2N5177 Search Results

2N5177

Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5177 Silicon NPN high power UHF transistor 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:

Contextual Info: 2N5177 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)55 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.150

2N5177

Abstract: N10W TI 511 transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5177 Silicon NPN high power UHF transistor 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:

2N5177

Contextual Info: SGI Silicon Group Inc. 2N5177 Silicon NPN high power UHF transistor 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . ^Output power: 20 watt (typ) 100 - 500 MHz Frequency range:

PT8828

Abstract: sot123 package KT922G 2SC1239 SGSF324 motorola 2n4932 BLY93A S0122 J03020 2SC2094
Contextual Info: RF POWER SILICON NPN Item Part Number Number I C 5 10 >= 2.5 A, 2SC1398 2S01802 2N4226 2SC2078 2SC1909 2SC3294 2S01724 2S01815 2N3928 2N3929 ~~g~i~4 15 20 S01222-5 2N5642 2SC1306 2SC1306 SK3529 2SC585 2SC636 BLX13 ~t~~~~ 25 30 BlY93A J03020 BlX13C BlW83 BlY93C

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,