2N4124 TRANSISTOR Search Results
2N4124 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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2N4124 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage 2N4123 2N4124 Collector−Base Voltage 2N4123 2N4124 Emitter−Base Voltage |
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2n41232n41242n4123/d | |
2N4124G
Abstract: 2N4123 2N4123RLRM 2N4124
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2n41232n41242n4123/d2n4124g+1 | |
2N4124
Abstract: 2N4123 2N4124G 2N4123RLRM
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2n41232n41242n4124g2n4123rlrm | |
2N4124
Abstract: 2n4123 2n4123 npn transistor
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2n41232n41242n41252n4126+3 | |
2N4123
Abstract: 2N4123RLRM 2N4124 2N4124G
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2n41232n41242n4123/d2n4123rlrm+1 | |
2N4123
Abstract: 2N4124 2N4123RLRM 2N4123RLRMG 2N4124G
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2n41232n41242n4123/d2n4123rlrm+2 | |
2N3904
Abstract: 2N4124
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2n4124625mw2n3904100mhz | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage VCBO 40 |
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2n41232n4124226aa | |
2n4124
Abstract: 2N4123 MOTOROLA 2N4123
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2n41232n41242n4123 motorola | |
2N4124 MOTOROLA
Abstract: 2N4123 MOTOROLA 2N4124 2N4123
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2n4123/d2n41232n4124226aa+2 | |
2N4123
Abstract: 2N4124 2N4123 MOTOROLA
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2n4123/d2n41232n4124226aa+1 | |
2n4123Contextual Info: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage |
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2n4123/d2n41232n4124226aa | |
SOT23 MARK Y3Contextual Info: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* |
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2n4124mmbt4124ot-232n4124bu+4 | |
2N4123
Abstract: 2N4124 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4125 2N4126 2n4123 pnp
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2n41232n41242n41252n4126+6 | |
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1N916
Abstract: 2N4124 CBVK741B019 F63TNR MMBT4124 PN2222N
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2n4124mmbt4124ot-231n916+3 | |
transistor
Abstract: transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP
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2n39042n39062n41242n4126+16 | |
MAR 745 TRANSISTOR
Abstract: TRANSISTOR 2N4124 BP317 2N4124 2N4126 2N4124 philips mar 709
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m3d1862n41242n4126mam279+7 | |
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Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor 2N4124 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 25 V). 1 APPLICATIONS DESCRIPTION collector 2 base 3 emitter • General purpose switching and amplification, |
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2n41242n4126 | |
2N4123
Abstract: 2N4124 2N4126 2N4125 2n4123 npn transistor
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2n41232n41242n41252n4126+2 | |
2n3904 2n3906
Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
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2n39042n39062n41232n4124+10 | |
2N4123
Abstract: 2n4124 2n4123 npn transistor
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2n4123/41242n41232n4124625mw+2 | |
2N4124 transistor
Abstract: IC102
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2n41242n4126d-7402518-aug-04+2 | |
2N4124Contextual Info: TOSHIBA TRANSISTOR 2N4124 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICBO*50nA(Max.) lEBO“50nA(Max.) @ Vcb =20V (3 Ve B“3V . Low Saturation Voltage : vCE(sat)=0.3V(Max.) |
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2n41242n4126100mhz | |
TO226AAContextual Info: 2N4124 Small Signal Transistor NPN TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • Especially suitable for AF-driver and low-power output stages. |
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2n4124o-226aa2n4126to226aa | |