130A Search Results

130A Result Highlights (5)

Part	Manufacturer	Description	Download
CA3130AT/B	Rochester Electronics LLC	CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output	PDF
CA3130AT	Rochester Electronics LLC	CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output	PDF
10106130-A004101LF	Amphenol Communications Solutions	PwrBlade+® Connector, Power Connectors, 16S+10HP STB, Vertical, Receptacle.	PDF
10106130-A908001LF	Amphenol Communications Solutions	PwrBlade+® Connector, Power Connectors, 9HP+32S+1HP+9LP STB, Vertical, Receptacle.	PDF
10106130-A004002LF	Amphenol Communications Solutions	PwrBlade+® Connector, Power Connectors, 6HP+16S+4HP STB, Vertical, Receptacle.	PDF

130A Datasheets (111)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
130A	Essentra Components	TAPERED CAP - OD RANGE: 274.1 -	Original	PDF	4.78MB
130-A	Wakefield-Vette	Fans, Thermal Management - Thermal - Accessories - PRECISION CLAMP	Original	PDF	359.03KB
130A10-29-I-B1	METZ CONNECT USA	RJ45 CAT 6 UTP MODULE	Original	PDF	880.87KB	8
130A5011	Bomar Interconnect Products	Coaxial Connectors (RF) - Adapters, Connectors, Interconnects, CONN ADAPT PLUG-PLUG N	Original	PDF		4
1.5SMC130A	SUNMATE electronic Co., LTD	Surface mount transient voltage suppressor in DO-214AB package with 1500W peak pulse power, 6.8V to 440V breakdown range, and fast response for circuit protection.Surface mount transient voltage suppressor with 1500W peak pulse power, 6.8 to 440V voltage range, DO-214AB case, and operating junction temperature from -55 to +150°C.Surface mount transient voltage suppressor in DO-214AB case, 1.5SMC series, 6.8 to 440 V breakdown voltage, 1500W peak pulse power, -55 to +150°C operating temperature, available in uni- and bi-directional versions.1.5SMC6.8A(CA) to 1.5SMC440A(CA) surface mount transient voltage suppressor with 1500W peak pulse power, 6.8V to 440V voltage range, DO-214AB package, operating junction temperature -55 to +150C.Surface mount transient voltage suppressor in DO-214AB package with 1500W peak pulse power, 6.8V to 440V breakdown range, glass passivated die, and fast response for uni- and bi-directional protection.Surface mount transient voltage suppressor in DO-214AB case, 1.5SMC series, 6.8 to 440 V breakdown voltage, 1500 W peak pulse power, -55 to +150 C operating temperature, available in uni- and bi-directional versions.1.5SMC6.8A(CA) to 1.5SMC440A(CA) surface mount transient voltage suppressor with 1500W peak pulse power, 6.8V to 440V breakdown voltage range, DO-214AB case, operating junction temperature from -55 to +150°C.Surface mount transient voltage suppressor in DO-214AB case, 1.5SMC series, 6.8 to 440 V standoff voltage, 1500 W peak pulse power, -55 to +150 C operating temperature, available in uni- and bi-directional versions.	Original	PDF
5KP130A	AK Semiconductor	5KP5.0A(CA) through 5KP220A(CA) R-6 transient voltage suppressor with 5000W peak pulse power, 5.0V to 220V working voltage range, glass passivated chip, and R-6 package for high surge current protection.	Original	PDF
JMSL10130AL	Jiangsu JieJie Microelectronics Co Ltd	100V N-channel Power MOSFET in SOT-23 package with 105 mΩ typical RDS(ON) at VGS = 10V, low gate charge, and 1.8A continuous drain current capability.	Original	PDF
SMAJ130A	Shandong Jingdao Microelectronics Co Ltd	Surface mount transient voltage suppressor with 400W peak pulse power, SMA package, stand-off voltage range 5.0V to 440V, low profile and low inductance design for space-constrained applications.400W surface mount transient voltage suppressor in SMA package, with stand-off voltage range of 5.0V to 440V, low profile, glass passivated junction, and low inductance for efficient board space utilization.	Original	PDF
P4SMAF130A	SUNMATE electronic Co., LTD	400W surface mount transient voltage suppressor diode in SMAF package, with 6.8V to 440V breakdown voltage range, glass passivated die, fast response, and plastic UL 94V-0 rated flammability.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, low leakage current.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8 to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, low leakage current.400W surface mount transient voltage suppressor diode in SMAF package, glass passivated, with 6.8 to 440V working voltage range, fast response, and high surge current capability.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability.P4SMAF6.8A(CA) to P4SMAF440A(CA) is a surface mount transient voltage suppressor diode with 400 W peak pulse power, 6.8 to 440 V breakdown voltage, glass passivated die, and operating temperature from -55 to +150 C.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability.	Original	PDF
Z1130A	SUNMATE electronic Co., LTD	Axial leaded silicon Zener diode in DO-41 package, 1.0W power dissipation, 3.3V to 400V zener voltage range, ±5% tolerance available, low leakage current, high reliability, designed for general-purpose voltage regulation applications.Axial leaded silicon Zener diode in DO-41 package, 1.0W power dissipation, 3.3V to 400V zener voltage range, low leakage current, high reliability, suitable for general-purpose voltage regulation applications.	Original	PDF
1SMC130A	SUNMATE electronic Co., LTD	Surface mount transient voltage suppressor in SMC package, 1500W peak pulse power, 5.0 to 440V working voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, excellent clamping capability.Surface mount transient voltage suppressor with 1500W peak pulse power, 5.0 to 440V breakdown voltage range, 200A surge current handling, and operating junction temperature from -55 to +150°C in DO-214AB package.Surface mount transient voltage suppressor with 1500W peak pulse power, 5.0 to 440V working voltage range, 200A surge current handling, and operating junction temperature from -55 to +150°C in DO-214AB package.Surface mount transient voltage suppressor in SMC package with 1500W peak pulse power, 5.0 to 440V working voltage range, glass passivated die, and fast response for uni- or bi-directional protection.Surface mount transient voltage suppressor with 1500W peak pulse power, 5.0 to 440V working range, DO-214AB case, operating temperature -55 to +150°C, available in uni- and bi-directional versions.Surface mount transient voltage suppressor in SMC package, 1500W peak pulse power, 5.0 to 440V working voltage range, glass passivated die, uni- and bi-directional versions available, operating temperature -55 to +150°C.Surface mount transient voltage suppressor with 1500W peak pulse power, 5.0 to 440V working voltage range, 200A surge current handling, and fast response for uni- and bi-directional protection in SMC package.Surface mount transient voltage suppressor with 1500W peak pulse power, 5.0 to 440V working range, DO-214AB case, fast response, glass passivated die, available in uni- and bi-directional versions.Surface mount transient voltage suppressor in DO-214AB package with 1500W peak pulse power, 5.0 to 440V working voltage range, 200A surge current handling, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor in DO-214AB case, 1500W peak pulse power, 5.0 to 440V voltage range, with unidirectional and bidirectional options, glass passivated die, and fast response for surge protection.	Original	PDF
P6SMB130A	Jiangsu JieJie Microelectronics Co Ltd	600W P6SMB Series TVS diode in SMB package with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and standoff voltages from 5.8V to 512V for surface mount applications.600W P6SMB Series transient voltage suppressor diodes in SMB package offer low leakage current, fast response time, high peak pulse power handling, and excellent clamping capability for surface mount applications.600W P6SMB Series transient voltage suppressor diodes in SMB package offer low profile, excellent clamping capability, 10/1000 μs pulse waveform rating, and high surge current handling for surface mount applications.600W P6SMB Series transient voltage suppressor diodes in SMB package offer low profile, low inductance, and high surge capability with 10/1000 μs pulse rating, suitable for surface mount applications requiring robust ESD and transient protection.600W P6SMB Series TVS diode in SMB package with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and standoff voltages from 5.8V to 512V for surface mount applications.	Original	PDF
SMAJ130A	Shenzhen Heketai Electronics Co Ltd	SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operate with a working peak reverse voltage range from 5V to 440V.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operating junction temperature up to 150°C, suitable for transient voltage protection applications.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, 5% or 10% breakdown voltage tolerance, low inductance, high surge current capability up to 713A, and peak pulse power rating of 400W.SMAJ5.0(A) through SMAJ440(A) series are small surface mount TVS diodes in SMA (DO-214AC) package, featuring low inductance, high surge capability up to 40A, peak pulse power of 400W at 10/1000 μs, and fast response time less than 1ps.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and operating temperature from -55 to +150 °C.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, glass passivated junction, low inductance, fast response time under 1 ps, high surge current capability up to 40 A, and peak pulse power rating of 400 W with a 10/1000 μs waveform.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and peak surge current up to 40 A.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass-passivated junctions, low inductance, fast response time below 1.0 ps, peak pulse power of 400 W, and surge current handling up to 713 A, designed for transient voltage protection.	Original	PDF
NCE0130A	NCEPOWER	NCE0130A N-Channel Enhancement Mode Power MOSFET with 100V VDS, 30A ID, and RDS(ON) less than 32mΩ at VGS=10V, featuring low gate charge, high ESD capability, and suitability for power switching and high-frequency applications.	Original	PDF

SMBJ130A	Microdiode Semiconductor	Surface mounted, low profile, 600W peak pulse, fast response, IR <1μA above 10V, 260°C/10s soldering, UL 94V-0, 5.0-440V stand-off, JEDEC DO-214AA/SMB.	Original	PDF
5.0SMDJ130A	Leiditech	5.0SMDJ series surface mount TVS diode with 5000W peak pulse power, glass passivated chip junction, low profile package, and fast response time for transient voltage protection in sensitive electronic circuits.	Original	PDF
15KP130A	Jiangsu JieJie Microelectronics Co Ltd	15KP Series 15000W transient voltage suppressors for AC line protection and high-power DC bus clamping, available in uni-directional and bi-directional types with standoff voltages from 17V to 280V, offering low surge resistance and fast response.15KP Series 15000W transient voltage suppressor for AC line protection and high-power DC bus clamping, available in uni-directional and bi-directional types with stand-off voltages from 17V to 280V, offering low clamping voltage and high surge current capability.15KP Series 15000W transient voltage suppressors for AC line protection and high-power DC bus clamping, available in uni-directional and bi-directional types with stand-off voltages from 17V to 280V, offering low surge resistance and fast response.15KP Series 15000W transient voltage suppressor for AC line protection and high-power DC bus clamping, available in uni/bi-directional types with stand-off voltages from 17V to 280V, offering low clamping voltage and high surge current capability.15KP Series 15000W transient voltage suppressors for AC line protection and high-power DC bus clamping, available in unidirectional and bidirectional types with stand-off voltages from 17V to 280V, offering low clamping voltage and high surge current capability.15KP Series 15000W Transient Voltage Suppressor for A.C. line protection and high power DC bus clamping, with unidirectional and bidirectional options from 17V to 280V, low clamping voltage, and 10/1000μs pulse rating.	Original	PDF
SMCJ130A	Microdiode Semiconductor	SMD, low profile, strain relief, glass passivated, low inductance, 1500W peak, 10/1000μs, 0.01% duty, fast response, IR <1μA, 260°C/10s, 94V-0, 5.0-440V.	Original	PDF
1.5SMC130A	Jiangsu JieJie Microelectronics Co Ltd	1.5SMC Series transient voltage suppressor diodes offer 1500W peak pulse power handling at 10/1000 μs, low clamping voltage, fast response time below 1ps, and stand-off voltages from 6.8V to 480V in a surface-mount SMC package.1500W Transient Voltage Suppressor diode in SMC package with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and standoff voltages from 6.8V to 480V for surface mount applications.	Original	PDF
P6SMB130A	SUNMATE electronic Co., LTD	Surface mount transient voltage suppressor diode in SMB/DO-214AA package with 600W peak pulse power, 6.8V to 440V breakdown range, glass passivated die, and unidirectional or bidirectional polarity options.Surface mount transient voltage suppressor diode in SMB/DO-214AA package with 600W peak pulse power, 6.8V to 440V breakdown range, glass passivated die, and fast response for surge protection.Surface mount transient voltage suppressor diode in SMB/DO-214AA package, 600W peak pulse power, 6.8 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die construction, operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode in SMB/DO-214AA package with 600W peak pulse power, 6.8V to 440V breakdown range, glass passivated die, and unidirectional or bidirectional polarity options.Surface mount transient voltage suppressor diode in SMB/DO-214AA package with 600W peak pulse power, 6.8V to 440V breakdown range, glass passivated die, and fast response for overvoltage protection.Surface mount transient voltage suppressor diode in SMB/DO-214AA package with 600W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, and fast response for circuit protection.Surface mount transient voltage suppressor diode in SMB/DO-214AA package, 600W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions.Surface mount transient voltage suppressor diode in SMB/DO-214AA package, 6.8 to 440 V breakdown voltage, 600 W peak pulse power, glass passivated die, available in uni- and bi-directional versions.	Original	PDF

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Laird, A DuPont Business 28A2913-0A2 FERRITE CORE 177 OHM HINGED
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TDK Electronics B59404A0130A062 SENSOR PTC 10KOHM 50% 0402
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YAGEO Corporation SMBJ130A-TR13 TVS DIODE 130VWM 209VC DO214AA
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STMicroelectronics SMB6F130A TVS DIODE 130VWM 209VC SMBFLAT
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TDK Corporation CGJ5K4X7R2H223K130AA CAP CER 0.022UF 500V X7R 1206
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130A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •	OCR Scan	GT2QG102 GT20G102 2-10S2C	PDF
Contextual Info: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive	OCR Scan	GT20G102	PDF
Contextual Info: TOSHIBA GT10G101 T O SH IB A IN SU LA T E D GATE BIPO LA R T R A N SIST O R SILICO N N -C H A N N E L IGBT G T 1 0 G 1 01 Unit in mm STRO BE FLASH A P PL IC A T IO N S • • • • High Input Impedance Low Saturation Voltage : VcE sat = 8V (Max.) (Iq = 130A)	OCR Scan	GT10G101	PDF
5G103 Contextual Info: TOSHIBA TENTATIVE GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 5 G 103 U nit in mm STROBE FLASH APPLICATIONS • • • • • 3rd Generation H igh Input Impedance Low Saturation Voltage ; V cE sat =8 V (M ax-) dC = 130A)	OCR Scan	GT5G103 5G103	PDF
GT8G101 Abstract: 072G Contextual Info: SILICON N CH ANN EL M O S T Y P E GT8G101 Unit in ram ST R O B E FLASH A P P L IC A T IO N S • • • Enhancement-Mode Low Saturation Voltage : V cE sat = 8V (Max.) (@Ic = 130A) 4.3V Gate Drive Collector Gate \|fJ 3.0 m. Emitter > 0.75 M A X I M U M R A T IN G S (Ta = 25°C)	OCR Scan	GT8G101 100ns GT8G101 072G	PDF
V23132-A2001-A200 Abstract: V23132-B2002-B200 V23132-A2001-B200 V23132-E2001-A200 v23132-b2002-a200 Tyco MCP 6.3 1393315-9 Power cable 25mm2 V2313 tyco mcp application Contextual Info: Automotive Relays High Current Devices High Current Relay 150 n Limiting continuous current 130A at 85°C switching ability up to 300A n Suitable for voltage levels up to 24VDC n Heat, moisture and vibration resistant n Minimal contact resistance n Dustproof and sealed versions	Original	24VDC 12VDC/24VDC 25mm2 16mm2 12VDC 12VDC V23132-A2001-A200 V23132-B2002-B200 V23132-A2001-B200 V23132-E2001-A200 v23132-b2002-a200 Tyco MCP 6.3 1393315-9 Power cable 25mm2 V2313 tyco mcp application	PDF
Rectifiers Abstract: MIMMD130S160DK Contextual Info: MIMMD130S160DK 1600V 130A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package	Original	MIMMD130S160DK Rectifiers MIMMD130S160DK	PDF
Contextual Info: Advanced Technical Information ITRMS = 200A ITAVM = 130A VRRM = 800-1800 V Thyristor Modules ECO-PAC 2 ACE-1 VRSM VRRM VDSM V VDRM V Typ 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VCO VCO VCO VCO VCO Symbol E-3 132 132 132 132 132 - 08io7 12io7 14io7	Original	08io7 12io7 14io7 16io7 18io7 SVX-18	PDF
PFT1303N Abstract: PFT1306N Contextual Info: THYRISTOR 130A Avg 300~600 Volts •回路図 CIRCUIT 1 G1 2 K1 PFT1303N PFT1306N ■外形寸法図 OUTLINE DRAWING 3 K2 K3 （単位 Dimension：mm） G2 G3 φ φ ■最大定格 Maximum Ratings 項目 Parameter くり返しピークオフ電圧	Original	PFT1303N PFT1306N PFT1303N 150VRM 25ITM 150VDM 125VD PFT1306N	PDF
GT10G102 Abstract: gt106 Contextual Info: SILICON N CHANNEL MOS TYPE GT10G102 STROBE FLASH APPLICATIONS Unit in mm 10±0.3 . High Input Impedance 0 3.2 ±0.2 2.7 ±0.2 . Low Saturation Voltage : VcE sat = 8V(Max.)(IC“ 130A) . Enhancement-Mode . 12V Gate Drive MAXIMUM RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC	OCR Scan	GT10G102 GT10G102 gt106	PDF
GT20G101 Contextual Info: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)	Original	GT20G101 2-10S2C	PDF
Contextual Info: TOSHIBA GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 Unit in mm STROBE FLASH APPLICATIONS • • • • 10.3 MAX High Input Impedance Low Saturation Voltage : V0g s a t ~ 8 V (Max.) (Iq = 130A) Enhancement-Mode	OCR Scan	GT20G101 TcS70Â	PDF
Contextual Info: Preliminary SGR15N40L / SGU15N40L N-CHANNEL IGBT FEATURES * High Input Impedance * High Peak Current Capability 130A * Easy Gate Drive APPLICATIONS *Strobe Flash ABSOLUTE MAXIMUM RATINGS Rating Units Collector-Emitter Voltage 450 V Gate-Emitter Voltage ±6	OCR Scan	SGR15N40L SGU15N40L	PDF
Contextual Info: GT20G101 SM T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive	OCR Scan	GT20G101	PDF

Contextual Info: MSFC130 Thyristor/Diode Modules 800 to 1600V 130Amp VRRM / VDRM IFAV / ITAV Applications y y y y Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features y y y y y y International standard package High Surge Capability	Original	MSFC130 130Amp E243882 MSFC130-08 MSFC130-12 MSFC130-16 VGD125â	PDF
2PG402 Contextual Info: IGBTs 2PG402 Insulated Gate Bipolar Transistor • Features unit: mm ● High breakdown voltage: VCES = 400V ● Allowing to control large current: IC peak = 130A ● Housed in the surface mounting package 2.5±0.1 2.5±0.1 6.5±0.1 5.3±0.1 4.35±0.1 3.0±0.1	Original	2PG402 2PG402	PDF
AP28G45GEM Contextual Info: AP28G45GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability C ▼ 3.3V Gate Drive ▼ Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8	Original	AP28G45GEM AP28G45GEM	PDF
MB89130A Abstract: MB89131 Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12510-9E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89130/130A Series MB89131/P131/133A/P133A/135A/ MB89P135A/130A • DESCRIPTION The MB89130/130A series has been developed as a general-purpose version of the F2MC*-8L family consisting	Original	DS07-12510-9E MB89130/130A MB89131/P131/133A/P133A/135A/ MB89P135A/PV130A MB89130A MB89131	PDF
E80276 Contextual Info: = £ ¥ * { * <+m y TM130RZ/EZ/GZ-M,-H TM130RZ/EZ/GZ-M ,-H • lT AV 130A • If ( av ) ¥ £ jM 3 ï;)? ï.130A • V rrm t ' - Î 7 ^ Î I L ^ Œ . 4 0 0 /800V 4oo/soo v • v d rm • >£-£^301/7- A	OCR Scan	TM130RZ/EZ/GZ-M TM130RZ/EZ/GZ-M 400/800V E80276 E80271 E80276	PDF
dpsn-130ab Abstract: Delta Electronics dpsN 130AB A Delta Electronics dpsN 130AB B dpsn-130ab b 130-watt Delta Electronics dpsn-130ab DPSN-130ab A Delta Electronics dpsN Delta Electronics dpsN 130AB dpsN Contextual Info: w w w. d e l t a w w. c o m DPSN-130AB A Series FEATURES Efficiency: Universal input Protection: 5.75 L x 3.36 (W) x 1.96 (H) in 3 Harmonic: Power Density: MECHANICAL DRAWING >70%@max load, nom. line Latched mode OVP, OCP, & OTP EN61000-3-2 class D 3.43 W/in 3	Original	DPSN-130AB EN61000-3-2 IEC61000-4-5, IEC61000-4-2, 130Watt Delta Electronics dpsN 130AB A Delta Electronics dpsN 130AB B dpsn-130ab b 130-watt Delta Electronics dpsn-130ab DPSN-130ab A Delta Electronics dpsN Delta Electronics dpsN 130AB dpsN	PDF
Contextual Info: 2PG302 IGBTs 2PG302 ForInsulatedGateBipolarTransistor Unit : mm • Features 3.5±0.2 7.0±0.3 ● High breakdown voltage : VCES= 400V ● Large current control possible : IC peak =130A ● Housing in the surface mounting package possible M Di ain sc te on na	Original	2PG302	PDF
Contextual Info: T H Y R IS T O R M O D U L E n o n -is o l a t e d type 130A P W B 1 3 0 A is a Thyristor module suitable for low voltage, 3 phase recifier applications. • • • • It(*v>: 130A (each device) High Surge Current 3500 A (50/60Hz) Easy Construction	OCR Scan	PWB130A 50/60Hz) PWB130A20 PWB130A30 PWB130A40 B130A	PDF
Contextual Info: MITEL DK13.FX Fast Switching Thyristor SEMICONDUCTOR Supersedes January 1996 version, D S4411 - 1.0 D S4411 -1 .1 KEY PARAMETERS 1200V DRM APPLICATIONS • High Power Inverters And Choppers. ■ UPS. March 1998 130A ^T RMS 1600A 200V/\|iS 500A/(iS 15(iS	OCR Scan	S4411 20kHz. 12FXM.	PDF
E80276 Abstract: Thyristor 1600V Contextual Info: MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE TM130RZ/EZ/GZ-24,-2H • IT AV • IF (AV) • VRRM • • • • Average on-state current . 130A Average forward current . 130A Repetitive peak reverse voltage	Original	TM130RZ/EZ/GZ-24 1200/1600V E80276 E80271 E80276 Thyristor 1600V	PDF

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Laird, A DuPont Business 28A2913-0A2

TDK Electronics B59404A0130A062

YAGEO Corporation SMBJ130A-TR13

STMicroelectronics SMB6F130A

TDK Corporation CGJ5K4X7R2H223K130AA

130A Datasheets Context Search

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E80276