2N6055 TRANSISTOR Search Results

2N6055

Contextual Info: 2N6055 Darlington complementary silicon power transistor 15.26 Transistors Darlington . Page 1 of 1 Enter Your Part # Home Part Number: 2N6055 Online Store 2N6055 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics

2N6055 MOTOROLA

Abstract: Darlington Silicon Power Transistor 10 amp npn darlington power transistors 2N6055 100 amp npn darlington power transistors 2N6056 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR power transistors 03 transistor
Contextual Info: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications.

2N6055

Abstract: 2N6056 2N6054 2N6053
Contextual Info: SavantIC Semiconductor Product Specification 2N6055 2N6056 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low

BD139

Abstract: BU108 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY

2N6055

Abstract: 2N6056 2N6053 2N6054
Contextual Info: Inchange Semiconductor Product Specification 2N6055 2N6056 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low

N6055

Abstract: RCA-2N6055 SUS CIRCUIT 2N6055 2N6056 darlington npn rca TYPES OF TRANSISTORS TEKTRONIX TRANSISTORS
Contextual Info: 3875081 G E SOLID STATE~Öl Dlf| 3375001 0017534 7 ^ $ 3Darlington Power ? _ 2N6055, 2N6056 File Number 8-Ampere Silicon N-P-N Darlington Power Transistors 60- and 80-Volt, 100-Watt Types

2N6220

Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
Contextual Info: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079

2N6053

Abstract: 2N6055 2N6054 2N6056
Contextual Info: ¿2&M0SPEC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP 2N6053 2 N6054 General-purpose power amplifier and low frequency switching applications NPN 2N6055 2N6056 FEATURES: * Low Collector-Emitter Saturation Voltage VCE SAT =2.0V(Max.)@lc=4.0A =3.0V(Max.)@lc=8.0A

2n6053

Contextual Info: ductoi ^Pioducii, Unc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6053/2N6055 COMPLEMENTARY POWER DARLINGTON The 2N6053 Is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and

2N6055 MOTOROLA

Abstract: 2N6055 2N6055 transistor 2N6056
Contextual Info: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N 60 55 2 N6056* D arlington C om plem entary Silicon Pow er Transistors ‘ Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications.

2N6055 transistor

Abstract: 2N6055 2N6053 NPN Darlington transistor Darlington
Contextual Info: 2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications.

2N6055

Abstract: 2N6053 2N6054 2N6056 2N6055 transistor 2N6052
Contextual Info: Data Sheet Central Semiconductor Corp. 2N6053 2N6054 PNP 2N6055 2N6056 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of W orld Class Discrete Semiconductors

2N6055

Abstract: 2N6053
Contextual Info: COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055

Contextual Info: HARRIS SEIUCOND SECTOR SbE D • M3DE271 □ D 4 0 im 2N6055, 2N6056 Tb3 H H A S File Number 563 8-Ampere Silicon N-P-N Darlington Power Transistors 60- and 80-Volt, 100-Watt Types With Gain of 750 at 4 Amperes TERMINAL DESIGNATIONS Features: ■ Operation from 1C without predriver

2N6096

Abstract: 2N6055 2N6055 MOTOROLA N6056 2N6056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6055 2 N6056* Darlington Com plem entary Silicon Power Transistors "Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. • • • • DARLINGTON 8 AMPERE

2N6301 MOTOROLA

Abstract: TP5AT 2N6053 MOTOROLA 2N6053 2N6054 2N6298 2n6299 motorola 2N6301 2N6299 2N6055
Contextual Info: ““~y-q.j iDARLINGTOV COMPLEMENTARY SILICON POWER TRANSISTORS 7 yy’,“Q ‘yvJ /^ . 1 ;‘,/I” . designed for generalbpurpose amplifier and low-speed switching applications. l High DC Current Gain hFE=3OOO Typi@lC=4.0Adc . Collector-Emitter Sustaining Voltage - @ 100 mA

2N6055

Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s

Contextual Info: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)

MC7805CK

Abstract: MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck
Contextual Info: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510

2n5882

Contextual Info: Power Transistors TO-3 Case TYPE NO. »C *>D evceo lc hFE B VC ÊO v CE SAT ® lc TYP (Â) PNP NPN 2N3055 MJ2955 1 2N3442 <W) MAX 00 (V) TYP (A) 00 (A) (MHZ) MIN MIN MM MAX 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . MAX MIN

SE9300

Abstract: 2N3715 FAIRCHILD 2N4909 2N6383 2N5878 2N6053 2N6054 2N6055 2N6056 2N6103
Contextual Info: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING VcEO Item DEVICE NO. Polarity NPN | PNP v CEO hFE V Max Min/Max @ic A v CE(sat) V Max @ ic A *T MHz Min(Typ) PO(Max) W TC=25°C (Cont'd) Package No. •c = 8.0 A Max Continuous (Cont’d)

2N3442

Abstract: 2N5875 NPN Transistor 2N3055 darlington 2N3055 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790
Contextual Info: Pow er Transistors TO-3 Case TYPE NO. •c Pd BVc b O b v C e o @ Ic hFE VCE SAT @ <c *TYP (A) NPN 2N3055 PNP MJ2955 2N3442 (W) MAX 15 115 (A) (V) (V) MIN MIN MIN 100 60 5.0 — 00 (A) 10 (MHZ) MIN MAX MAX fT *TYP 3.0 10 2.5 . 10 117 160 140 20 70 3.0 5.0

MJ2955

Abstract: 2N3442 2N3055 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

Contextual Info: Power Transistors TO-3 Case TYPE NO. •c Pd BVc b O hFE bvceo @lc VCE SAT O <c *TYP (W) (A) NPN PNP MAX (A) (V) (V) MIN MIN MIN MAX (V) (A) MAX *T *TYP (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3789 10 150 80 60