2N4124 TRANSISTOR Search Results
2N4124 TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
2N4124 TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage 2N4123 2N4124 Collector−Base Voltage 2N4123 2N4124 Emitter−Base Voltage |
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2N4123, 2N4124 2N4123 2N4123/D | |
2N4124G
Abstract: 2N4123 2N4123RLRM 2N4124
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2N4123, 2N4124 2N4123 2N4123/D 2N4124G 2N4123 2N4123RLRM 2N4124 | |
2N4124
Abstract: 2N4123 2N4124G 2N4123RLRM
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2N4123, 2N4124 2N4123 2N4124 2N4123 2N4124G 2N4123RLRM | |
2N4124
Abstract: 2n4123 2n4123 npn transistor
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2N4123 2N4124 2N4124 2N4125 2N4126. O-92A 310mW 2n4123 npn transistor | |
2N4123
Abstract: 2N4123RLRM 2N4124 2N4124G
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2N4123, 2N4124 2N4123 2N4123/D 2N4123 2N4123RLRM 2N4124 2N4124G | |
2N4123
Abstract: 2N4124 2N4123RLRM 2N4123RLRMG 2N4124G
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2N4123, 2N4124 2N4123 2N4123/D 2N4123 2N4124 2N4123RLRM 2N4123RLRMG 2N4124G | |
2N3904
Abstract: 2N4124
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2N4124 2N4124: 625mW 2N3904 100MHz 2N4124 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage VCBO 40 |
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2N4123 2N4124 2N4124 226AA) | |
2n4124
Abstract: 2N4123 MOTOROLA 2N4123
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2N4123 2N4124 2N4124 2N4123 MOTOROLA | |
2N4124 MOTOROLA
Abstract: 2N4123 MOTOROLA 2N4124 2N4123
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2N4123/D 2N4123 2N4124 2N4123 226AA) 2N4123/D* 2N4124 MOTOROLA 2N4123 MOTOROLA 2N4124 | |
2N4123
Abstract: 2N4124 2N4123 MOTOROLA
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2N4123/D 2N4123 2N4124 2N4123 226AA) 2N4123/D* 2N4124 2N4123 MOTOROLA | |
2n4123Contextual Info: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage |
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2N4123/D 2N4123 2N4124 2N4124 226AA) 2N4123/D* | |
SOT23 MARK Y3Contextual Info: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* |
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2N4124 MMBT4124 2N4124 OT-23 2N4124BU 2N4124TA 2N4124TF 2N4124RA SOT23 MARK Y3 | |
2N4123
Abstract: 2N4124 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4125 2N4126 2n4123 pnp
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2N4123 2N4124 2N4124 2N4125 2N4126. O-92A 2N4123 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4126 2n4123 pnp | |
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1N916
Abstract: 2N4124 CBVK741B019 F63TNR MMBT4124 PN2222N
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2N4124 MMBT4124 2N4124 OT-23 1N916 CBVK741B019 F63TNR MMBT4124 PN2222N | |
transistor
Abstract: transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP
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2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 BC327 BC328 BC337 BC338 transistor transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP | |
MAR 745 TRANSISTOR
Abstract: TRANSISTOR 2N4124 BP317 2N4124 2N4126 2N4124 philips mar 709
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M3D186 2N4124 2N4126. MAM279 SCA53 117047/00/02/pp8 MAR 745 TRANSISTOR TRANSISTOR 2N4124 BP317 2N4124 2N4126 2N4124 philips mar 709 | |
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor 2N4124 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 25 V). 1 APPLICATIONS DESCRIPTION collector 2 base 3 emitter • General purpose switching and amplification, |
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2N4124 2N4126. | |
2N4123
Abstract: 2N4124 2N4126 2N4125 2n4123 npn transistor
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2N4123 2N4124 2N4125 2N4126. O-92A 2N4123) 2N4126 2n4123 npn transistor | |
2n3904 2n3906
Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
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2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2n3904 2n3906 2SC1815 2SA1015 2SC1815 2SA1015 | |
2N4123
Abstract: 2n4124 2n4123 npn transistor
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2N4123/4124 2N4123 2N4124 625mW 2N3904 2n4123 npn transistor | |
2N4124 transistor
Abstract: IC102
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2N4124 2N4126 D-74025 18-Aug-04 2N4124 transistor IC102 | |
2N4124Contextual Info: TOSHIBA TRANSISTOR 2N4124 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICBO*50nA(Max.) lEBO“50nA(Max.) @ Vcb =20V (3 Ve B“3V . Low Saturation Voltage : vCE(sat)=0.3V(Max.) |
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2N4124 2N4126 100MHz 2N4124 | |
TO226AAContextual Info: 2N4124 Small Signal Transistor NPN TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • Especially suitable for AF-driver and low-power output stages. |
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2N4124 O-226AA 2N4126 TO226AA |