2N684 Search Results

2N692

Contextual Info: SCRS Continued IT (AMPS) 16 25 @ TC (°C) 90 90 90 70 ITSM (AMPS) 200 200 160 200 (a & ä (K - » uuU CASE TO-48 TO-220 TO-3 90 f 250 £ n u U ¡J TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684.A* 2N3669 CS3-16B CS220-16B*

uc 5518

Abstract: 5518 IRFE9120
Contextual Info: 2N6845LCC4 IRFE9120 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont)

2N6847

Abstract: 2N6847 JANTXV
Contextual Info: 2N6847 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.

Contextual Info: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM *T RMS 't (AV) 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 100 200 400 600 800 1000

MOSFET

Abstract: 2N6849
Contextual Info: <£iuni- loneLuikot ZPioauott., Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N6849 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL POWER MOSFETs VDSS 'D(cont) / / -'- f \ I <« T «

50RIA120

Abstract: 16ria80 50R1A140 25RIA160 10RIA10 25RIA40 10RIA120 2n5207 25RIA 25ria120
Contextual Info: Thyristors • Phase Control Type' 48551 52 001011)7 T ■ internatio nal International re ctifie r sue d fe iR s c tjfie f T~2& ~/7 25-80 Amps RMS _ . Part Number 10RIA10 10RIA2Ô 10RIA40 10RIA60 10RIA80 10RIA100 10RIA120 2N681 2N682 2N683 2N684

Contextual Info: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

50R1A160

Abstract: 50RIA120M 50RIA80 16RIA60 50RIA20 50R1A140 50RIA120 16ria80 50RIA10 om 355
Contextual Info: Thyristors international i I ] Rectifier Phase Control Type 25-80 Am ps R M S Part Number 10RIA10 10RIA20 10RIA40 10RIA60 10RIA80 10RIA100 10RIA120 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 Vr r m Vd RM V 100 200 400 600

Contextual Info: 2N6845+JANTX Transistors P-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)100Ê I(D) Max. (A)4.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)

MOSFET

Abstract: 2N6845
Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 864(034) 9 40 (0 37) 801 (0315) 9,01 (0 355)

2N6845 JANTX

Abstract: 2N6845
Contextual Info: 2N6845 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.

2N6849 JANS

Abstract: 2n6849 jantxv 2N6849 p-channel MOSFET 100V
Contextual Info: 2N6849 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.

2N6849

Abstract: 2N6849 JANTX b 43306 2n6800 2n6849 mosfet 2n6849 jantxv
Contextual Info: Rugged Power MOSFETs File N u m b e r 2N6849 2219 Avalanche-Energy-Rated P-Channel Power MOSFETs -6.5A, and -100V ib s on = 0.30Q TERMINAL DIAGRAM D Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ited m N anosecond sw itching speeds

2N3670

Abstract: 2N3668 2N3669 2n4103 2n682 2N681 CS220-25M 2N687 2N683 2N684
Contextual Info: SCRs Continued IT (AMPS) 16 25 @ TC ( C) 90 90 90 70 90 ITSM (AMPS) 200 200 160 200 250 TO-220 TO-48 TO-220 o TO-3 50 mil CASE VRRM (VOLTS) 25 2N681,A 50 2N682,A 100 2N3668 2N683,A 150 200 2N684,A 2N3669 CS3-16B CS220-16B* 2N685,A 250 2N686,A 300 2N687,A

DD 127 D transistor

Abstract: 2N6849
Contextual Info: 2N6849 Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849 switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a low profile U surface mount package.

p12p10

Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Contextual Info: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851

2N3670

Abstract: 2N4103 2N3668 2N688A CS220-16B 2N3669 2N681 2N682 2N683 2N684
Contextual Info: SCRs Continued It (AMPS) 16 25 @ T c (°C) 90 90 90 70 90 ITSM (AMPS) 200 200 160 200 250 ( K ä & I - uUU CASE TO-3 TO-220 TO-48 f TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684,A* 2N3669 CS3-16B CS220-16B* 2N685.A* 250 2N686.A*

L1725

Abstract: 2N6849
Contextual Info: SEME 2N6849 LAB MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFETs 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) VDSS ID(cont) RDS(on) 5 .0 8 (0 .2 0 0 ) ty p . 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 4 .1 9 (0 .1 6 5 ) 4 .9 5 (0 .1 9 5 )  ! 2 .5 4 (0 .1 0 0 )

Contextual Info: 2N6845+JANTXV Transistors P-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)100Ê I(D) Max. (A)4.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)

2N6847 JANTXV

Contextual Info: 2N6847+JANTXV Transistors P-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)200Ê I(D) Max. (A)2.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)

2N6844

Abstract: 2N6846 2N6848 T30 rectifier 2N6850 T0-213AA IRFF9010 IRFF9012 IRFF9020 IRFF9022
Contextual Info: HERMETIC PACKAGE HEXFETs — INTERNATIONAL RECTIFIER SbE D • INTERNATIONAL. RECTIFIER 4ÛSS4S2 DOlOSbO 7 ■ ll&R T*-3 ^ - 0 3 ~ TO-39 Package P-CHANNEL Types IRFF9030* IRFF9032* IRFF9020“ IRFF9022* IRFF9010* IRFF9012* IRFF9131 IRFF9133 2N6848 IRFF9121

TAG676-800

Abstract: TAG675-600 TAG676-600 TAG671-600 2N5169 2N5169 Scr 2N5170 2N3658 TAG676-200 TAG675-400
Contextual Info: mu JgkJ SCR IN METAL PACKAGE TO-48D TO-66 15A RMS 12A RMS 8A RMS 2N1842A 50V 2N1843A 2N682A 2N3753 2N1844A 2N683A 2N3754 2N1845A 2N684A 2N1846A 2N685A 250V 2N1847A 2N686A 300V 2N1848A 2N687A 2N3756 TAG670-100 TAG671-100 TAG675-100 TAG676-100 150V v V 25A RMS

Contextual Info: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches P–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N684 ELECTRICAL CHARACTERISTICS (Tc = 25'C unless otherwise rioted) Characteristic Peak Forward Ulockini; Voltage (Tj. = 125°C) Peak Forward or Reverse Blocking Current