2N6385 Search Results

2N3683

Abstract: 2N6385 shockley diode 2N6383 2N6384
Contextual Info: 2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER

2n6385

Contextual Info: 2N6385 10 A N-P-N Darlington Power Transistor. 80 V. 100 W. Gain Of 1000 At 5 A. 3. Page 1 of 2 Enter Your Part # Home Part Number: 2N6385 Online Store 2N6385 Diodes 10 A N -P-N Darlington Power Transistor. 80 V. 100 W. Transistors Gain Of 1000 At 5 A. Integrated Circuits

Contextual Info: 2N6385SMD05 MECHANICAL DATA Dimensions in mm inches SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 FEATURES • High Gain Darlington Performance

2N6385

Abstract: shockley diode 2N6383 2N6384 ic4040
Contextual Info: TECHNICAL DATA 2N6383 JANTX, JTXV 2N6384 JANTX, JTXV 2N6385 JANTX, JTXV Processed per MIL-PRF-19500/523 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

f327

Abstract: TA8349 TA8348 2N6384 2N6385 shockley diode 2N6383 2N6383 RCA 2N6385 RCA GA-14
Contextual Info: 3875081 G E SOLID STATE 01 3Ö7S0Ö1 0G17243 Û Darlington Power Transistors File Number 609 2N6383, 2N6384, 2N6385 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS c {FLANGE I Features: • Operates fro m 1C w ith o u t p redriver

2N6385

Abstract: 2N6383 shockley diode 2N6384
Contextual Info: Inchange Semiconductor Product Specification 2N6383 2N6384 2N6385 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6648/6649/6650 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for low and medium frequency

2N6385

Contextual Info: 2N6385 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6385 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 15 A Vce 8O V p d is s 1OO W @ Te " 25 0C Tj -65 0C to +2OO 0C Tst g -65 0C to +2OO 0C

Contextual Info: 2N6385SMD05 MECHANICAL DATA Dimensions in mm inches SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) • High Gain Darlington Performance 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225)

SCR 2N6399

Abstract: 2N6424 2N6399 2N6407 2N63 2N6384 2N6385 2N6386 2N6387 2N6388
Contextual Info: SEMELAB LTD Type N°. 37E » Option"^ Po,ari,V Package VCEO fil33ia? QGOOOSfl 2 • S M L B ^ nJ hr e < VCE/'C PD 2N6384 2N6385 2N6386 2N6387 2N6388 SCREEN SCREEN NPN NPN NPN NPN NPN 103 T03 T0220 10220 T0220 60 80 40 60 80 10 10 8 10 10 lk-20k lk-20k lk-20k

2N6385

Abstract: 2N6383 2N6384 shockley diode
Contextual Info: SavantIC Semiconductor Product Specification 2N6383 2N6384 2N6385 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6648/6649/6650 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for low and medium frequency power application such as power switching

Contextual Info: 2N6385 m \\ SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6385 is Designed for General Purpose Am plifier and Switching Applications. PACKAGE STYLE T O - 3 I .* ” .1 35 I MAXIMUM RATINGS f? 1 .1 i $ s>:- 440 ‘ -65 °C to +200 °C Tj ‘b7S

Contextual Info: 2N6383, 2N6384, 2N6385 SbE J> • HARRIS SErHCOND SECTOR File Number 609 4302271 0G4G542 Th4 HHAS 10-Ampere N-P-N Darlington Power Transistors 7 ^ 3 3 -¿2-Ÿ 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS Features: ■ Operates from 1C without predriver

2N6385

Abstract: 2N6383 2N6384 audio amplifer shockley diode
Contextual Info: JMnic Product Specification 2N6383 2N6384 2N6385 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6648/6649/6650 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for low and medium frequency power application such as power switching

2N6127

Abstract: 2N6354 2N5007 2N6262 2N6350 2N6351 2N6352 2N6353 2N6383 2N6384
Contextual Info: - 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VcBO VCEO (sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

5005K

Abstract: 2N6575 2N6587 2N65 2N6395 2N6534 2N6583 NPN 1K 2N6385 2N6394
Contextual Info: 4flE D • Ö1331Ö7 0000444 SEMELABL 1TS ■ S M L B S E M E L A B LT3> 7^;.«/ HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Num ber Rei Code 2N6385 2N6394 2N6395 2N6408 2N6414 2N6420 2N6421 2N6422 2N6423 2N6424 2N6425 2N6436 2N6437

TO61 package

Abstract: TO111 package 2N6262 2N6226 2N6353 2N5007 2N6350 2N6351 2N6352 2N6354
Contextual Info: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

Contextual Info: 2N6383 – 2N6385 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/523 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 10 amps and is military qualified up to the JANTXV

Contextual Info: 2N6385+JAN Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.1.0k

TA8349

Abstract: 2N6383 RCA TA8348 2N6384 2N6385 RCA 2n6385 2N6384 RCA
Contextual Info: 3875081 G E SOLID ST AT E 01 1 > F | 3Ô7S0Û1 0G17243 fi File Number 609 ¿ y -*? 2N6383, 2N6384, 2N6385 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS c Features: • ■ {FLANGE I Operates from 1C w ithout predriver

Contextual Info: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

TO276AA

Abstract: SMD05 TO-276 diode of 5a 5v 10kHz
Contextual Info: 2N6385SMD05 MECHANICAL DATA Dimensions in mm inches SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 FEATURES • High Gain Darlington Performance

92CS-208S6

Abstract: 2N6384 N6385 ta8348 2N6383 RCA
Contextual Info: 2N6383, 2N6384, 2N6385 File N u m be r 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS Features: • Operates from 1C without predriver ■ Low leakage at high temperature Applications: ■ Power switching

2n6385

Contextual Info: TECHNICAL DATA 2N6383 JANTX, JTXV 2N6384 JANTX, JTXV 2N6385 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/523 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current

Contextual Info: COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued D e v ice No C ase 2N6262 2N 6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 SECTION 2 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO V o lts V C EO su s