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    2N5486 TRANSISTOR Search Results

    2N5486 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    2N5486 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5436

    Abstract: 2N5485 2N5485 MICRO ELECTRONICS 2N5434 2N5484 2N5486 2N5484 MICRO ELECTRONICS
    Contextual Info: 2N5484 2N5485 2N5486 2N5434, 2N5485 and 2N5486 are N-Channel Junction Pfasttc T O -9 2 Field Effect designed Transistors. for oscillators VHF / UHF and They are amplifiers, analog mainly mixers, switches. Bottom View Source & O ta in interchengeebie ABSOLUTE MAXIMUM RATINGS


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    2N5485

    Abstract: 2N5486 2N5484 Field Effect Transistor MRC137 MRC138 power electronic handbook transistors handbook 2n5484 equivalent MRC136
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N5484; 2N5485; 2N5486 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel field-effect transistors FEATURES


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    2n54842n54852n5486field effect transistor+6mrc137mrc138power electronic handbooktransistors handbook2n5484 equivalentmrc136 PDF

    2N5486 equivalent

    Abstract: 2n5484 equivalent 2N5485 2N5484 2N5486 MRC135
    Contextual Info: Philips Semiconductors Product specification N-channel field-effect transistors 2N5484; 2N5485; 2N5486 QUICK REFERENCE DATA FEATURES • Low noise SYMBOL • Interchangeability of drain and source connections V ds drain-source voltage • High gain. bss drain current


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    2N5486

    Contextual Info: bL>53^31 00241E5 S31 H A P X Philips Sem iconductors N-channel field-effect transistors 2N5484; 2N5485; 2N5486 N AMER PHILIPS/DISCRETE L.7E ]> QUICK REFERENCE DATA FEATURES SYMBOL • Low noise • Interchangeability of drain and source connections • High gain.


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    2N5486

    Abstract: 2N5486 Transistor 2N5485 SMP5485 2N5484 SMP5484 SMP5486
    Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-22 B-22 01/99 2N5484, 2N5485, 2N5486 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF/UHF Amplifiers Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Power Dissipation


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    OF TRANSISTOR 2N5485

    Abstract: 2N5486 Transistor 2N5485 DATASHEET OF TRANSISTOR 2N5485 2N5484 2N5486
    Contextual Info: Datasheet 2N5484 THRU 2N5486 Central Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 N CHANNEL JUNCTION F IE L D EFFECT TRANSISTOR JEDEC TO-92 CASE Manufacturers of World Class Discrete Semiconductors


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    Contextual Info: B 22 9 -9 7 2N5484, 2N5485, 2N5486 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR • VHF/UHF AMPLIFIERS Absolute maximum ratings at T* » 25°C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Power Dissipation Power Derating


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    2N5484

    Abstract: 2N5486 MOTOROLA 2N5486 equivalent 2N5486 2N5484 MOTOROLA
    Contextual Info: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current


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    2n5484/d2n54842n5486226aa+32n5486 motorola2n5486 equivalent2n5484 motorola PDF

    2N5486

    Abstract: 2N5484 2N5485 CBVK741B019 MMBF5484 MMBF5485 MMBF5486
    Contextual Info: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching


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    2n5484mmbf5484mmbf5485mmbf5486+42n54852n5486ot-23cbvk741b019 PDF

    TO-226-AE

    Abstract: BC108 characteristic JFET BF245 BC237
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C


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    5485 transistor

    Abstract: DATASHEET OF TRANSISTOR 2N5485 MMBF5484 OF TRANSISTOR 2N5485 2N5485 equivalent 2N5484 2N5485 2N5486 CBVK741B019 MMBF5485
    Contextual Info: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching


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    2n5486

    Abstract: 2N5485 2n5484 2N5484 characteristics 2n5484 jfet transconductance 2N5485 MMBF5484
    Contextual Info: National Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 TO-9 2 T l/ G / 1 0 1 0 0 -6 T L/G / 1 0 1 0 0 -2 N-Channel JFET Transistors for RF Amplifiers Electrical Characteristics T a = 25"C unless otherwise noted Symbol Parameter Min Max Unit*


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    2n5484 equivalent

    Abstract: 2n5485 equivalent 2N5486 equivalent 2N5484 2N5486 2N5485 2N5484 characteristics URC158 2N5485 DATA 2n5485 equivalent transistor
    Contextual Info: b b 5 3 ci31 0024125 Philips Semiconductors Ö31 N-channel field-effect transistors IAPX 2N5484; 2N5485; 2N5486 N AMER P H I L I P S / D I S C R E T E L.7E T> Q UICK REFERENCE DATA FEATURES SYMBOL • Low noise • Interchangeability of drain and source connections


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    BFJ 49

    Contextual Info: 2N5484 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA M A XIM U M RATINGS Rating Drain-Gate V oltage Reverse G a te-Source V oltage Drain Current Forw ard Gate Current Total Device D issip atio n (a T c = 25°C Derate a b o v e 25°C Operating and S to ra g e Ju nction


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    2N5484

    Abstract: 2N5485
    Contextual Info: 2N5484 thru 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA M A X IM U M R A T IN G S Rating Symbol Value Unit Vd G 25 Vdc vgsr 25 Vdc 'o 30 m Adc 'G if) 10 m Adc Pd 350 2.8 mW m W ;C TJ. Tslg - 6 5 to +150 ’C Drain-Gate Voltage Reverse Gate-Source Voltage


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    2n5484

    Abstract: 2n5486 2n5484 equivalent 2n5484 jfet 2N5486 equivalent
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers 2N 5484 2 N5486 N-Channel — Depletion M AXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ T q = 25 C Derate above 25°C


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    2N5486 MOTOROLA

    Abstract: LMI24 2N5484 2N5484-2N5486 2N5484 MOTOROLA 2N5486 S229 2n5484 equivalent S119 S219
    Contextual Info: MOTOROLA SEMICONDUCTOR — — TECHNICAL Order this document by 2N54841D DATA JFET VHF/UHF Amplifiers — Depletion N-Channel 1 DRAIN 3 GATE “6 I 2 SOURCE MHIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate–Source Voltage Drain Current Forward Gate Current


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    2N5486 equivalent

    Abstract: 2H5484
    Contextual Info: 2N 5484 2 N5486 ELECTRICAL CHARACTERISTICS continued {7a = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Input Capacitance (V d s - 15 Vdc, Vq s « 0, f « 1.0 MHz) Characteristic C(ss - - 5.0 PF Reverse Transfer Capacitance {Vq s * 15 Vdc, VGS = 0, f ~ 1.0 MHz)


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    2n5484 equivalent

    Abstract: 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent
    Contextual Info: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VH F/UHF A m plifiers N-Channel — Depletion 2N 5484 2N 5486 1 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Reverse G ate-S ource Voltage Drain Current Symbol Value Unit Vd G


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    2N5457 equivalent

    Abstract: JFET 2N5457 2N5486 MOTOROLA 2c003 2N5486 equivalent 2n5484 equivalent 2NS457 2N5460 transistor jfet 2N5457 2N5461
    Contextual Info: 2N5457* CA SE 29-04, STYLE 5 TO-92 TO-226AA 1 Drain M A X IM U M RA TIN G S Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Sym bol Value Unit Vd s 25 Vdc V DG 25 Vdc Vdc 2 Source V G SR -2 5 Gate Current IG 10 mAdc Total Device Dissipation @ Ta = 25°C


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    7.1 Channel audio amplifier

    Abstract: amplifier audio BFT46 BF861A n channel audio BFW12 BF410C BF512 transistors BFW10
    Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR AMPLIFIERS OVERVIEW_PRODUCT DATA: PAGES 36-37 N/P _ leaded_


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    BF991

    Abstract: BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174
    Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Index Types added to the range since the last issue of Handbook SC07 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 2N5484 80 BF909R 165 J174 288 2N5485


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    mfe2001

    Abstract: 2N5245 MPF112 2N3824 MPF256 2n5247 FET 2N4416 2N3823 MOTOROLA 2N5670 MFE2000
    Contextual Info: MOTOROLA SC O I O D E S / O P T O J 34 DF|b3t.7ESS 0030030 5 | 6 3 0 7 2 5 5 M O T O R O L A SC <D I O D E S / O P T O 34C 38038 r-iT-ir FIELD-EFFECT TRANSISTORS DICE continued) 2C4416 die no. LINE SOURCE — DFM146 This die provides performance equal to or better than that of


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    2n3819 field-effect transistors

    Abstract: MPF102 MMBF-5457 bf245b
    Contextual Info: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457


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