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    Rochester Electronics LLC HH80552PG0882M

    IC MPU 641 3.2GHZ 775LGA
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    DigiKey HH80552PG0882M Bulk 27,366 2
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    CiXi KaiFeng Electronics Co Ltd KF1027B-02P-G00-0N-01B

    Dip Switch SPST 2 Position Surfa
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KF1027B-02P-G00-0N-01B Tube 1,000 10
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    • 10 $0.28
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    AES-USA CORPORATION AB12-PG09-90

    AB12-PG09-90 90 ELBOW CONDUIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AB12-PG09-90 419 1
    • 1 $4.88
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    Rochester Electronics LLC RK80532PG056512

    IC MPU 2 2.4GHZ 478FCPGA
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    DigiKey RK80532PG056512 Bulk 332 7
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    • 10 $43.54
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    AES-USA CORPORATION AB12-PG09

    AB12-PG09 Straight Conduit Fitti
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    DigiKey AB12-PG09 100 1
    • 1 $3.75
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    Find more 2PG0 price and stock on Findchips.com

    2PG0 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2PG001

    Abstract: Panasonic IGBT TO220 2PG002 2PG003
    Contextual Info: Fast switching 150 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series „ Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These


    Original     		2PG00X 2PG001ã 2PG002/2PG003ã 150ns 2PG002ã 190ns 2PG001 Panasonic IGBT TO220 2PG002 2PG003 PDF

    IGBT 2pg011

    Abstract: 2PG011
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/EC) 2PG011 O-220D-A1 IGBT 2pg011 2PG011 PDF

    2PG002

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1


    Original     		2002/95/EC) 2PG002 O-220F-A1 2PG002 PDF

    2PG003

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V


    Original     		2002/95/EC) 2PG003 O-220F-A1 2PG003 PDF

    2pg003

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High speed hall time: tf = 200 nsec(typ.)


    Original     		2002/95/EC) 2PG003 O-220F-A1 2pg003 PDF

    2PG011

    Abstract: 2pg009 2PG006 IGBT 2pg011 igbt display plasma TO-220D-A1 220d
    Contextual Info: Fast switching 175 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series „ Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These


    Original     		2PG00X O-220D O-220D-A1 2PG006 2PG009 2PG011 O-220D-A1 2PG011 IGBT 2pg011 igbt display plasma TO-220D-A1 220d PDF

    2pg001

    Abstract: 2PG001+equivalent
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V


    Original     		2002/95/EC) 2PG001 O-220F-A1 2PG001 2PG001+equivalent PDF

    2pg001

    Abstract: 2pg001 datasheet 2PG001 IGBT 2PG001 equivalent
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High speed hall time: tf = 250 nsec(typ.)


    Original     		2002/95/EC) 2PG001 O-220F-A1 2pg001 2pg001 datasheet 2PG001 IGBT 2PG001 equivalent PDF

    2PG009

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/EC) 2PG009 O-220D-A1 2PG009 PDF

    2PG002

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V


    Original     		2002/95/EC) 2PG002 O-220F-A1 2PG002 PDF

    2pg001

    Abstract: 2PG003
    Contextual Info: Realizes High-Speed Switching and Low VCE sat IGBT for PDP Driving 2PG001/2/3 „ Overview 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 φ3.1±0.1 2PG001⋅⋅⋅VCE(sat)<2.5V 1.3±0.2 1.4±0.1 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 2PG002/2PG003⋅⋅⋅VCE(sat)<2.4V


    Original     		2PG001/2/3 2PG001â 2PG002/2PG003â 2PG001/2/3 2pg001 2PG003 PDF

    2PG011

    Abstract: IGBT 2pg011 2pg0 2 SJN00008AED 2pg011pcta
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/EC) 2PG011 O-220D-A1 2PG011 IGBT 2pg011 2pg0 2 SJN00008AED 2pg011pcta PDF

    2PG006

    Abstract: SJN00006AED
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High-speed switching: tf = 175 ns (typ.)


    Original     		2002/95/EC) 2PG006 O-220D-A1 2PG006 SJN00006AED PDF

    2pg001

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1


    Original     		2002/95/EC) 2PG001 O-220F-A1 2pg001 PDF

    2PG006

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings TC = 25°C


    Original     		2002/95/EC) 2PG006 O-220D-A1 2PG006 PDF

    2PG009

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/EC) 2PG009 O-220D-A1 2PG009 PDF

    2pg002

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High speed hall time: tf = 190 nsec(typ.)


    Original     		2002/95/EC) 2PG002 O-220F-A1 2pg002 PDF

    2PG006

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High-speed switching: tf = 175 ns (typ.)


    Original     		2002/95/EC) 2PG006 O-220D-A1 2PG006 PDF

    2PG011

    Abstract: IGBT 2pg011 SJN00008AED
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/EC) 2PG011 O-220D-A1 2PG011 IGBT 2pg011 SJN00008AED PDF

    2pg009

    Abstract: 10mA510 2pg0
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/EC) 2PG009 O-220D-A1 2pg009 10mA510 2pg0 PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF