2N7008 Search Results

N-Channel Enhancement-Mode Vertical DMOS FETs

Abstract: 2N7008
Contextual Info: 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 7.5Ω 500mA Order Number / Package TO-92 2N7008 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

2n7008

Contextual Info: 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7008 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: Supertex inc. 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / ^DS ON I d (ON) b v dgs (max) (min) TO-92 60V 7.5Q. 500mA 2N7008 Features Advanced DMOS Technology □ Free from secondary breakdown □

DN2540N5

Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
Contextual Info: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5

A0519

Abstract: 2N7008
Contextual Info: 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7008 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2N7008

Contextual Info: 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7008 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

kd 2902

Abstract: 2N7008
Contextual Info: Order this document by 2N7008/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Small-Signal Field Effect Transistor N -C hannel E n h an cem en t-M o d e S ilic o n G ate T M O S N -C H A N N E L S M A L L -S IG N A L T M O S FET . . . are d e signed fo r h ig h vo lta g e , hig h speed a p p lica tio n s such as

2N7008

Contextual Info: 1ÔE D S I L I C O N I X INC A2SM735 0 0 m ü 3 1 T fX S ilic o n ix 2N7008 J .Æ in c o rp o ra te d T -Z 7 -Z 5 N-Channel Enhancem ent-M ode IV10S Transistor PRODUCT SUMMARY V BR DSS (V) fDS(ON) (ÍX ) Id (A) PACKAGE .60. 7,5 0.15 TO-92 2 GATE 3 DRAIN Performance Curves: VNDS06 (See Section 7)

Contextual Info: ^Supertex inc. 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs b v dss / BV if Ordering Information ^ D S 0 N qgs (max) 60V 7.5ÌÌ Order Number / Package TO-92 500mA 2N7008 Features Advanced DMOS Technology ~ Free from secondary breakdown f: Low power drive requirement

Contextual Info: Supertex inc. 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVqss ! b v dgs F*d s o n ' d (ON) (max) (min) TO-92 60V 7.50 500mA 2N7008 Features Advanced DMOS Technology i 1 Free from secondary breakdown

2N7008

Contextual Info: 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 7.5Ω 500mA Order Number / Package TO-92 2N7008 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

circuit diagram for automatic voltage regulator

Abstract: automatic change over switch circuit diagram fet N-Channel 2N7008 automatic transfer switch relay driver field-effect transistors k 3850 N-Channel fet "Field Effect Transistor"
Contextual Info: 2N7008 Small−Signal Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS …are designed for high voltage, high speed applications such as switching regulators, converters, solenoid, and relay drivers. • Silicon Gate for Fast Switching Speeds

Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3fc,7254 ODflt.t.75 2 | r-rnr , 2N7008 CASE 29-04, STYLE 22 TO-92 TO-226AA MAXIM UM RATINGS Rating Sym bol Drain-Source Voltage Drain-Gate Voltage (Rq s = 1 M il) Gate-Source Voltage Drain Current Continuous Pulsed Value Unit

2N7008

Contextual Info: 2N7008 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7008 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

2N7008

Contextual Info: 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 7.5Ω 500mA Order Number / Package TO-92 2N7008 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

sith

Abstract: 2n7008
Contextual Info: LJ S u p e r t e x in c . 2N 7008 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ ^DS<ON) ' d ON) BVdgs (max) (min) TO-92 60V 7.5Q 500mA 2N7008 Features Advanced DMOS Technology C] Free from secondary breakdown

Contextual Info: /p ì\ v0J/ N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ ^ D S O N I d (ON) BVdgs (max) (min) TO-92 60V 7.5Ì2 500mA 2N7008 Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

2N7008

Abstract: High voltage fast switching power transistor to92 125OC 2N7008-G a04260
Contextual Info: 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7008 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2N7008

Contextual Info: Supertex inc. 2N7008 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7008 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

2N7008

Abstract: 125OC 2N7008-G B0910
Contextual Info: 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7008 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2N7010

Abstract: diode 2U 14 PWS726 diode 2U PWS740-2 PWS750-4U 2N7008 PWS750-2U PWS740 2u 45 diode
Contextual Info: PWS750 Isolated, Unregulated DC/DC CONVERTER COMPONENTS FEATURES APPLICATIONS ● 100% TESTED FOR HIGH-VOLTAGE BREAKDOWN ● COMPACT-SURFACE MOUNT ● MULTICHANNEL OPERATION ● INDUSTRIAL PROCESS CONTROL EQUIPMENT ● GROUND-LOOP ELIMINATION ● PC-BASED DATA ACQUISITION

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

PWS740

Abstract: 2U 40 diode U/25/20/TN26/15/850/2U 40 diode PWS726
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BURB-BWOWWli PWS750 Isolated, Unregulated DC/DC CONVERTER COMPONENTS FEATURES APPLICATIONS • 100% TESTED FOR HIGH-VOLTAGE BREAKDOWN • COMPACT-SURFACE MOUNT • INDUSTRIAL PROCESS CONTROL EQUIPMENT

2N7008

Contextual Info: VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 220V 1.25Ω 240V 1.25Ω Order Number / Package TO-92 20-Pin C-Dip 5.0A – VN2222NC 5.0A VN2224N3 – 7 Advanced DMOS Technology High Reliability Devices