2N5058 Search Results

Contextual Info: 2N5058 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

Contextual Info: 2N5058 MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) NPN EPITAXIAL PLANAR BIPOLAR TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.41 (0.016)

2N5058

Contextual Info: 2N5058 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

2N5058

Contextual Info: 2N5058 Si NPN Power BJT 21.23 Transistors Transistors Bipolar Si NP. 1 of 1 Home Part Number: 2N5058 Online Store 2N5058 Diodes Si NPN Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

Contextual Info: o o o 1C fT hFE @ 1C Device Type Min Amps Case PD @ TC MHz Watts °C JEDEC 0.15 300 2N5058 35 0.03 30 1 25 TO-5 0.5 300 2N3742 20 0.03 30 1 25 TO-5 TO-5 30 0.25 25 25 25 30 0.025 35 4 25 TO-5 600* 2N5011 30 0.025 35 4 25 TO-5 700* 2N5012 30 0.025 35 800* 2N5013

2N5058

Abstract: 2N5059 2N3724 2N3724 MOTOROLA
Contextual Info: MOTOROLA SC 1EE 0 | b3b7S54 00ab43G 0 | XSTRS/R F 2N5058 2N50S9 M A X IM U M RATINGS Symbol 2N5058 2N5059 Unit VcEO 300 250 Vdc Collector-Base Voltage VCBO 300 250 Vdc Emitter-Base Voltage V ebo 7.0 Rating Collector-Emitter Voltage 6.0 CASE 79-04, STYLE 1

2N5058

Abstract: 2N5059 2n5058-2n5059
Contextual Info: Datasheet Central 2N5058 2N5059 sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5058, 2N5059 types are NPN Silicon Epitaxial Planar Transistors designed for

2n5059

Abstract: 2n5058
Contextual Info: TYPES 2N5058, 2N5059 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D I S 7 3 9 6 9 9 , M A R C H 1 9 6 7 - R E V IS E D M A R C H 1973 HIGH-VOLTAGE 10-WATT TRANSISTORS FOR GENERAL PURPOSE AMPLIFIER APPLICATIONS IN LINE-OPERATED CIRCUITS • Solid-State Relays

Contextual Info: 2N5058 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

Contextual Info: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5

BFW45

Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
Contextual Info: High Voltage Transistors TYPE NO. 101 POLA­ RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39

2N5189

Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP *TYP *TYP *TYP MAX *ICEO *ICES *ICEV

2n4249

Abstract: 2N4965 se7055 2N4250 2N244 2N4248 SE706 2N2443 2n4250 TO-106 2n3742
Contextual Info: TR A N SISTO RS—SMALL SIGNAL PNP LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VC EO PLASTIC PACKAGE TYPE VOLTS hpE MIN M IN -M A X NF hpE hFE v CEO h FE *C @ •c MIN - MAX mA mA dB @ MAX NF f dB kHz MAX f @ PACKAGE kHz MPS6523 25 150 @0.10

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N5189

Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109
Contextual Info: Small signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION @ l c VCE VCE(SA T ) ® ' C (m A) (m A) (V) (V) h :E VCBO v CEO v EBO •CBO ® VCBO (V) (V) (V) (V) (M ) NF Cob <PF) •on (ns) *off (ns) (dB) *TYP *TYP TYP TYP TYP MAX MIN MIN MIN 200

2N9308

Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

PWM 3845

Abstract: 12 volt zener diode on pspice MICROCAP 2N3904 TRANSISTOR using darlington amplifier transformer winding formula 220v Ac to 12v Dc 220VAC to 5V 1A DC flyback converter 220VAC single phase AC inverter design 220VAC single phase AC inverter
Contextual Info: BACK Secondary Side, Off-Line Battery Charger Controllers ADP3810/ADP3811 a FEATURES Programmable Charge Current High Precision Battery Voltage Limit Precision 2.000 V Reference Low Voltage Drop Current Sense: 300 mV Full Scale Full Operation in Shorted and Open Battery Conditions

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.