2N4351 MOTOROLA
Abstract: mosfet equivalent mosfet 2n4351 2N4351
Contextual Info: M O T O RO LA SC XSTRS/R F 1HE D | b3b?a51 GOflkbSS 4 | 2N4351 CASE 20-03, STYLE 2 TO-72 TO-206AF Drain MAXIMUM RATINGS Symbol Value Unît Drain-Source Voltage Vos 25 Vdc Draln-Gate Voltage Vd G 30 Vdc Gate-Source Voltage* Rating \ fj n Gate \ 4 J Cas«
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2n4351o-206af2n4351 motorolamosfet equivalent+1mosfet 2n4351
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2N4351 equivalent
Abstract: 2N4351 mosfet equivalent mosfet 2n4351 Digitron 2N4351 complementary BO42
Contextual Info: D IG ^ R M ^ ELEC T R O N IC • gps COR 42E D ■ Bfl42L,0? OODCJOEO 5 1 1 ■ DGE/ - J / ' - ì r 1 9 9 1 HIGHWAY 2 8 W E S T BOUND BROO K, N E W J E R S E Y 0 8 8 0 5 k r 2N4351 TO-72 i»w ifc*S <t y u ? MN t 1 « jauPirc 0«tl OftAIN lUISflAtC «NO CASEUAO
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2fl42l2n4351cdfsubl102n4351 equivalent+5mosfet equivalentmosfet 2n4351digitron2n4351 complementarybo42
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AN211A
Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
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an211a/dan211ampf102 jfetmpf102 equivalent transistor+7mpf102 transistormpf102 jfet data sheet2n37972n3797 equivalentmpf102 fetmpf102 equivalent p channel2n4221 motorola
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MPF102 equivalent transistor
Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
Contextual Info: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or
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an211a/dr14525mpf102 equivalent transistormpf102 jfet+8an211a2n3797mpf102 fet2n4351mpf102 transistor2n3797 equivalentmpf102 application notep-channel depletion mode fet
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ultra low igss pA
Abstract: ultra low igss pA mosfet n channel
Contextual Info: LS5301, PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301 HIGH INPUT INPEDANCE HIGH GAIN IG = 0.100 pA gfs = 70 µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated
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ls5301pf5301lf53012n5301+3300mwultra low igss paultra low igss pa mosfet n channel
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MPF102 JFET
Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory
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an211a/dan211ampf102 jfetmotorola an211a+82n3797mpf102 transistor2n4221 motorola power transistor2n4221 motorolajfet with yosmpf102 circuit application2n4351 motorolaigfet
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2N3797
Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
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an211a/dan211a2n3797mpf102 equivalent transistor+8mpf102 jfetmpf102 fet2n3797 equivalent2n4221 motorolampf102 transistormpf102 application notep-channel depletion mode fetjfet transistor replacement guide
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TO72 package n-channel jfet
Abstract: 2N5019 "direct replacement" 2n4416 transistor spice SST4500 Ultra High Input Impedance N-Channel JFET Amplifier J201 Replacement 2n4416 transistor die n-channel JFET sot23-6 JFET power transistor 2n3956 equivalent transistor
Contextual Info: 2N/SST4416 2N4416A N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER Linear Integrated Systems FEATURES Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOW NOISE FIGURE 400 MHz 4 dB (max) EXCEPTIONAL GAIN (400 MHz) 10 dB (min) 1 2N SERIES ABSOLUTE MAXIMUM RATINGS
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2n/sst44162n4416als4416ls4416a+132n4416300mwot-23to72 package n-channel jfet2n5019 "direct replacement2n4416 transistor spicesst4500ultra high input impedance n-channel jfet amplifierj201 replacement2n4416 transistor dien-channel jfet sot23-6jfet power transistor2n3956 equivalent transistor
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P-Channel MOSFET 12V SOT 23
Abstract: LS-31 ultra FAST DMOS FET Switches jfet to 92
Contextual Info: J/SST111 SERIES SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated J SERIES SST SERIES TO-92
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j/sst111360mw350mwot-23+4p-channel mosfet 12v sot 23ls-31ultra fast dmos fet switchesjfet to 92
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low noise dual P-Channel JFET
Abstract: transistor TO99 package 2N5116 LS312 equivalent 2N4416 equivalent p-channel dual P-Channel JFET 2n5114 sot23
Contextual Info: 2N5114 SERIES SINGLE P-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE 75Ω LOW CAPACITANCE 6pF TO-18 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature
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2n5114-50ma500mwlow noise dual p-channel jfet+6transistor to99 package2n5116ls312 equivalent2n4416 equivalent p-channeldual p-channel jfet2n5114 sot23
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2sk170 spice
Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
Contextual Info: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170
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lsk170lsk389400mw-500pa+122sk170ot-232sk170 spicej310 replacementreplacement 2sk170j201 replacementlsk170a2sk170 fetfet j310ultra high input impedance n-channel jfet amplifierultra low noise fetdiode a6
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ultra low igss pA mosfet
Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
Contextual Info: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL
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100pa360mwultra low igss pa mosfetultra low igss pa+8j174transistor and diode equivalent listultra high input impedance n-channel jfet amplifiersd2103n164 equivalentsst113ultra low noise n-channel jfet2n3958 equivalent
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ultra low igss pA mosfet
Abstract: J506 equivalent jfet n channel ultra low noise "N-Channel JFET" "Dual PNP Transistor" transistor j201 Dual N-Channel JFET super beta transistor jpad100 ultra low noise transistor
Contextual Info: LS846 LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en = 3nV/√Hz LOW GATE LEAKAGE IG = 15pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to +150 °C
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ls846ls843350mwultra low igss pa mosfet+9j506 equivalentjfet n channel ultra low noisen-channel jfetdual pnp transistortransistor j201dual n-channel jfetsuper beta transistorjpad100ultra low noise transistor
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"DUAL N-Channel JFET"
Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71
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lsk389400mw2sk389dual n-channel jfet+82n4117a equivalent2sk389 equivalentu405jfet u404 spicelsk389b2n4119a equivalent3n165 equivalentlsk389a
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FET U310
Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
Contextual Info: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW
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u/j/sst308350mw500mwot-23+9fet u310u310 fetmosfet 2n4351low noise low frequency jfetj174ls312 equivalentn-channel low noise amplifierj177 equivalent transistor10ma jfet
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jfet transistor 2n4391
Abstract: ls n channel jfet J506 equivalent transistor j109 equivalent Siliconix "low noise jfet" A1 sot23 n-channel J201 N-channel JFET jfet to 92 depletion n-channel mosfet to-92 J201 Replacement
Contextual Info: J/SST108 SERIES LOW NOISE SINGLE Linear Integrated Systems N-CHANNEL JFET SWITCH FEATURES Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS on ≤ 8Ω FAST SWITCHING tON ≤ 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)
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j/sst108350mwot-23jfet transistor 2n4391+9ls n channel jfetj506 equivalenttransistor j109 equivalentsiliconix "low noise jfeta1 sot23 n-channelj201 n-channel jfetjfet to 92depletion n-channel mosfet to-92j201 replacement
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4392 mosfet
Abstract: MOSfet 4392 dual P-Channel JFET sot23 P-Channel MOSFET 2N jfet to 92 SST113 j174 EQUIVALENT transistor U402
Contextual Info: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS on ≤ 30Ω FAST SWITCHING tON ≤ 15ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)
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2n/pn/sst43911800mw350mw4392 mosfet+7mosfet 4392dual p-channel jfet sot23p-channel mosfet 2njfet to 92sst113j174 equivalenttransistor u402
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J201 Replacement
Abstract: "DUAL N-Channel JFET" 2n4416 transistor die fairchild Dual N-Channel JFET n-channel JFET sot23-6 2n3956 equivalent transistor G1 TRANSISTOR SOT 23 PNP Siliconix "low noise jfet" J507 Replacement LS5912C
Contextual Info: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS
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ls5911ls5912ls5912c2n5911+132n591210khz100mhz500mwot-23j201 replacementdual n-channel jfet2n4416 transistor die fairchildn-channel jfet sot23-62n3956 equivalent transistorg1 transistor sot 23 pnpsiliconix "low noise jfetj507 replacement
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050lmmbd914lbas16lbal99l+16mbav70lmbav99lmbav74bd2835xlmbd2836xlmmbd2837xlmmbf112lmfe521mmbf1122n3797 equivalentmfe131 equivalentmps5210bc557 sot238c448bc459cmfe211
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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e420 dual jfetac digital voltmeter using 7107mps5010bf320+6jfet bf245 bf246 j201 2n3819mc6821icl7117 voltmetercookbook for ic 555hall marking code a04e304 fet
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md918 Transistor
Abstract: germanium MM2264 2N3050 MC369G
Contextual Info: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro
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mc1550gmd918 transistorgermaniummm2264+22n3050mc369g
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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je1100mfc8040mfc8030mc1316+6triac 9707schematic of mc1466transistor mje 5332je 3055 motorolamcr407-2mc1466
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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sem 5027atransistor bd 540 lysmc710g131-80 wj 89+6mc707g2n328ln4005 diode reverse current and voltagemc708gc844pts36a
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