2PG401 Search Results

2PG401 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2PG401		Panasonic	Insulated Gate Bipolar Transistor	Original	PDF	21.24KB	1
2PG401		Panasonic	Insulated Gate Bipolar Transistor	Original	PDF	31.49KB	2

2PG401 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IGBTs 2PG401 Insulated Gate Bipolar Transistor • Features unit: mm ● High breakdown voltage: VCES = 400V ● Allowing to control large current: IC peak = 130A ● Allowing to provide with the surface mounting package 7.0±0.3 3.5±0.2 7.2±0.3 ■ Applications	Original	2PG401	PDF
130A Abstract: 2PG401 Contextual Info: IGBTs 2PG401 Insulated Gate Bipolar Transistor • Features unit: mm ● High breakdown voltage: VCES = 400V ● Allowing to control large current: IC peak = 130A ● Allowing to provide with the surface mounting package 7.0±0.3 3.5±0.2 7.2±0.3 ■ Applications	Original	2PG401 130A 2PG401	PDF
2PG401 Contextual Info: IGBTs 2PG401 Insulated Gate Bipolar Transistor • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● High breakdown voltage: VCES = 400V ● Allowing to control large current: IC peak = 130A ● Allowing to provide with the surface mounting package	Original	2PG401 2PG401	PDF
2PG401 Contextual Info: IGBTs 2PG401 Insulated Gate Bipolar Transistor • Features unit: mm ● High breakdown voltage: VCES = 400V ● Allowing to control large current: IC peak = 130A ● Allowing to provide with the surface mounting package 7.0±0.3 3.5±0.2 7.2±0.3 ■ Applications	Original	2PG401 2PG401	PDF
"Intelligent Power Device" Abstract: "Solenoid Driver" transistor MIP504 MIP504 MIP508 MIP510 MIP511 MIP512 MIP513 MIP514 Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • IPD Intelligent Power Device Application EL Driver Application Part No. Output MOS FET Drive Voltage VCC (V) VDSS (V) ID (mA) Oscillating Frequency fOSC (kHz) 2.5 to 3.5 100 20/70 120 MIP805 Input Voltage VIN (V) Output Breakdown Voltage	Original	MIP805 MIP504 MIP510 MIP511 O-92NL-A1 MIP512 MIP514 MIP704 "Intelligent Power Device" "Solenoid Driver" transistor MIP504 MIP504 MIP508 MIP510 MIP511 MIP512 MIP513 MIP514	PDF
MIP161 Abstract: MIP164 D82R MIP103 mip160 Contextual Info: FET, IGBT, IPD • IGBTs Application Type No. Absolute Maximum Ratings lc peak lc (A) (V) (A) VcES Electrical Characteristics td (on) td (off) (ns) (ns) lc (mA) V ce (sat) (V) Packge tf (ns) No. 2PG301 400 20 130 < 2 .2 5 20 25 250 2 N Type D43 2PG302 400	OCR Scan	2PG301 2PG302 2PG351 2PG352 2PG401 oss-650V controP-28D MIP160/170 MIP161 MIP162/172 MIP164 D82R MIP103 mip160	PDF
k3025 Abstract: K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576 Contextual Info: GaAs MMIC Microwave Monolithic IC # For Amplifiers U /V CATV Wide Band Amp. Buffer Amp. Type No. NF (dB) PG (dB) Measuring Condition Circuit Configuration O .—. > ^ Application (mA) GN1010 2.0 9 3 25 100 to 2000 GN1042 2.2 10 3 40 50 to 800 GN1044 1.8	OCR Scan	GN1010 GN1042 GN1044 GN8061 GN8062 01076B N01077N 01087B 01091B 01093B k3025 K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576	PDF