2N3904 AMMO PACKAGE Search Results

2N3904G

Abstract: for 2N3904 2N3904RLRA 2n3904
Contextual Info: 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage

2N3904

Abstract: 2N3904RLRA 2N3904G 2N3903 2N3903RLRM 2N3904RLRAG 2N3904RLRM 2N3904RLRMG 2N3904RLRP
Contextual Info: 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage

2N3904G

Abstract: 2N3904 ammo package 2N3904RLRA
Contextual Info: 2N3903, 2N3904 General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage

2N3904G

Abstract: 2n3904 2N3904 hfe 2N3904RLRA
Contextual Info: 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage

2N3904

Abstract: 2N3904RLRA 2N3903 2N3903RLRM 2N3904G 2N3904RLRAG 2N3904RLRE 2N3904RLRM 2N3904RLRMG 2n3904 transistors
Contextual Info: 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage

2n3904 TO-92

Abstract: 2N3904 plastic 2N3904 2N3904 ammo package 2N3903 2n3904 npn 2N3904 mold
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3903 / 2N3904 NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E BC General Purpose Switching And Amplifier Applications

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3903 / 2N3904 NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E BC General Purpose Switching And Amplifier Applications

2N3903

Abstract: 2N3904 2N3904 equivalent h 2n3904 2N3904 hfe 2N3904RLRA
Contextual Info: 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO

2N3904

Abstract: equivalent al 2n3904 2n3904 application 2N3904RLRA 2N3904 equivalent 2N 3904 transistor 2N3903 2N3903RLRM 2N3904RL1 2N3904RLRE
Contextual Info: 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO

2N3904RA

Abstract: 2N3904RM 2N3904RP 2N3904TA 2n3904 TRANSISTOR npn SOT23 JEDEC standard orientation pad size JEDEC 2N3904 2N3904 SOT-23 MARKING CODE
Contextual Info: MMBT3904 PZT3904 C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*

2N3904

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3904 Features • • x x • Through Hole Package Capable of 600mWatts of Power Dissipation and 200mA Ic.

2N3904

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3904 Features • • • • • Through Hole Package Capable of 600mWatts of Power Dissipation and 200mA Ic.

Contextual Info: MCC TM Micro Commercial Components 2N3904 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information Capable of 625mW of Power Disspation and 200mA Ic

2n3904 specification

Contextual Info: MCC TM Micro Commercial Components 2N3904 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information Capable of 625mW of Power Disspation and 200mA Ic

Contextual Info: MMBT3904 PZT3904 C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

2N3904 hfe

Abstract: 2n3904 application
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3904 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

Contextual Info: MCC TM Micro Commercial Components 2N3904 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information Capable of 625mW of Power Disspation and 200mA Ic

30VDC

Abstract: 2N3904
Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number 2N3904 product family TO-92 Plastic-Encapsulate Biploar Transistors

Contextual Info: SAMSUNG SEMI CONDUCTOR 14E INC D 1 7^4142 QÜG7323 4 T - ¿ 7 - i MPS6513 ! NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V ceo=30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: SAMSUNG SEMICONDUCTOR INC l^E 0 MPS6520 £ 7^134142 0 G Q 7 3 2 5 Ô | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) \ Characteristic

DB64

Contextual Info: MCC TM Micro Commercial Components 2N3904 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information Capable of 625mW of Power Disspation and 200mA Ic

ztx214 Transistor

Abstract: 2N3904 70570 BC415P 2n4123 transistor ZTX109 DSAIH000142303. transistor 2N5210 BS3934
Contextual Info: ZETEX SEMICOND UCT ORS IbE D • ^70570 GGObam 5 ■ ZETB E-LINE SPECIFICATIONS ~ ^ „ I - c °l audio pre-amplifiers as well as universal applications The transistors on this page are characterised for low noise, low level amplification and are ideally suited for

2n3877 transistor

Abstract: TRANSISTOR 2n3901 2N3693 2N3694 2N3704 2N3705 2N3708 2N3709 2N3710 2N3794
Contextual Info: * TO-92 Piastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) NF Freq c„ CDIL (dB) (MHz) (PF) Case Max Max Style V cbo ^CEO (V) Min (V) Min 2N3693 45 45 4 0.625 0.5 0.05 35 40 160

Contextual Info: * TO-92 Piastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Po 'c (V). (A) Min @Tc=25°c 'c& (mA) NF Freq c„ CDIL (dB) (MHz) (PF) Case Max Max Style V cbo ^CEO (V) Min (V) Min 2N3693