT200 package

Abstract: 2SA1187 PACKAGE MT-200 VCe-12V
Contextual Info: SavantIC Semiconductor Product Specification 2SA1187 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High current capability APPLICATIONS ·Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC2837

Abstract: 2SA1186 2SC2837 2sa1186
Contextual Info: SavantIC Semiconductor Product Specification 2SC2837 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SA1186 APPLICATIONS ·For audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

Contextual Info: 2SA1182 TOSHIBA 2 S A 1 1 82 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm AU D IO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 SWITCHING APPLICATIONS • Excellent hpE Linearity : hFE( 2) = 25 (Min.)at V ce = —6V Ic = —400mA

2SA1186

Abstract: 2SC2837 2sA1186 transistor
Contextual Info: ¿Z&MOSPEC HIGH POWER PNP SILICON POWER TRANSISTORS PNP .designed for use in general-purpose amplifier and switching application. 2SA1186 FEATURES: * Recommend for 60 W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SC2837 10 AMPERE

Hitachi DSA002755

Contextual Info: 2SC2853, 2SC2854 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1188 and 2SA1189 Outline 2SC2853, 2SC2854 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SC2853 2SC2854 Unit Collector to base voltage VCBO 90

2SC5487

Abstract: 2sc5586 2SA2003 2Sb1352 2sa2042 PACKAGE MT-200 2SB1686 2SA200 MT-200
Contextual Info: 2-1 Power Transistors 2-1-4 Part No. List of General Purpose Transistors by Part No. VCBO V VCEO(V) Ic(A) PC(W) 2SA1186 –150 –150 –10 100 TO-3P Package LAPT Remarks 2SA1215 –160 –160 –15 150 MT-200 (2-screw mount) LAPT 2SA1216 –180 –180 –17

2SA1184

Abstract: 2SC282 2SC2824 AC46C
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DI S C R E T E /OPTO> 2SA1184 ‘ 0 7 266 56C " Dy- J J -/ SI LICON PNP E P IT A X IA L TYPE PCT PROCESS Unit in mm A U D I O F R E Q U E N C Y POWER A M P L I F I E R A P P L IC A T I O N S 7.9 MAX. •*1 03.11-aià

2sc6011

Abstract: 2SA2151 relay 04502 2SA2151A 2sd2083 2sb1649 2SA1215 2SA1295 2SA1386 2SB1420
Contextual Info: 2-1 Transistors Specifications List by Part Number Absolute Maximum Ratings Part Number Applications VCBO VCEO Ic Pc V (V) (A) (W) ICBO Conditions VCB (µA) (V) hFE min max Conditions VCE Ic (V) (A) 2SA1186 Audio, general-purpose –150 –150 –10 100

Contextual Info: HITACHI 2SC2853, 2SC2854 SILICON NPN EPITAXIAL LOW FREQ U EN CY AM PLIFIER Complementary pair with 2SA1188 and 2SA1189 % •j r î. Etr-uct 2. y. \ »pmni • A BSO LU TE MAXIMUM RATINGS <Ta=2rC} Item Symbol MAXIMUM CO LLECTO R DISSIPATION CURVE 2SC2&54 2SC2S5Ï

2SA1182

Abstract: 2SC2859
Contextual Info: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) • Complementary to 2SC2859.

2SD568L

Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD Max hFE *T ON) Min (Hz) Max k)N Max (A) (s) ICBO r (CE)Mt Max (Ohms) Toper Max Package Style CO D vices 20 Watts or More, (Cont'd) 5 10 2SA1185 2SB827 2SD1063 2SB754

Contextual Info: 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial PCT process 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity : • Complementary to 2SA1182. Unit: mm hFE (2) = 25 (min)

2SC2837

Abstract: 2SA1186 2SC2837 2SA1186
Contextual Info: Inchange Semiconductor Product Specification 2SC2837 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1186 APPLICATIONS ・For audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SA1180

Contextual Info: Inchange Semiconductor Product Specification 2SA1180 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1

Contextual Info: 55E » SANKEN ELECTRIC CO LTD • 7^0741 DODDTDS Mbl H S A K J Silicon PNP Epitaxial Planar ☆Complement to type 2 S C 2 8 3 7 ☆LAPT 2SA1186 Application Example : • Outline Drawing 2 .MT-100 T03P Audio and General Purpose Electrical Characteristics

Contextual Info: SANKEN ELECTRIC CO LT» 2 D000S3Ô 3 ^ S A K J 3SE D POWER TRANSISTORS Note I2SA TYPE Pc VcBO VCEO V eb o 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 1386A 2SA1488 1488A ( T a = 2 S 'C ) Ic Ib Tj (V) (A) (A) CC) -5 -10 -2 150 150 -160 -160 - 5

2SC5487

Abstract: 2SC5586 2SA2003 *c5586 2SD2641 2SC2922 2SD26 2SC3264 2SC5370
Contextual Info: 2-1 Power Transistors 2-1-4 Part No. List of General Purpose Transistors by Part No. VCBO V VCEO(V) Ic(A) PC(W) 2SA1186 –150 –150 –10 100 TO-3P Package LAPT Remarks 2SA1215 –160 –160 –15 150 MT-200 (2-screw mount) LAPT 2SA1216 –180 –180 –17

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Contextual Info: 2SA1182LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.5 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER