2N7002 MARKING CODE 72 Search Results

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it

2N7002 marking code 72

Abstract: 2n7002-7-f c72 c72 sot23 2N7002 marking code 72 APPLICATION NOTES MARKING CODE C72 K72 marking diode MARKING C72 2N7002-7-F k72 diode
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it

2N7002 marking code 72

Abstract: 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n (V ) rDS(on) Max (Q) V G S (th ) (V) b (A) 2N7000 5 @ V GS = 1 0V 0.8 to 3 0.2 2N7002 7,5 @ V QS= 10 V 1 to 2.5 0.115 5.5 @ V q 3 = 10 V

code for 2n7002

Abstract: 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 BS170 VQ1000P SILICONIX 2N7002
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5

2N7002 MARKING

Abstract: markings 2n7002 2n7002 siliconix s4 vishay VQ1000J/P 2N7002 marking code 72 APPLICATION NOTES VQ1000J 2n7000 2N7002 vishay SILICONIX 2N7002
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5

2N7000

Abstract: BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET • RDS ON , VGS@10V,IDS@500mA=5 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • RDS(ON), VGS@4.5V,IDS@75mA=7.5 • Advanced Trench Process Technology 0.056(1.40) • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.103(2.60) • Specially Designed for Battery Operated Systems, Solid-State Relays

S72 FET

Abstract: 2N7002 marking code 72 J Marking Code S72 S72 marking MOSFET dynamic S72 2n7002 s72 mosfet 2N7002 marking code 72 2N7002 mosfet s72
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA H C N TREENFET G TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration .016 (0.4) 0.037 (0.95) 0.037 (0.95) .045 (1.15)

Marking Code S72

Abstract: mosfet 2n7002 S72 marking DIODE 30V transistor marking s72 2N7002 MARKING s72 2N7002 MARKING transistor s72 2N7002 code s72
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET Voltage Range 60 Volts Current 230 mAmpere TO-236AB SOT-23 Features a a a a a a a 0.020(0.51) 0.015(0.37) Advanced trench process technology High density cell design for ultra-low on-resistance High input impedance

2N7002 marking code 72

Abstract: Marking Code S72 2N7002 MARKING s72 s72 mosfet S72 2n7002 2N7002 marking code 72 J
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) .016 (0.4) 0.035 (0.9) Pin Configuration 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)

equivalent of BS170

Abstract: 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P

BS170

Abstract: VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V

2n7000 equivalent

Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225

702 TRANSISTOR smd

Abstract: TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE dk 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 2N7002 PHILIPS MARKING TRANSISTOR SMD 702 G 702 transistor smd code SMD MARKING CODE TRANSISTOR 501 2N7002 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA

codes marking 2N7002

Abstract: SOT-353 MARKING G2 gs 069 LBSS8402DW1T1G 2N7002 MARKING KNP SOT-363 2N7002 BSS84 J-STD-020A SOT-353 MARKING 8v
Contextual Info: LESHAN RADIO COMPANY, LTD. NEW PRODUCT Features • · · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Also Available in Lead Free Version LBSS8402DW1T1G

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

1001XXXX

Contextual Info: W83L785TS-L/W83L785TG-L Winbond H/W Monitoring IC W83L785TS-L/TG-L W83L785TS-L Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB MAIN CONTENTS n.a. All the versions before 0.50 are for internal use. 0.5 n.a. First publication. 11/02 1.0 1.0 Change version and version on web site to

E7H diode

Abstract: 1001XXXX 212OA
Contextual Info: W83L785TS-S Winbond H/W Monitoring IC W83L785TS-S Table of Contents1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION. 1 FEATURES. 1

1111XXXX

Contextual Info: W83L785TS-L Winbond H/W Monitoring IC -I- Publication Release Date:April 18, 2005 Revision A1 W83L785TS-L Table of Contents1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION . 1

APM2512

Contextual Info: APW7120A 5V to 12V Supply Voltage, 8-PIN, Synchronous Buck PWM Controller Features General Description • The APW7120A is a fixed 300kHz frequency, voltage Operating with Single 5~12V Supply Voltage mode, synchronous PWM controller. The device drives or two Supply Voltages

APW7120A

Abstract: ZA41
Contextual Info: APW7120A 5V to 12V Supply Voltage, 8-PIN, Synchronous Buck PWM Controller Features General Description • Operating with Single 5~12V Supply Voltage or The APW7120A is a fixed 300kHz frequency, voltage mode, Two Supply Voltages and synchronous PWM controller. The device drives two

APW7120A

Abstract: APW7120 Pulse with modulator PWM circuit digram ZA41 circuit digram for dc to dc voltage converter Thermal Shut Down Functioned MOSFET 1N4148 2N7002 Apw7120 tl motherboard digram
Contextual Info: APW7120A 5V to 12V Supply Voltage, 8-PIN, Synchronous Buck PWM Controller Features General Description • The APW7120A is a fixed 300kHz frequency, voltage Operating with Single 5~12V Supply Volt- mode, and synchronous PWM controller. The device age or two Supply Voltages