2N7394 Search Results

Contextual Info: I , |. International n trt I " R Kectmer I R E P E T IT IV E A V A L A N C H E A N D Provisional Data Sheet No. PD - 9.887B dv/dt RATED HEXFET T R A N S IS T O R IR H M 7 05 4 i r h m s o 54 JAN SR 2N7394 JAN SH 2N7394 [REF: N-CHANNEL MEGA RAD HARD 60 Vo It, 0.03ft, MEGA RAD HARD HEXFET

diode smd ed 49

Abstract: 2N739 2N7394 n mosfet 60volt 30a IRHN7054 IRHN8054 JANSH2N7394U JANSR2N7394U 2N7394U
Contextual Info: PD - 90884A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHN7054 IRHN8054 2N7394U 2N7394U [REF:MIL-PRF-19500/603] N-CHANNEL Ω , MEGA RAD HARD HEXFET 60Volt, 0.027Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test

smd 662

Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Contextual Info: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254

2N7268

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2013. MIL-PRF-19500/603J 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

2N7269

Abstract: 2N7394 2N7270 2N7268 2N7269u 2N7270 mosfet 2N7268U 2N7394U marking IRH
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 July 2006. MIL-PRF-19500/603G 10 April 2006 SUPERSEDING MIL-PRF-19500/603F 10 November 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED