2N632 Search Results

2n6325

Abstract: 2N6323 on 5297 transistor 2N6322 2N6324 NS2N
Contextual Info: TYPES 2N6322 THRU 2N6325 N-P-N SILICON POWER TRANSISTORS TYPES 2N6322 THRU 2N6325 BULLETIN NO. DL-S 7211589, JANUARY HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS • 100-mJ Reverse-Energy Rating • 30-A Rated Continuous Collector Current

2N6328

Abstract: Audio Amplifier 2n6328 2N6326 2N6327
Contextual Info: Inchange Semiconductor Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・Designed for audio amplifier and switching circuits applications

2N6322

Abstract: 2N6324 RBB21
Contextual Info: AUL I J j MAIL DLVKL^ LUC 12E D Jñ3btiDll D D G E D T S a 2N6322 AND 2N6324 G ru n K v ll 30 AMP NPN HIGH VOLTAGE/HIGH ENERGY 200 VOLTS 99P II 1 4 8 3 0 V a lle y V ie w A v e n u e L a M ira d a . C a lifo rn ia 9 0 6 3 8 2 1 3 9 2 1 -9 6 6 0 T '- 3 3 ~ J C '

2N6328

Abstract: 2N6326 Audio Amplifier 2n6328 2N6327
Contextual Info: SavantIC Semiconductor Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·Designed for audio amplifier and switching circuits applications

2N6322

Contextual Info: SavantIC Semiconductor Product Specification 2N6322 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current and high power capability ·Low collector saturation voltage APPLICATIONS ·For use in high current ,high power applications PINNING

2N4398

Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
Contextual Info: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC D yZ-SS-TX 26C 0 0 2 3 8 ' Sb DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050

AP1020

Abstract: 2N4398 2N4399 2N6329 2N6330 2N6331 AP1021 AP1048 AP1049 AP1050
Contextual Info: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC 26C 0 0 2 3 8 ' Sb D yZ-SS-TX DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050

Contextual Info: 2N6323 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30

Contextual Info: 2N6321 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)80 Absolute Max. Power Diss. (W)300# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)160 V(CE)sat Max. (V)3.25 @I(C) (A) (Test Condition)80

Contextual Info: 2N632 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)24ã V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)167m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.

5305da

Abstract: 5305d 2N6329 2N6330 2n6331
Contextual Info: T Y P E S 2N6329, 2N6330, 2N6331 P-N -P S IN G L E -D IF F U S E D M ES A SILICON P O W ER T R A N S IS T O R S IB H C -< FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25° C Case Temperature

2N6322

Contextual Info: Inchange Semiconductor Product Specification 2N6322 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current and high power capability ·Low collector saturation voltage APPLICATIONS ·For use in high current ,high power applications PINNING

1501-33

Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
Contextual Info: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001

2N4398

Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
Contextual Info: COLLECTOR CURRENT = 30 AMPS PNP TYPES Device No Case 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050 AP1063 AP1071 AP1095 AP1096 AP1113 TO -3 TO-3 TO-3 TO -3 TO-3 TO-3 TO-63 TO-63 TO-3 T O -63 TO-63 TO-3 TO-63 TO-3 TO 61/1 TO-63 TO-3

Contextual Info: 2N6322 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)300 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30

Contextual Info: 2N6327 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)30 Absolute Max. Power Diss. (W)114# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30

2N6331

Abstract: 2N6330 2N6326 2N6327 2N6328 2N6329 2n6328 texas instruments transistor 2N 3792 PC15A LW 2411
Contextual Info: T Y P E S 2 N 6 3 2 9 , 2N6330, 2N6331 P - N - P S I N G L E - D I F F U S E D M E S A S IL IC O N P O W E R T R A N S I S T O R S FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25°C Case Temperature

23741

Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
Contextual Info: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967

2N6322

Abstract: 2N6324
Contextual Info: AULIJj i I A I L D L V K L ^ INC • 'Ï IS i | a 3 t t o i i ise 2N6322 AND 2N6324 30 AMP NPN HIGH VOLTAGE/HIGH ENERGY 200 VOLTS T H E C O L L E C T O R 18 IN E L E C T R IC A L C O N T A C T W ITH T H E C A SE A L L J E D E C TO-63 DIM EN SIO N S r “

2N6127

Abstract: 2N6328 TEXAS INSTRUMENTS 2N6328 1N914 2N6326 2N6327 TRI15 526529
Contextual Info: T\ yPES 2MS32S. 2N6327, 2N6328 N-P-H SILICON POWER TRANSISTORS P A R A M E T E R M E A S U R E M E N T IN FO R M A T IO N V O LTAG E W AVEFO RM S T E S T C IR C U IT NOTES. A B. V ge The is a —3 0 v o u is e V 3er, w a v e t o r m du tv c v c Dm 0 V in t o a 5 0 - i l t e r m i n a t i o n .

"PNP Transistor"

Abstract: 2N6329
Contextual Info: PNP Transistor D ivisio n Law rence M il- S p e c none S h ip p in g (none) Package 2N6329 (#23928) O u a l D ata (none) Absolute M axim um Ratings Symbol Max P o w e r D issipatio n Pow er 200 W 30 A 60 V 60 V 5 V C o lle c to r C u rre n t *c B r e a k d o w n V o l t a g e C o lle c to r-to -B a s e

Contextual Info: 2N6325 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30

2N6320

Contextual Info: 2N6320 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)80 Absolute Max. Power Diss. (W)300# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)3.25 @I(C) (A) (Test Condition)80

Contextual Info: 2N6326 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)114# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30