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    2N5401 SOT 23 Search Results

    2N5401 SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ36V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, SOT-23 Datasheet
    MUZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-323 Datasheet
    MKZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, SOT-23 Datasheet
    MSZ36V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, SOT-346 Datasheet
    MKZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, SOT-23 Datasheet

    2N5401 SOT 23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5401 fairchild

    Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 SOT-23 E B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*


    Original     		2N5401 MMBT5401 2N5401 OT-23 2N5401 fairchild PDF

    2N5401

    Abstract: CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103
    Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 2N5401 OT-23 CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103 PDF

    2N5401 SOT-23

    Abstract: sot-23 marking LC MMBT5401 041 sot-23 2N5401 BT5401
    Contextual Info: II CO 2N5401 / MMBT5401 I V IIL J PNP GENERAL PURPOSE AMPLIFIER INCORPORATED Features • • • High C ollector-Em itter Breakdown Voltage Epitaxial Planar Die Construction Available in both Thru-H ole and Surface M ount Packages 2N5401 MMBT5401 TO-92 SOT-23


    OCR Scan     		2N5401 BT5401 2N5401 OT-23 MIL-STD-202, MMBT5401 OT-23 -250/JA OT-23) 2N5401 SOT-23 sot-23 marking LC 041 sot-23 BT5401 PDF

    2N5401 fairchild

    Abstract: 2N5401 SOT-23
    Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*


    Original     		2N5401 MMBT5401 2N5401 OT-23 OT-23 2N5401 fairchild 2N5401 SOT-23 PDF

    2N5401 SOT-23

    Abstract: 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401
    Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 2N5401 OT-23 2N5401 SOT-23 2N5401 fairchild transistor 2N5401 MMBT5401 PDF

    2n5401y

    Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM
    Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 2N5401 OT-23 2N5401YBU 2N5401RM 2N5401CH1TA 2n5401y 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 5401 GM PDF

    mark 2L SOT-23

    Abstract: MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 2N5401BU 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6
    Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 2N5401 OT-23 2N5401RA 2N5401BU 2N5401RM 2N5401TF mark 2L SOT-23 MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6 PDF

    mark 2L SOT-23

    Abstract: 2N5401 SOT-23 2N5401 CBVK741B019 F63TNR MMBT5401 PN2222N 2n5401 transistor MJE 350 PNP power transistor
    Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 2N5401 OT-23 mark 2L SOT-23 2N5401 SOT-23 CBVK741B019 F63TNR MMBT5401 PN2222N 2n5401 transistor MJE 350 PNP power transistor PDF

    sot23 t04

    Abstract: mark t04 sot 2n5401 sot 23
    Contextual Info: 2N5401 I MMBT5401 D iscrete POW ER & S ig n a l Technologies tß National Semiconductor" 2N5401 MMBT5401 SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.


    OCR Scan     		2N5401 MMBT5401 2N5401 OT-23 bS01130 00407Cn LSD113D sot23 t04 mark t04 sot 2n5401 sot 23 PDF

    2N5401 SOT-23

    Abstract: mark 2L SOT-23 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401
    Contextual Info: 2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 OT-23 2N5401 2N5401 SOT-23 mark 2L SOT-23 2N5401 fairchild transistor 2N5401 MMBT5401 PDF

    2N5401 SOT-23

    Abstract: mark 2L SOT-23 mark 641 mark 641 sot dc transistor 2N5401 2N5401 MMBT5401
    Contextual Info: 2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 OT-23 2N5401 2N5401 SOT-23 mark 2L SOT-23 mark 641 mark 641 sot dc transistor 2N5401 MMBT5401 PDF

    2148F

    Abstract: transistor 2N5401 2N5401 MMBT5401 2N5401 SOT-23
    Contextual Info: N 2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 OT-23 2N5401 2148F transistor 2N5401 MMBT5401 2N5401 SOT-23 PDF

    2N5401 fairchild

    Contextual Info: t JffS fe B Discrete POWER & Signal Technologies < : il S e ^ M IQ D N O Ü C T O R 2N5401 MMBT5401 SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose am plifier and switch for applications requiring high voltages. Sourced from Process 74.


    OCR Scan     		2N5401 MMBT5401 2N5401 OT-23 2N5401 fairchild PDF

    transistor equivalent book 2N5401

    Abstract: 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage Rating VCEO 120 150 Vdc Collector – Base Voltage


    Original     		2N5400 2N5401* 2N5401 226AA) Resist218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor equivalent book 2N5401 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551 PDF

    transistor 5BM

    Abstract: BC237
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 2 CASE 318 – 08, STYLE 9 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current


    Original     		MMBD6100LT1 236AB) DEVICE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor 5BM BC237 PDF

    IR3575

    Abstract: BC237
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 CASE 318 – 08, STYLE 12 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit VR 35 75 Vdc IF 100 mAdc


    Original     		MMBD2835LT1 MMBD2836LT1 MMBD2836LT1 236AB) MAR218A MSC1621T1 MSC2404 MSD1819A MV1620 IR3575 BC237 PDF

    BC237

    Abstract: 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,


    Original     		BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet PDF

    BC237

    Abstract: jedec package TO-226AA
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage


    Original     		BAV99LT1 236AB) J218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 jedec package TO-226AA PDF

    BC237

    Abstract: BF245 marking code M2 SOT23 BC547 collector characteristic curve 2n3053 replacement
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers BFR30LT1 BFR31LT1 N–Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate – Source Voltage


    Original     		BFR30LT1 BFR31LT1 236AB) BFR30LT1 CHAR218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 BF245 marking code M2 SOT23 BC547 collector characteristic curve 2n3053 replacement PDF

    BC237

    Abstract: BC857A MARKING CODE diode sod123 W1
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,


    Original     		BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 BC857A MARKING CODE diode sod123 W1 PDF

    pm2222a

    Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
    Contextual Info: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT


    OCR Scan     		BA582 OD123 BA482 BA682 BA683 BA483 BAL74 BAW62, 1N4148 pm2222a SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS PDF

    BC237

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original     		MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 PDF

    BC237

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


    Original     		MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 PDF

    BC237

    Abstract: MPSA06 346
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


    Original     		MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346 PDF