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    2N7002Q Search Results

    2N7002Q Datasheets (1)

    Diodes Incorporated
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N7002Q-7-F
    Diodes Incorporated MOSFET N-CH 60V 170MA SOT23 Original PDF 349KB
    SF Impression Pixel

    2N7002Q Price and Stock

    Diodes Incorporated

    Diodes Incorporated 2N7002Q-7-F

    Transistor: N-MOSFET; unipolar; 60V; 0.105A; Idm: 0.8A; 0.37W; SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 2N7002Q-7-F 5,773 1
    • 1 $0.31
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    Avnet Americas 2N7002Q-7-F Tape & Reel 44 Weeks 3,000
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    Mouser Electronics 2N7002Q-7-F 75,313
    • 1 $0.34
    • 10 $0.15
    • 100 $0.13
    • 1000 $0.11
    • 10000 $0.08
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    Newark () 2N7002Q-7-F Cut Tape 4,210 5
    • 1 -
    • 10 $0.21
    • 100 $0.15
    • 1000 $0.13
    • 10000 $0.13
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    2N7002Q-7-F Tape & Reel 4,210 100
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    • 100 $0.15
    • 1000 $0.13
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    Bristol Electronics 2N7002Q-7-F 13,726 1
    • 1 $0.45
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    • 100 $0.23
    • 1000 $0.09
    • 10000 $0.06
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    Quest Components () 2N7002Q-7-F 10,980
    • 1 $0.60
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    • 10000 $0.07
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    2N7002Q-7-F 10,600
    • 1 $0.19
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    • 1000 $0.06
    • 10000 $0.04
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    Avnet Silica 2N7002Q-7-F 42 Weeks 3,000
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    Maritex 2N7002Q-7-F 1 3,000
    • 1 $0.07
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    • 100 $0.07
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    • 10000 $0.06
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    Win Source Electronics 2N7002Q-7-F 867,000
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    Diodes Incorporated 2N7002Q-7-F-N

    - Tape and Reel (Alt: 2N7002Q-7-F-N)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N7002Q-7-F-N Tape & Reel 3,000
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    Mouser Electronics 2N7002Q-7-F-N
    • 1 $0.49
    • 10 $0.34
    • 100 $0.21
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    • 10000 $0.08
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    Diodes Incorporated 2N7002Q7F

    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2N7002Q7F 295
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    2N7002Q Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N7002 equivalent

    Abstract: 2N7002Q-7-F
    Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original
    2n7002210maaec-q101ds11303+22n7002 equivalent2n7002q-7-f PDF

    TP5000

    Abstract: TP5056 TP4506 TP5351 TP5046 TP4656 TP4650 TP4780 TP5006 TP5299
    Contextual Info: 1 2 9TP4721 10 TP4722 T4 TP4723 13 TP5086 TP5087 1 2 TP5088 TP4727 3 4 TP5089 BPRI# W1 A7# DEFER# A8# DRDY# A9# W2 Y4 A10# Y1 A11# A12# U1 A13# AA3 DBSY# RESET# RS0# REQ1# RS1# REQ2# RS2# BANIAS REQ3# T1 REQ4# 478FCPGA 13 13 13 13 C 13 13 AE4 24 TP5097 TP5098


    Original
    3tp4715tp47165tp4717tp4718+167tp4719tp47209tp4721tp4722tp4728tp4729tp5000tp5056tp4506tp5351tp5046tp4656tp4650tp4780tp5006tp5299 PDF

    Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original
    2n7002210maaec-q101ds11303 PDF

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original
    2000/53/ec2002/95/ec2011/65/eusor/2014-254+12sj/t11363-2006gl-106ap3039am12sn7az1117eh-3ap3031kzabg6001smbj11caztx689dmn33d8lap1901ap3502 PDF

    2N7002-13-F

    Abstract: 2N7002Q-7-F mosfet 2n7002 2N7002-7-F
    Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original
    2n7002210maaec-q101ds11303+42n7002-13-f2n7002q-7-fmosfet 2n70022n7002-7-f PDF

    Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original
    2n7002210maaec-q101ds11303 PDF

    Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original
    2n7002210maaec-q101ds11303 PDF

    Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original
    2n7002210maaec-q101ds11303 PDF

    WPCE775

    Abstract: 215-0674034 AR8121 RT8206B AMD 215-0674034 BGA cs11002 rt8206 AMD RX780 SLG8SP628V RS740
    Contextual Info: 5 4 3 2 ZK3 BLOCK DIAGRAM DDRII-SODIMM1 PG 7,8 D DDR II 667 MHZ CLOCK GENERATOR NBGFX_CLK Griffin Processor ICS9LPRS476AKLFT NBGPP_CLK DDRII-SODIMM2 RTM880N-795 REF 14MHz PCI-E, 1X port2 LVDS HDMI LVDS(2ch) PG 19 AR8121(Giga) RX780/RS780M/RS780MC 21mm X 21mm, 528pin BGA


    Original
    200mhzics9lprs476aklftslg8sp628vtrrtm880n-795+15100mhz48mhz14mhzar8121dfhd07mr059pc155wpce775215-0674034rt8206bamd 215-0674034 bgacs11002rt8206amd rx780slg8sp628vrs740 PDF

    2N7002Q

    Abstract: equivalent of 2N7002 2N7002-13-F
    Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original
    2n7002210maaec-q101ds11303+32n7002qequivalent of 2n70022n7002-13-f PDF

    215-0674034

    Abstract: AMD 215-0674034 BGA SLG8SP628V WPCE775 RT8206B AMD RX780 AR8121 RTM880N-795 RS780M RTM880N-796
    Contextual Info: 5 4 3 2 ZK3 BLOCK DIAGRAM DDRII-SODIMM1 PG 7,8 D DDR II 667 MHZ CLOCK GENERATOR NBGFX_CLK Griffin Processor ICS9LPRS476AKLFT NBGPP_CLK DDRII-SODIMM2 RTM880N-795 PG 35 NB CORE 1.0~1.2V PG 36 REF 14MHz PG 3 (638 S1g2 socket) PG 4,5,6 CPU CORE PCIE 100MHz USB 48MHz


    Original
    200mhzics9lprs476aklftslg8sp628vtrrtm880n-795+14100mhz48mhz14mhzar8121dfhd07mr059pc155215-0674034amd 215-0674034 bgaslg8sp628vwpce775rt8206bamd rx780rs780mrtm880n-796 PDF

    2N7002 marking code 72

    Abstract: 2n7002-7-f c72 c72 sot23 2N7002 marking code 72 APPLICATION NOTES MARKING CODE C72 K72 marking diode MARKING C72 2N7002-7-F k72 diode
    Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original
    2n7002210maaec-q101ds11303+92n7002 marking code 722n7002-7-f c72c72 sot232n7002 marking code 72 application notesmarking code c72k72 marking diodemarking c722n7002-7-fk72 diode PDF