2N4124 TRANSISTOR Search Results

2N4123

Abstract: 2N4123RLRM 2N4124 2N4124G
Contextual Info: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage Value VCEO 2N4123 2N4124 Collector−Base Voltage Vdc 30 25 VCBO 2N4123

2N4124 MOTOROLA

Abstract: 2N4123 MOTOROLA 2N4124 2N4123
Contextual Info: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

2N4123

Abstract: 2N4124 2N4123 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

SOT23 MARK Y3

Contextual Info: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*

2n3904 2n3906

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64

2N4124

Contextual Info: TOSHIBA TRANSISTOR 2N4124 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICBO*50nA(Max.) lEBO“50nA(Max.) @ Vcb =20V (3 Ve B“3V . Low Saturation Voltage : vCE(sat)=0.3V(Max.)

TO226AA

Contextual Info: 2N4124 Small Signal Transistor NPN TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • Especially suitable for AF-driver and low-power output stages.

Contextual Info: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Vceo = 2N4123: 30V 2N4124: 25V • C ollector Dissipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :2N 4123

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N4126 TRANSISTOR PNP 1. EMITTER FEATURES z PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. z As Complementary Type, The NPN Transistor 2N4124 is

Contextual Info: 2N4124 Small Signal Transistors NPN TO-92 _ FEATURES ♦ NPN Silicon Epitaxial Transistor for switching and amplifier applications. ♦ Especially suitable for AF-driver and low-power output stages. ♦ As complementary type, the PNP transistor 2N4126 is recommended.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N4124 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z High Transition Frequency 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2N4126

Abstract: 2N4124
Contextual Info: 2N4126 -0.2 A, -25 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. Complementary of the 2N4124

Contextual Info: TOSHIBA 2N4124 Transistor Unit in m m Silicon NPN Epitaxial Type & 1UAX. For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICB0 = 5 0 nA Max. @ VCB = 20V - IEB0 = 50nA (Max.) @ VEB = 3V • Low Saturation Voltage

Contextual Info: 45E D • ^0^7230 0017754 1 IT0S4 TOSHIBA TRANSISTOR 2N4124 SILICON NPN EPITAXIAL TYPE PCT PROCESS TO SHI BA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICB0= 50nA(Max.) lEBO=50nA(Max.)

Contextual Info: 2N4124 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • For General Purpose Switching and Amplifier Applications Especially Suitable for AF Driver and Low Power Output Stages E A TO-92 B Mechanical Data • • • • Case: TO-92, Plastic

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N 4123 2N 4124 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage v CBO 40 30 Vdc Emitter-Base Voltage

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bb53R31 ODBfllSE A IAPX 2N 4123 2N4124 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for low-power, small-signal audio­ frequency applications for consumer service. P-N-P complements are 2N4125 and 2N4126.

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

Contextual Info: MCC Micro Commercial Components TM Features NPN Silicon General zThrough Hole TO-92 Package zCapable of 625mWatts of Power Dissipation zCase Material: Molded Plastic. UL Flammability • 2N4123 2N4124
  omponents 20736 Marilla Street Chatsworth

2N5219

Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E sa t E b v CEO Device T yp e @ 1 0 m A -(V ) Min. M ax. @ l c (m A ) V c e (V ) NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N4124 2N4125 2N4126 2N4400

2N4123

Abstract: 2n4124
Contextual Info: MCC 2N4123 2N4124
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Silicon General l Through Hole TO-92 Package l Capable of 625mWatts of Power Dissipatio Purpose Transistor 625mW

2N4123

Abstract: 2n4123 transistor
Contextual Info: MCC 2N4123 2N4124
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features NPN Silicon General l Through Hole TO-92 Package l Capable of 625mWatts of Power Dissipatio Purpose Transistor 625mW

Contextual Info: MCC 2N4123 2N4124
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • NPN Silicon General Halogen free available upon request by adding suffix "-HF"

Contextual Info: MCC 2N4123 2N4124
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features NPN Silicon General zThrough Hole TO-92 Package zCapable of 625mWatts of Power Dissipation