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2N7635 Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N7635-GA		GeneSiC Semiconductor	FETs - Single, Discrete Semiconductor Products, TRANS SJT 650V 4A TO-257	Original	PDF		6
2N7635M1		International Rectifier	60V 100kRad Hi-Rel Dual 2N 2P Channel TID Hardened MOSFET in a 14-Lead Flat Pack package; QPL part number related to IRHLG7670Z4	Original	PDF	312.57KB	16

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Navitas Semiconductor


Navitas Semiconductor 2N7635-GA TRANS SJT 650V 4A TO257
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N7635-GA	Bulk			10	1 - 10 $202.50 100 $202.50 1000 $202.50 10000 $202.50	Buy Now

2N7635 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate	Original	2N7635-GA 2N7635 22E-47 91E-27 37E-10 36E-10 50E-02 2N7635-GA	PDF
2N7635-GA SPICE Abstract: high-temperature-sic-junction-transistors Contextual Info: 2N7635-GA Section VII: SPICE Model Parameters Please copy this code from the SPICE model PDF file http://www.genesicsemi.com/images/ hit_sic/sjt/2N7635-GA_SPICE.pdf into LTSPICE (version 4) software for simulation of the 2N7635-GA. * MODEL OF GeneSiC Semiconductor Inc.	Original	2N7635-GA sic/sjt/2N7635-GA 2N7635-GA. 12-DEC-2014 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA SPICE high-temperature-sic-junction-transistors	PDF
Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate	Original	2N7635-GA 2N7635 22E-47 91E-27 37E-10 36E-10 50E-02 2N7635-GA	PDF
2N763 Contextual Info: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on)	Original	PD-97191B 2N7635M1 IRHLG7670Z4 MO-036AB) IRHLG7630Z4 MO-036AB MlL-STD-750, -164A/ 2N763	PDF
Contextual Info: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on)	Original	PD-97191B 2N7635M1 IRHLG7670Z4 MO-036AB) IRHLG7630Z4 MlL-STD-750, -164A/Â MO-036AB	PDF
MO-03 Contextual Info: PD-97191A 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω	Original	PD-97191A 2N7635M1 IRHLG7670Z4 MO-036AB) IRHLG7630Z4 MO-036AB MlL-STD-750, -164A/ MO-03	PDF
2N7635M1 Abstract: IRHLG7630Z4 IRHLG7670Z4 MO-036AB MO036 2N763 Contextual Info: PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω	Original	PD-97191B 2N7635M1 IRHLG7670Z4 MO-036AB) IRHLG7630Z4 MlL-STD-750, -164A/ MO-036AB 2N7635M1 IRHLG7630Z4 IRHLG7670Z4 MO-036AB MO036 2N763	PDF
Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area	Original	2N7635-GA 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA	PDF