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    2N6660 Search Results

    2N6660 Datasheets (40)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N6660
    Defense Supply Center Columbus N-Channel FET Original PDF 74.83KB 17
    2N6660
    Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 0.41A TO39-3 Original PDF 463.61KB
    2N6660
    Motorola FET Transistor, N Channel Enhancment Mode TMOS Power Field Effect Transistor Original PDF 480.95KB 4
    2N6660
    Unknown N-channel, High Frequency Power Transistor Original PDF 74.84KB 17
    2N6660
    Philips Semiconductors N-Channel Vertical DMOS Transistor Original PDF 63.46KB 3
    2N6660
    Supertex Metal oxide N-channel FET, Enhancement Type Original PDF 27.62KB 2
    2N6660
    Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF 17.05KB 2
    2N6660
    Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original PDF 89.57KB 4
    2N6660
    Vishay Telefunken TRANS MOSFET N-CH 60V 1.1A 3TO-205AD Original PDF 50.81KB 4
    2N6660
    General Electric Power Transistor Data Book 1985 Scan PDF 103.39KB 2
    2N6660
    Intersil Data Book 1981 Scan PDF 92.08KB 2
    2N6660
    Motorola Switchmode Datasheet Scan PDF 41.76KB 1
    2N6660
    Motorola European Master Selection Guide 1986 Scan PDF 59.59KB 1
    2N6660
    Motorola TMOS SWITCHING FET TRANSISTORS Scan PDF 448.89KB 3
    2N6660
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 40.72KB 1
    2N6660
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.37KB 1
    2N6660
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 162.45KB 1
    2N6660
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 36.06KB 1
    2N6660
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 121.55KB 1
    2N6660
    Unknown FET Data Book Scan PDF 118.04KB 2
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    2N6660 Price and Stock

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    Microchip Technology Inc 2N6660

    MOSFETs 60V 3Ohm
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    Mouser Electronics () 2N6660 1,231
    • 1 $15.90
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    2N6660 226
    • 1 $15.90
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    Future Electronics 2N6660 Bulk 117 7 Weeks 2
    • 1 -
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    • 100 $13.76
    • 1000 $13.76
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    Onlinecomponents.com 2N6660 508
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    • 100 $40.53
    • 1000 $14.38
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    VPT Components JANTX2N6660

    MIL-PRF-19500/547
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    TTI JANTX2N6660 Waffle 1
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    New Jersey Semiconductor Products Inc 2N6660

    TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),TO-39
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    Quest Components 2N6660 1,623
    • 1 $11.60
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    • 1000 $6.09
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    Vishay Siliconix 2N6660

    TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6660 3
    • 1 $22.45
    • 10 $20.96
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    Njs 2N6660

    TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6660 1
    • 1 $20.00
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    2N6660 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N6660

    Abstract: s0437 2N6660 siliconix VQ1004J
    Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5


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    2N6660, VQ1004J/P 2N6660 VQ1004J/P S-04379-- 16-Jul-01 s0437 2N6660 siliconix VQ1004J PDF

    2N6661

    Abstract: 2N6660 2N6661 transistor 2N6659 max 1988
    Contextual Info: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.


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    2N6659 2N6660 2N6661 2N6661 T-39-05 2N6661 transistor max 1988 PDF

    2N6660 JANTX

    Contextual Info: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS


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    2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94 2N6660 JANTX PDF

    2N6660

    Contextual Info: 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    2N6660 2N6660 DSPD-3TO39N2, A070808. DSFP-2N6660 A072808 PDF

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


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    SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64 PDF

    4900 SIEMENS

    Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
    Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS


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    SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A PDF

    TN2524

    Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
    Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)


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    2N6660 2N6661 2N7000 2N7002 OT-23 2N7008 TN0104 TN0106 TN0110 VN2406 TN2524 SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110 PDF

    Contextual Info: m 2N6660 \ \ MOS N-CHANNEL TRANSISTOR DESCRIPTION: The 2N6660 is an N-Channel Enhancement-Mode MOS Transistor for General Purpose Switching Applications. MAXIMUM RATINGS A @ Tc = 25 °C 800 m A @ T c = 100 °C VDs= 60 V VGS = ±20 V 6.25 W @ 25 °C 2.5 W @ 100 °C


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    2N6660 2N6660 PDF

    2N6660

    Abstract: LE17
    Contextual Info: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS ON = 3.0Ω • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available


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    2N6660 725mW 25ent O-205AD) 2N6660 LE17 PDF

    2N6660CSM4

    Contextual Info: 2N6660CSM4 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 0.23 rad. (0.009) 3 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005)


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    2N6660CSM4 MO-041BA) 2N6660CSM4 PDF

    Contextual Info: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS


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    2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94 PDF

    Contextual Info: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS ON = 3.01 • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available


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    2N6660 40mW/ment O-205AD) PDF

    2N6660

    Abstract: 2N6661 MPF6660 2N6659 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711
    Contextual Info: 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, highspeed power switching applications such as switching power supplies, ,CMOS logic, microprocessor or ~L-to-tiigh


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    2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 2N66591MPF6659 2N6660/2N6661 MPF6660/MPF6661 O-205AD MPF6660 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711 PDF

    Contextual Info: 2N6660+JAN Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)6.25 Minimum Operating Temp (øC)


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    2N6660 PDF

    2N6660X

    Contextual Info: 2N6660X MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES • Switching Regulators 0.89 max. (0.035) • Converters


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    2N6660X 2N6660X PDF

    2N6660

    Abstract: 2N6660-1
    Contextual Info: 2N6660 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N6660 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    2N6660 2N6660 A022009 2N6660-1 PDF

    2N6660

    Contextual Info: 2N6660 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor TO-39 TO-205AD PRODUCT SUMMARY -sr V (B R )D S S (V) 60 3 >D (A) 1.1 1 SOURCE 2 GATE 3 & CASE-DRAIN n ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) SYMBOL LIMITS UNITS Drain-Source Voltage


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    2N6660 O-205AD) 9500/547A. PDF

    JANTX2N6660

    Abstract: JANTXV2N6660
    Contextual Info: 2N6660JAN/JANTX/JANTXV_ VISHAY Vishay Siliconix JAN Qualified N-Channel 60-V D-S MOSFETs PRODUCT SUM MARY V (BR)DSS M i n ( V ) r DS(on) M a x ( Q ) v G S(th) ( V ) I d (A ) 60 3 e v G S= 10 V 0.8 to 2 0.99 FEATURES BENEFITS APPLICATIO NS


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    2N6660JAN/JANTX/JANTXV_ 2N6659/2N6660, VQ1004J/P VNDQ06 S-04279-- 16-Jul-01 JANTX2N6660 JANTXV2N6660 PDF

    1004J

    Abstract: 2N6659 M 1004j
    Contextual Info: Tem ic 2N6659/2N6660, VQ1004J/P_ suimnix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber V BR DSS M in (V) rDS(on) M ax (Q) v GS(th) (V) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ V(-js = 10 V 0.8 to 2 1.1


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    2N6659/2N6660, VQ1004J/P_ 2N6659 2N6660 VQ1004J/P P-37994-- 1004J M 1004j PDF

    Contextual Info: 2N6660 2N6661 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON I d (ON) b v dgs (max) (min) TO-39 60V 3 .0 ÌÌ 1.5A 2N 6660 90V 4 .0 ÌÌ 1.5A 2N6661 Advanced DMOS Technology High Reliability Devices


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    2N6660 2N6661 PDF

    2N6660

    Abstract: 2N6661 TC5205
    Contextual Info: [FIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. 2N6660,1 1.2 AMPERES 60, 90 VOLTS RPS ON = 3.0 n


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    2N6660 2N6660 2N6661 2N6661 TC5205 PDF

    2n6660

    Contextual Info: 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    2N6660 2N6660 DSFP-2N6660 A101207 PDF

    Contextual Info: 2N6660CSM4 MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.0A RDS on 3.0 Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 3 4 1.02 ± 0.20 (0.04 ± 0.008) 2 1 1.27 ± 0.05 (0.05 ± 0.002) 0.23 rad. (0.009)


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    2N6660CSM4 MO-041BA) PDF

    2N6660

    Abstract: 2N6661
    Contextual Info: 2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 3.0Ω 1.5A 2N6660 90V 4.0Ω 1.5A 2N6661 TO-39 Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process


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    2N6660 2N6661 2N6660 2N6661 PDF