2N4393
Abstract: n channel 2n4393
Contextual Info: 2N4393 MECHANICAL DATA Dimensions in mm inches JFET SWITCHING N CHANNEL- DEPLETION 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • LOW ON RESISTANCE • FAST SWITCHING
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2n4393
Contextual Info: SILICON SMALL SIGNAL N-CHANNEL JFET 2N4393 • High Speed Switching. • Low On Resistance. • Designed For High Reliability and Space Applications. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS VGS VGD IG PD Drain – Source Voltage Gate – Source Voltage
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Contextual Info: SILICON SMALL SIGNAL N-CHANNEL JFET 2N4393 • High Speed Switching. • Low On Resistance. • Designed For High Reliability and Space Applications. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS VGS VGD IG PD Drain – Source Voltage Gate – Source Voltage
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2n4391
Abstract: 2N4393 2N4392 transistor 2N4393
Contextual Info: Datasheet 2N4391 2N4392 2IM4393 Central Semiconductor Corp. SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE M anufacturers of W orld C lass Discrete S em iconductors
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2n43912n43922im43932n4393+1transistor 2n4393
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2N3824
Abstract: 2N6660Q 2N6660CSM4-JQR-B TO276AB 2N4393CSMJ
Contextual Info: Search Results Part number search for devices beginning "2N3824" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N3824 N-Channel TO72 50V - 0.3W -
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2n38242n3824lp2n3824-to462n3824-to72+72n66602n6660csm42n6660csm4-jqr-b2n6660-jqr-b2n6660qto276ab2n4393csmj
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2N4393
Abstract: n channel 2n4393
Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s
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Contextual Info: 2N4393CSM SMALL SIGNAL N–CHANNEL J–FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.31 rad. (0.012)
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f32 TRANSISTOR
Abstract: transistor J112 2SK113
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-32 F-32 01/99 NJ132 Process Silicon Junction Field-Effect Transistor ¥ High Speed Switch ¥ Low-Noise Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts
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nj1322n43912n43922n4393+82n48562n48572n48582n48592n4860f32 transistortransistor j1122sk113
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2N4393
Abstract: 2N4393CSM 6493
Contextual Info: 2N4393CSM SMALL SIGNAL N–CHANNEL J–FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.31 rad. (0.012)
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2N4393DCSM
Contextual Info: SEME 2N4393DCSM LAB SMALL SIGNAL DUAL N–CHANNEL J–FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 3 2 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005)
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2N3810 LCC
Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Contextual Info: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
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fm36235m/0103/cecc/uk1360/mvqc-03-003050+13vqc-03-003049u31582m8s022n3810 lcc2n2222a lcc1escc 5202-001mca3201/2bescc 5204/002bul54ahmp2835escc 5201-002silicon carbide jfet2n918 die
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MCA0616/1
Abstract: T-120-01B Skynet Electronic
Contextual Info: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology
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mil-prf-19500qr216qr217fm36235+9m/0103/cecc/uk1360/mvqc-03-003050vqc-03-003049u31582m8s02mca0616/1t-120-01bskynet electronic
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ua 471 instrumentation amplifier
Abstract: transistor c1009 Linear Technology Magazine Circuit Collection LTspice LTSP lt1078
Contextual Info: LT1078/LT1079 Micropower, Dual and Quad, Single Supply, Precision Op Amps DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Available in 8-Pin SO Package 50µA Max Supply Current per Amplifier 70µV Max Offset Voltage 180µA Max Offset Voltage in 8-Pin SO
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lt1078/lt1079lt107914-pinlt1078+10lt1078ac1154c1009c1021p1276ua 471 instrumentation amplifiertransistor c1009linear technology magazine circuit collectionltspiceltsp
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pmi op07
Abstract: IC TTL 741 OP AMP PMI OP AMP pmi op42 op44 OPERATIONAL AMPLIFIERS PMI 2N4393 small signal amplifier JFET itt 2n4118 MAT-04
Contextual Info: ^A N A LO G DEVICES AN-108 APPLICATION NOTE ► ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 JFET-lnput Amps Are Unrivaled for Speed and Accuracy by Peter Henry JFET-input amplifiers provide an economical means of achiev
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an-108op-07pmi op07ic ttl 741 op amp+8pmi op amppmi op42op44operational amplifiers pmi2n4393small signal amplifier jfetitt 2n4118mat-04
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc
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pico 32195
Abstract: self oscillating royer design tektronix 454a LP5010-334MLB Royer resonant LT3401 Self Oscillating Flyback Converters emi photomultiplier Royer converter Royer oscillator
Contextual Info: Application Note 118 March 2008 High Voltage, Low Noise, DC/DC Converters A Kilovolt with 100 Microvolts of Noise Jim Williams This publication describes a variety of circuits featuring outputs from 200V to 1000V with output noise below 100 V measured in a 100MHz bandwidth. Special techniques
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100mhzan118faan118-47an118-48+10pico 32195self oscillating royer designtektronix 454alp5010-334mlbroyer resonantlt3401self oscillating flyback convertersemi photomultiplierroyer converterroyer oscillator
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ta143
Abstract: Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 an47fa AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic
Contextual Info: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.
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gltan47an47-129an47-130an47-131+11an47-132an47fata143ferronics 21-110jan47-127an47an-4745an47-48an47-93tektronix p6056teledyne philbrick logarithmic
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ta66
Abstract: uA733 an47fa Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592
Contextual Info: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.
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ltan47an47-129an47-130an47-131+11an47-132an47fata66ua733ferronics 21-110j2n2369 avalanchelt1150tektronix p6056linear technology an47an-4745ne592
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tcxo philips 4322
Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The
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tcxo philips 4322philips tcxo 4322 190iso9001-certified philipsbfq32 philips bare die datasheet+62sk170blon4749philips bfg196s8740230toshiba fet databook2sk162 hitachi
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Sony Semiconductor Replacement Handbook 1991
Abstract: 2sc5088 horizontal transistors tcxo philips 4322 20000w audio amplifier circuit diagram replacement for 2sc5088 horizontal transistors motorola power fet rf databook 2SK170BL Funkamateur transistor 1060 schematic diagram tv sony
Contextual Info: Philips RF Manual product & design manual for RF small signal discretes 3 edition July 2003 rd / discretes/documentation/rf_manual Document number: 4322 252 06384 Date of release: July 2003 3rd edition
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sony semiconductor replacement handbook 19912sc5088 horizontal transistorstcxo philips 432220000w audio amplifier circuit diagram+6replacement for 2sc5088 horizontal transistorsmotorola power fet rf databook2sk170blfunkamateurtransistor 1060schematic diagram tv sony
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20000w audio amplifier circuit diagram
Abstract: Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767
Contextual Info: 2nd edition RF Manual product & design manual for RF small signal discretes product & design manual for RF small signal discretes 2nd edition October 2002 Page: 1 2nd edition RF Manual product & design manual for RF small signal discretes Content 1. 2. 3.
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bb202bga658920000w audio amplifier circuit diagramsony semiconductor replacement handbook 1991+820000w audio amplifier pcbirf power mosfets catalogirf transistor substitutionphilips rf manual2sk170bl2sk163funkamateurtea5767
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schematic diagram inverter 12v to 24v 1000w
Abstract: car power amp circuit diagrams 1000w schematic diagram 48V solar charge controller 48V DC to 12v dc 40 amp converter circuit diagram 1000W Amplifier 1000w schematic diagrams solar charger schematic 24V 12v 1000W car AUDIO AMPLIFIER CIRCUIT DIAGRAM 800w class d circuit diagram schematics amplifier circuit diagram class D 1000w 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Contextual Info: LINEAR TECHNOLOGY DECEMBER 2009 IN THIS ISSUE… COVER ARTICLE 1.2A Buck Converters Draw Only 2.8µA When Regulating Zero Load, Accept 38VIN or 55VIN.1 John Gardner Linear in the News.2 DESIGN FEATURES
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38vin55vinse-1641-800-4-linear+10schematic diagram inverter 12v to 24v 1000wcar power amp circuit diagrams 1000wschematic diagram 48v solar charge controller48v dc to 12v dc 40 amp converter circuit diagram 1000wamplifier 1000w schematic diagramssolar charger schematic 24v12v 1000w car audio amplifier circuit diagram800w class d circuit diagram schematicsamplifier circuit diagram class d 1000w12v 1000w audio amplifier circuit diagram
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1n6227silecgg 841n623+62g300chn 543ic hxj 20381n52398in52401n48 zener diode
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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