2N3762 Search Results

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr Da ta S h e e t No. 2 N 3 7 6 2 1 1 I I ^88888 % # 1 $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3762 Type 2N3762 G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 378-2982 (212) 227-8008 FAX: (973) 3784080 2N3762 (SILICON) Medium-current PNP silicon annular transistor, designed for high-speed switching and driver applications. MAXIMUM RATINGS |TA • 7»«C urltwoihnww nai

Contextual Info: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. ititn nnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D at a S h e e t No. 2 N 3 7 6 2 L $ idL SEMICONDUCTORS G eneric Part Number: 2N3762L Type 2N3762L G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

2N3762

Contextual Info: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2n3762

Contextual Info: Data Sheet No. 2N3762 Generic Part Number: 2N3762 Type 2N3762 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using

2N3762

Contextual Info: TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 396 Devices 2N3762 2N3762L Qualified Level 2N3763 2N3763L 2N3764 JAN JANTX JANTXV 2N3765 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

SILICON SMALL-SIGNAL DICE

Contextual Info: MOTOROLA SC {D IO DES /OPTO} 34 SILICON SMALL-SIGNAL TRANSISTOR DICE continued D I b3fc725S D037TÌD 34C 37990 T- 3 7 " ( S ' 2C3762 DIE NO. — PNP LINE SOURCE — DSL60 This die provides performance similar to that of the following device types: (SÌ 2N3762

Contextual Info: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2n3762

Abstract: 2N3765 2N3763 2N3762L 2N3763L 2N3764
Contextual Info: TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices 2N3762 2N3762L Qualified Level 2N3763 2N3763L 2N3764 JAN JANTX JANTXV 2N3765 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2N3467

Abstract: 2n3762 chip type geometry 2N37
Contextual Info: Data Sheet No. 2C3762 Generic Packaged Parts: Chip Type 2C3762 Geometry 6706 Polarity PNP 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, 2N3765 30 MILS B E 30 MILS Chip type 2C3762 by Semicoa Semiconductors provides performance

2N3762L

Contextual Info: Data Sheet No. 2N3762L Generic Part Number: 2N3762L Type 2N3762L Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case.

2N3762

Abstract: 2N3763 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R 12E D I b 3b7a5M 00ab3t,7 fl | T - 3 7 -/ r M A X IM U M R A T IN G S Sym bol 2N3762 2N3764 2N3763 2N3765 Coliector-E m itter V olta g e V C EO 40 60 Vdc Collector-B ase V oltag e V cB O 40 60 Vdc Em itter-Base V oltag e vebo 5.0 Vdc ic

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N5146

Abstract: 1000 volt pnp transistor 2N3444 2N3252 2n3253 2N3244 2N3245 2N3467 2N3468 SP3725QDB
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient Pq Type Polarity One Both Side Sides mW mW VCB Volts V ce Volts V eb Volts M in/M ax Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts

2N4122

Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
Contextual Info: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741

2N3025

Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
Contextual Info: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720

2N2369At

Abstract: 2N4237 High-Voltage Amplifiers 2N3546 2N3495 2N4033 MM4001 2N5679 MOTOROLA 2n5680 motorola 2N3114
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MIL-PRF-19500

Abstract: 2N4033 2N3055 2N5038 JANS 2n2222au MIL-PRF-19500/336 MIL-PRF-19500/2n7588 MIL-PRF-19500/391 mil-prf-19500/JANTXV2N6341 2N5415
Contextual Info: New England Semiconductor Announces Its Certified Mil-Prf-19500 JANS Program. JANS Qualification Lots In Process By Family Mil-Prf-19500/251 -2N2219 Mil-Prf-19500/291 -2N2907A Mil-Prf-19500/455 -2N5665 Mil-Prf-19500/251 -2N2219A Mil-Prf-19500/291 -2N2907AUA

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *