2N4403 CHIP Search Results

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

2N2222 MPS2222

Abstract: 2N2222 MPS2222 npn transistor ZTX312 ZTX313
Contextual Info: TABLE 4 : PNP SWITCHING Max V CE satl Min h FE Max 'c V mA M PS2907A 60 600 BCY77P 60 100 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY65EP BCY79P 45 200 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY59P 2N4403 40 600 0.4 150 15 100 300 150 200 20 35 255 150 2N4401

2N4403

Abstract: 2N5366 CP593 2n4403 chip
Contextual Info: PROCESS CP593 Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 X 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 X 4.3 MILS Emitter Bonding Pad Area 3.5 X 4.5 MILS Top Side Metalization

2N4403

Abstract: 2N5366 CP593 2n4403 chip
Contextual Info: PROCESS CP593 Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

transistor 2n4403 equivalent

Abstract: 2n4403 chip PNP 2N4403 transistor Transistor switch 2N4403 2N5366 CP593
Contextual Info: PROCESS CP593 Small Signal Transistors PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

Contextual Info: ÇA407 SUPERHETERODYNE FM RECEIVER BACK-END FM receiver back-end of the CA404/CA407 FM receiver chip set. Can drive both centertapped eg: speaker and non-centertapped loads Low voltage (1.1 volt) operation for single battery cell applications Low power consumption

"FM receiver"

Contextual Info: • S5E » NEWBRIDGE MICROSYSTEMS = = = = = = bSfifilGl QGOOfi'i? 4 ■ = = = ^ T - V - G S - W CA407 SUPERHETERODYNE FM RECEIVER BACK-END FM receiver back-end of the CA404/CA407 FM receiver chip set. Can drive both centertapped eg: speaker and non-centertapped loads

2N2222 MPS2222

Abstract: 2N2222 MPS2222 npn transistor ZTX313 ZTX312 2N2222 BCy71 NPN switching transistor 2N4403 2N4400 2N4401 2N4402
Contextual Info: TABLE 3 : NPN SWITCHING Max V CE sat Type Max V CEO at 'c Min h FE at fT at Max. Switching Times at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns Ic mA 10 BCY77P 10 BCY79P V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 V BCY59P

"FM receiver"

Abstract: Newbridge Microsystems audio frequency discriminator Newbridge 2N4403 MD500 fm receiver
Contextual Info: S5E D NEWBRIDGE MICROSYSTEMS = = = = • = = bSfifilGl GGOOfi'i? 4 ■ = = = ^ T-V-GS-W CA407 SUPERHETERODYNE FM RECEIVER BACK-END FM receiver back-end of the CA404/CA407 FM receiver chip set. Can drive both centertapped eg: speaker and non-centertapped loads

2N9014

Abstract: ,TONE DIALER TNR680K 1N4148 TID "tone dialer" tone Dialer HP3582A
Contextual Info: W91810/A TONE DIALER WITH REDIAL GENERAL DESCRIPTION The W91810/A is a monolithic integrated circuit. It contains Redial memories which c a n per­ form LAST Number Dialing functions. It is fab ricated in CMOS technology thus has good perfor­ m a n ce in low voltage, low power operations.

2N2222 MPS2222

Abstract: 2N3906 NPN switching transistor 2N4403 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P
Contextual Info: TABLE 3 : NPN SWITCHING Max V CE sat Min fT hFE V CEO Max 'c V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 Type at Max. Switching Times at V at at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns BCY59P 45 200 0.35 10 0.25 120 630

2N2221-2N2222

Contextual Info: S EM IC O N D U C TO R DICE NPN SWITCHING TRANSISTORS Volts Volts 2N2218A 2N2219A 2N2221A 2N2222A 2N3904 2N2218 2N2219 2N2221 2N2222 2N2369 2N2369A ZTX314 ZTX313 ZTX312 ZTX 311 ZTX310 toFF h FE 75 75 75 75 60 60 60 60 60 40 40 40 40 30 20 25 40 40 40 40 40

Contextual Info: SbE » • ^70370 □ G 0 7 0 4 cî 1D1 H Z E T B SEMICONDUCTOR DICE <- m - NPN SWITCHING TRANSISTORS Volts Volts 2N2218A 2N2219A 2N2221A 2N2222A 2N3904 2N2218 2N2219 2N2221 2N2222 2N2369 2N2369A ZTX314 ZTX313 ZTX312 ZTX311 ZTX310 l ON hFE at l OFF Min. Min. Max. Max.

A2 zener diode

Abstract: diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 DIODE 827 ZENER 1N5242 1N414* zener 2n2222 transistor pin b c e ZENER 1n5232
Contextual Info: DISCRETE SEMICONDUCTORS I N D E X A N D C R O S S REFERENCE Industry Number Type Allegro Number s Allegro Package TO-236AB TO-236AB TO-236AB 1N914 Diode TMPD914 1N4148 1N5230 1N5231 1N5232 Diode Zener Zener Zener TMPD4148 TMPZ5230 TMPZ5231 TMPZ5232 1N5234

TRANSISTOR BC337 SMD

Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
Contextual Info: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices

12v dc soft start motor control diagram

Abstract: 12v soft start DC motor control diagram 3 phase 2 speed soft start motor control diagram Charge 2n4401 2n4403 12v DC MOTOR SPEED CONtrol ic 3 phase soft start motor control diagram soft start motor control diagram bldc sensorless 12v brushless motor driver IR2118 dc motor 9v
Contextual Info: www.fairchildsemi.com ML4435 Sensorless BLDC Motor Controller Features Motor starting is accomplished by commutating the motor at a low frequency to produce low speed motion. The low speed motion is used to generate a Back EMF signal. A back EMF sampling circuit locks on to the motors position and controls

2N2102

Abstract: 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89 2N2905A complement
Contextual Info: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed sw itching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

2N2222 hfe

Abstract: 2N2222 chip ztx313 BCY71 2N2218 2N2219 2N2221 2N2222 2N2904 2N2906
Contextual Info: NPN SWITCHING M ax VCE sat| at Max Type V CEO Continued f T Min at h FE at P acksQ S 'c •c •b Min Max •c ton 'c . mA MHz mA ns mA mA 0.35 150 15 40 150 50 150 15 40 0.4 150 15 100 800 0.4 150 15 40 120 30 800 0.4 150 15 100 ZT80 25 500 0 .2 10 2 38 ZT87

Contextual Info: W91440 SERIES IO-MEMORY TONE/PULSE SWITCHABLE DIALER WITH SAVE FUNCTION GENERAL DESCRIPTION The W91440 series a re monolithic integrated circuit. It contains 10 memories which ca n perform Tone/Pulse sw itchable d ialing functions. It is fab ricated in CMOS technology thus has good

LED IR for Tx, RX

Abstract: DAN-102 ST16C650A ST16C580 ST16C654 XR16C850 XR16C854 XR16C864 LED IR Tx RX infrared receiver led 2 pin
Contextual Info: DATA COMMUNICATIONS APPLICATION NOTE DAN-102 May 1999 Infrared Application with ST16C580, ST16C650A or XR16C850 UART Description This application note describes the application of using the infrared encoder and decoder Endec inside the Exar ST16C580, ST16C650A or XR16C850 UART for wireless data communications.

2N2219 transistor

Abstract: BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A 2N4036 BFX29
Contextual Info: PNP SWITCHING TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

SW-DIP-8

Abstract: SW-DIP-2 IC 7407 mach210-20jc SW-DIP2 MCU17 U15C 13la6 LM317T HDR103
Contextual Info: NOTES, M68EML05P6A EMULATION MODULE UNLESS OTHERWISE SPECIFIED 1. VCC PIN LOCATIONS : VCC IS APPLIED TO PIN 8 OF ALL 8-PIN IC’s, PIN 14 OF ALL 14-PIN IC’s, PIN 16 OF ALL 16-PIN IC’s, PIN 20 OF ALL 20-PIN IC’s, ETC. 2. GROUND PIN LOCATIONS : GROUND IS APPLIED TO PIN 4 OF ALL 8-PIN IC’s,

LM64P70

Abstract: LM64C031 lq10d011 LQ323Y11 laptop power on sequence circuit diagram relay 5 V LQ9D011 LM64P80 V by one sharp TFT Sharp LQ10
Contextual Info: Liquid Crystal Displays LCD Application Note POWER-ON SEQUENCING FOR LIQUID CRYSTAL DISPLAYS; WHY, WHEN, AND HOW ABSTRACT Liquid Crystal Displays require special considerations upon power-up. The following explains why power-up sequencing is necessary, the required timing of the power-up sequence, and circuitry necessary

relay 5 V

Abstract: laptop power on sequence circuit diagram lq10d011 LM64P70 LM64C031 LM64P80 LQ323Y11 LQ9D011 65530 GD6340
Contextual Info: Liquid Crystal Displays LCD Application Note POWER-ON SEQUENCING FOR LIQUID CRYSTAL DISPLAYS; WHY, WHEN, AND HOW Charles Guthrie, Sharp Electronics Corporation, San Jose, Ca. ABSTRACT Liquid Crystal Displays require special considerations upon power-up. The following explains why