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    Thomas & Betts AB12-PG09

    Sealed Conduit Fitting - Straight - Compression Type - Conduit Size NC12/NW10 - PG09 Thread - Operating Temperature -40 to 120 Degrees Celsius - RoHS Compliant - IP67 - 68 Rating - Very High UV Protection - Polyamide (Nylon) - Black.
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    Master Electronics AB12-PG09
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    • 10 $4.23
    • 100 $3.43
    • 1000 $3.00
    • 10000 $2.82
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    ITT Interconnect Solutions FRCIR06A181SF80T12PG016

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    Master Electronics FRCIR06A181SF80T12PG016
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    ITT Interconnect Solutions CIR06R-22A-10P-F80-T12-PG0

    Circular Connector - Straight Plug - Male Pins - 10 Position - Shell Size-Insert 22A-10 - Bayonet Lock - Crimp Contacts.
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    Master Electronics CIR06R-22A-10P-F80-T12-PG0
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    TE Connectivity AST46PT2PG0015P4W1H000

    MOQ Reduction
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    Master Electronics AST46PT2PG0015P4W1H000
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    ITT Interconnect Solutions CIR06R22A10PF80T12PG029

    Circular Connector - Straight Plug - Male Pins - 10 Position - Shell Size-Insert 22A-10 - Bayonet Lock - Crimp Contacts.
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    Master Electronics CIR06R22A10PF80T12PG029
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    Find more 2PG0 price and stock on Findchips.com

    2PG0 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2PG001

    Abstract: Panasonic IGBT TO220 2PG002 2PG003
    Contextual Info: Fast switching 150 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series „ Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These


    Original     		2pg00x2pg0012pg002/2pg003150ns+42pg002190nspanasonic igbt to2202pg003 PDF

    IGBT 2pg011

    Abstract: 2PG011
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/ec2pg011o-220d-a1igbt 2pg011 PDF

    2PG002

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1


    Original     		2002/95/ec2pg002o-220f-a1 PDF

    2PG003

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V


    Original     		2002/95/ec2pg003o-220f-a1 PDF

    2pg003

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High speed hall time: tf = 200 nsec(typ.)


    Original     		2002/95/ec2pg003o-220f-a1 PDF

    2PG011

    Abstract: 2pg009 2PG006 IGBT 2pg011 igbt display plasma TO-220D-A1 220d
    Contextual Info: Fast switching 175 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series „ Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These


    Original     		2pg00xo-220do-220d-a12pg006+62pg0092pg011igbt 2pg011igbt display plasmato-220d-a1220d PDF

    2pg001

    Abstract: 2PG001+equivalent
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V


    Original     		2002/95/ec2pg001o-220f-a12pg001+equivalent PDF

    2pg001

    Abstract: 2pg001 datasheet 2PG001 IGBT 2PG001 equivalent
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High speed hall time: tf = 250 nsec(typ.)


    Original     		2002/95/ec2pg001o-220f-a12pg001 datasheet+22pg001 igbt2pg001 equivalent PDF

    2PG009

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/ec2pg009o-220d-a1 PDF

    2PG002

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V


    Original     		2002/95/ec2pg002o-220f-a1 PDF

    2pg001

    Abstract: 2PG003
    Contextual Info: Realizes High-Speed Switching and Low VCE sat IGBT for PDP Driving 2PG001/2/3 „ Overview 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 φ3.1±0.1 2PG001⋅⋅⋅VCE(sat)<2.5V 1.3±0.2 1.4±0.1 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 2PG002/2PG003⋅⋅⋅VCE(sat)<2.4V


    Original     		2pg001/2/32pg0012pg002/2pg0032pg003 PDF

    2PG011

    Abstract: IGBT 2pg011 2pg0 2 SJN00008AED 2pg011pcta
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/ec2pg011o-220d-a1igbt 2pg011+32pg02 sjn00008aed2pg011pcta PDF

    2PG006

    Abstract: SJN00006AED
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High-speed switching: tf = 175 ns (typ.)


    Original     		2002/95/ec2pg006o-220d-a1sjn00006aed PDF

    2pg001

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1


    Original     		2002/95/ec2pg001o-220f-a1 PDF

    2PG006

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings TC = 25°C


    Original     		2002/95/ec2pg006o-220d-a1 PDF

    2PG009

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/ec2pg009o-220d-a1 PDF

    2pg002

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High speed hall time: tf = 190 nsec(typ.)


    Original     		2002/95/ec2pg002o-220f-a1 PDF

    2PG006

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High-speed switching: tf = 175 ns (typ.)


    Original     		2002/95/ec2pg006o-220d-a1 PDF

    2PG011

    Abstract: IGBT 2pg011 SJN00008AED
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/ec2pg011o-220d-a1igbt 2pg011+1sjn00008aed PDF

    2pg009

    Abstract: 10mA510 2pg0
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/ec2pg009o-220d-a110ma510+12pg0 PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		pamp13-n1mip2f3mip2f4mip382+7mip2e7dmymip2f2mip291mip414smip2e5dmymip411mip3e3smy equivalent PDF

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		respons39o-220d-a1ma26p02maz3082j+152sc5779ma26p07maz30912sc5829ma27e020gma3df252pg011dd5x062jdg3d501dsktj04da3df50db2u308ssmini2-f5-bdsk3j02dsc3f01 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928 PDF