2N6027 GATE CURRENT 20 Search Results

2N6027

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N6027 SCR PROGRAMMABLE UNIJUNCTION TRANSISTOR  DESCRIPTION The UTC 2N6027 is a programmable unijunction transistor, it uses UTC’s advanced technology to provide customers with low forward voltage, low gate to anode leakage current, low offset voltage and

2N6027

Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n6028 "Programmable Unijunction Transistor" 2N6028 CIRCUIT 2n5270 2N6027 CIRCUIT Programmable Unijunction Transistor 2N6028 Application Note
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse

2n6027

Abstract: equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027 pin diagram 2N6028 Application Note 2N6028 unijunction application note 2N6027 PBFREE
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting

2N6027 MOTOROLA

Abstract: 2N6027 2N6028 MOTOROLA 2N6028 Q375 2N6028 CIRCUIT 2n6027 circuit
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6027 2N6028 Programmable Unijunction Transistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to "program” unijunction characteristics such as R b b . ri, ly, and ip by merely selecting two resistor values. Application includes

2N6027 MOTOROLA

Abstract: 2N6028 MOTOROLA 2N6027 2n5270 2N6028 PUT 2N6027 PUT 2N6028 2N6027 CIRCUIT 2N6027-D 2n6027 PUT
Contextual Info: MOTOROLA Order this document by 2N6027/D SEMICONDUCTOR TECHNICAL DATA 2N6027 2N6028 Programmable Unijunction Transistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to “program” unijunction characteristics such as

equivalent transistor of 2n6027

Abstract: 2N6027 2n6028 PUT 2N6027 transistor put 2n6028 PUT Oscillator 2n6027 unijunction 2N5270 2N6027RL1 2N6028RLRA
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse

2n6027

Abstract: PUT 2N6027 pin diagram PUT 2N6027 2N6027G equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027/2N6028 2n5270 2N6028 unijunction application note
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting

2N6028 Application Note

Abstract: 2N6027 PUT 2N6027 pin diagram equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram 2N6028 2N6028 CIRCUIT PUT 2N6027 unijunction application note 2N6027-2N6028
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting

2N6027

Abstract: equivalent transistor of 2n6027 2N6028 PUT 2N6027 2N6028 CIRCUIT 2N6027 CIRCUIT 2n5270 transistor 2N6028 PUT Oscillator 2n6027 PUT 2N6028
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse

GE 2N6027

Abstract: 2N6028 MOTOROLA 2N6027 ge 6028F
Contextual Info: 2N6027 2N6028 P ro gram m ab le Unijunction T ran sisto rs Silicon Program m able Unijunction Transistors . . . d e s ig n e d to e n a b le the e n g in e e r to " p r o g r a m " u niju nction ch a racteristics su c h a s R g g , 7j, ly, a n d Ip b y m e re ly sele ctin g tw o re sisto r va lu es. A p p lic a tio n in clu d e s

2N6027

Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two

2N6027

Abstract: 2N6028 2N6028 Application Note unijunction application note 2n6027 gate current 20
Contextual Info: 2N6027 2N6028 Program m able Unijunction Transistors Silicon Programmable Unijunction Transistors PUTs 40 VOLTS 300 mW . designed to enable the engineer to "p ro g ra m " unijunction characteristics such as Rbb- V> !V' and Ip bY merely selecting two resistor values. Application includes

2N6028

Abstract: 2N6027 MOTOROLA 2n6027
Contextual Info: 2N6027 2N6028 Programmable Unijunction Transistors Silico n Program m able Unijunction T ran sisto rs P U Ts 40 V O L TS 300 m W . . . d e sig n e d to enable the e n g ineer to "p ro g ra m " unijunction ch aracteristics such as R b B ’ V i IV ’ ar|d Ip by m e re ly selecting tw o re sisto r va lu e s. A p p licatio n includ es

Contextual Info: DIGITRON SEMICONDUCTORS 2N6027-2N6028 PROGRAMMABLE UNIJUNCTION TRANSISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

transistor 123 DL

Abstract: equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT
Contextual Info: "Öl G E SOLID STATE DE I 3fl7SDfll OOlflOlô t. 01E 18018 3875081 G E SOLID STATE D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: • Planar Passivated Structure • Low Leakage Current

ujt trigger circuit

Abstract: ujt 2N6027 equivalent transistor of 2n6027 GE 2N6027 2N6028 transistor put 2n6028 UJT TIMERS AND OSCILLATORS equivalent transistor UM 66 SCR TRIGGER PULSE transistor 2N6028
Contextual Info: "Öl G E SOLID STATE 3875081 G E SOLID STATE DE'] 3fl7SDfll 0D1Ö01Ö t. 01E 18018 D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: Applications: • Planar Passivated Structure

2n6028

Abstract: 2n6027 ha1818 motorola programmable unijunction 2n6027 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6027 2N6028 Programmable Unijunction TVansistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to “program1’ unijunction characteristics such as r BB. fl. IV. ar|d 'P by merely selecting two resistor values. Application includes

SCR CONTROL BY PUT CIRCUIT

Abstract: ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1
Contextual Info: 2N58110-6017 SERIES SEE GES5810-6017 Silicon Programmable Unijunction Transistor D13T SERIES 2N6027.8 PUT The General Electric PUT is a three-terminal planar passivated PNPN device in the standard plastic low cost TO-98 package. The terminals are designated as anode, anode gate and cathode.

2N2646

Abstract: unijunction transistor transistor put 2n6028 2n2646-47-low 2N6028 Unijunction D13K1 Programmable Unijunction Transistor PUT 2N6028 SCR 2N2646
Contextual Info: UNIJUNCTIONS COMPLEMENTARY— D5K SERIES The D5K offers the ultimate in unijunction stability and uniformity. Low frequency oscillators and timers can be built using the D5K with better than 1.0% accuracy over extended temperature ranges. The D5K has characteristics like

2n2646 equivalent

Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

programmable unijunction transistor

Abstract: 1N4148 2N6027 energy discharge capacitor
Contextual Info: HV91 Series Application Note AN-H23 Avoiding Turn-on Oscillations in HV91 Family PWM ICs To discharge the delay capacitor, many schemes can be used. Two of the simplest are to use a diode from shutdown to VDD though this can be disrupted by very short drops in power or to

2n6027 PUT

Abstract: AN-H23 Programmable Unijunction Transistor unijunction application note 2N602 "Programmable Unijunction Transistor" 2N6027 1N4148 PUT 2N6027 2N*027
Contextual Info: AN-H23 Application Note Avoiding Turn-on Oscillations in the HV91 Family of PWM ICs Introduction Since there is no hysteresis in the undervoltage shutdown in the Supertex HV91 series of converters, there may be situations where insufficient power is provided to the VDD

2N6027

Abstract: 2n6027 PUT equivalent transistor of 2n6027 PUT 2N6027 "Programmable Unijunction Transistor" programmable unijunction transistor
Contextual Info: 2N6027 Silicon programmable unijunction transistor PUT′s in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings (TA = 25°C) Symbol VAK VGKF VGKR VGAR IT ITRM PT Parameter, units Limits ± 40 40 -5

Contextual Info: Dlac €3 DO-35 Case TYPE NO. CT-32 v BO 00 A VßO 00 BO <JiA |4 V t| 00 •P (A) Mm MAX MAX MAX MIN MAX 28 36 3.0 50 5.0 2.0 Programmable u jts (p u t ) TO-92 TYPE NO. GATE TO ANODE REVERSE VOLTAGE VGAR DC ANODE GATE TO ANODE CURRENT LEAKAGE CURRENT •t