2N6661J Search Results

Contextual Info: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS

marking code vishay SILICONIX to-39

Abstract: jantx2n6661
Contextual Info: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications

Contextual Info: T em ic 2N6661JAN/JANTX/JANTXV_sm^ix N-Channel Enhancement-Mode MOS Transistors Product Summary V BR DSS M in (V) r DS(on) M ax (Q ) V GS(Ui) (V ) Id (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits • • • • • • • • • •

JANTX2N6661

Abstract: JAN2N6661 JANTXV2N6661 JANTX2N6661 reliability VNDQ09
Contextual Info: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications

TO-205AD

Contextual Info: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOS Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS

part marking information vishay HD 1

Contextual Info: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS

JANTX markings on diode

Abstract: and/JANTX markings on diode
Contextual Info: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (Ω) VGS(th) (V) ID (A) 90 4 at VGS = 10 V 0.8 to 2 0.86 TO-205AD (TO-39) BENEFITS • Guaranteed Reliability • Low Offset Voltage

jantx2n6661

Abstract: JANTX2N6661 reliability
Contextual Info: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS

JANTXV2N6661

Abstract: JANTX2N6661 JANTXV2N6661P JANTX2N6661 reliability
Contextual Info: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS

Contextual Info: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS

Contextual Info: 2N6661JAN/JANTX/JANTXV Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications

Contextual Info: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS

Contextual Info: 2N6661J AN/JANTX/J ANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) 90 fDS(on) Max ( Q ) v GS(th) ( V ) Id (A) 0 .8 to 2 0 .8 6 4 e vGS = io v FEATURES BENEFITS APPLICATIONS • • • • • • • Guaranteed Reliability

Contextual Info: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS M in (V) rDS(0n) M a * (f i) VGS<.h) (V) I d (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits • • • • • • • • • Military Qualified Low On-Resistance: 3.6 £2

VN45350T

Abstract: VN0603T 2N7001 VN45350 vn4012B
Contextual Info: H Siliconix incorporated N-CHANNEL V BR DS PART# (V) DS(ON) VGS(th) tON Ciss (V) (ns) (PF) ID (mA) PD (H) 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 30 30 10 10 10 10 10 10 38 38 35 35 16 16 35 35 0.85 0.85 0.46 0.46 0.23 0.23 0.40 0.40 2 2 2 2 2 2 2 2 3.0 3.0 2.5 2.5

2N6661-JQ

Abstract: 2N6661-JQR-B
Contextual Info: SEME 2N6661 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • Switching Regulators

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone

P-Channel Depletion-Mode

Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Contextual Info: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385

2N6661-JQ

Abstract: 2N6661-JQR-B
Contextual Info: 2N6661 MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200)