2SA1015 G Search Results

transistor 2sa1015y

Abstract: 2sa1015 2SA1015Y 2SA1015-Y 2SA1015 G 2SA1015 GR 2SA1015 Y 2SA1015GR A1015 GR
Contextual Info: MCC TM Micro Commercial Components 2SA1015 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.4Watts of Power Dissipation.

2SA1015

Abstract: 2sa1015gr 2SA1015 GR 2SA1015-Y A1015 y
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.

2SA1015

Abstract: 2SC1815 data 2sa1015
Contextual Info: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Capable of 0.4Watts of Power Dissipation. Collector-current: -0.15A

transistor 2sa1015y

Abstract: 2SA1015Y transistor A1015 2sa1015 transistor a1015 transistor A1015 A1015 gr 2sa1015 2sa1015 datasheet PNP 2SA1015GR
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A

2SA1015

Abstract: 2SA1015 GR 2SA1015GR 2sa1015y
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.

A1015

Abstract: 2SA1015 2SA1015 GR 2SA1015GR transistor A1015
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.

Contextual Info: 2SA1015 TOSHIBA 2SA1015© TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS LO W NOISE AM PLIFIER APPLICATIONS • High Voltage and High Current : V q E q = _ 50V (Min.), Iq = - 150mA (Max.) Excellent hFE Linearity

2SC1815

Abstract: 2SA1015L 2SA1015
Contextual Info: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

2SA1015

Abstract: 2SC1815
Contextual Info: 2SA1015 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1015 ○ 低周波増幅用 ○ 励振段増幅用 • • • • • 単位: mm 高耐圧でしかも電流容量が大きい。 : VCEO = −50 V (最小), IC = −150 mA (最大)

2SA1015

Abstract: 2SA1015L 2sa1015 datasheet 2SC1815 2SA1015 0
Contextual Info: 2SA1015 L 東芝トランジスタ シリコンPNPエピタキシャル (PCT方式) 2SA1015(L) ○ 低周波増幅用 ○ 励振段増幅用 • • • • • 単位: mm 高耐圧でしかも電流容量が大きい。 : VCEO = −50 V (最小), IC = −150 mA (最大)

2SA1015

Abstract: 2sa1015 equivalent
Contextual Info: DC COMPONENTS CO., LTD. 2SA1015 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter

ST 2SA1015

Abstract: 2sa1015 2SC1815
Contextual Info: ST 2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor ST 2SC1815 is recommended.

2SA1015

Abstract: 2sa1015 equivalent 2sa1015 transistor 2SC1815 DATASHEET 2SC1815 ST 2SA1015
Contextual Info: ST 2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor ST 2SC1815 is recommended.

st 2sc1815

Abstract: 2SA1015 2SC1815 ST2SC1815
Contextual Info: ST 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended.

2SC1815 NPN SOT-23

Abstract: 2sc1815 sot-23 2sa1015 sot-23 2SC1815 2SC1815LT1
Contextual Info: Shandong Yiguang Electronic Joint stock Co., Ltd SEMICONDUCTOR 2SC1815LT1 TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

st 2sc1815

Abstract: st2sc1815 2SA1015 2SC1815 2s*1815 transistor
Contextual Info: ST 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended.

st 2sc1815

Abstract: 2SC1815 ST2SC1815 2SA1015
Contextual Info: ST 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015 1

2SC1815

Abstract: transistor 2SC1815 2s*1815 transistor 2SC1815L 2SA1015 2sc1815 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

Contextual Info: MCC TM Micro Commercial Components Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Pin Configuration Bottom View 2SA1015

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO=-50V * Collector Current up to 150mA * High hFE Linearity * Complement to UTC 2SC1815  TO-92 ORDERING INFORMATION