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    2N3762 Search Results

    2N3762 Datasheets (45)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N3762
    Central Semiconductor BJT, PNP, Silicon Epitaxial Transistor, IC 1.5A - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1.5 / Hfe=30-120 / fT(Hz)=180M / Pwr(W)=1 Original PDF 74.08KB 2
    2N3762
    Microsemi PNP Switching Silicon Transistor Original PDF 59.8KB 2
    2N3762
    Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1.5 / Hfe=30-120 / fT(Hz)=180M / Pwr(W)=1 Original PDF 10.81KB 1
    2N3762
    Semico Type 2N3762 Geometry 6706 Polarity PNP - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1.5 / Hfe=30-120 / fT(Hz)=180M / Pwr(W)=1 Original PDF 47.14KB 2
    2N3762
    Advanced Semiconductor Silicon Transistors Scan PDF 81.18KB 1
    2N3762
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 312.75KB 1
    2N3762
    Motorola European Master Selection Guide 1986 Scan PDF 62.12KB 1
    2N3762
    Motorola Power Transistor Selection Guide Scan PDF 325.11KB 6
    2N3762
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 87.07KB 1
    2N3762
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 50.25KB 1
    2N3762
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 168.94KB 1
    2N3762
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 172.46KB 1
    2N3762
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 76.9KB 1
    2N3762
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 100.31KB 1
    2N3762
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 118.66KB 1
    2N3762
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 95.62KB 1
    2N3762
    Unknown Vintage Transistor Datasheets Scan PDF 56.91KB 1
    2N3762
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 31.78KB 1
    2N3762
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 31.78KB 1
    2N3762
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 31.78KB 1
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    2N3762 Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc 2N3762

    Transistor GP BJT PNP 40V 1.5A 3-Pin TO-39 - Bulk (Alt: 2N3762)
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    Avnet Americas 2N3762 Bulk 50 Weeks 100
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    Mouser Electronics 2N3762
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    Onlinecomponents.com 2N3762
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    Master Electronics 2N3762
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    Microchip Technology Inc 2N3762L

    Trans GP BJT PNP 40V 1.5A 3-Pin TO-5 Bag - Bulk (Alt: 2N3762L)
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    Master Electronics 2N3762L
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    Microchip Technology Inc 2N3762U4

    Transistor BJT PNP 40V 1.5A 3-Pin TO-39 - Bulk (Alt: 2N3762U4)
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    Master Electronics 2N3762U4
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    Microchip Technology Inc JANTX2N3762

    Power BJT _ TO-39, Projected EOL: 2049-02-05
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    Microchip Technology Inc JANTX2N3762 48 50 Weeks
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    Master Electronics JANTX2N3762
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    Vyrian JANTX2N3762 5,399
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    Microchip Technology Inc JAN2N3762

    Power BJT _ TO-39, Projected EOL: 2049-02-05
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    Microchip Technology Inc JAN2N3762 50 Weeks
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    Master Electronics JAN2N3762
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    2N3762 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr Da ta S h e e t No. 2 N 3 7 6 2 1 1 I I ^88888 % # 1 $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3762 Type 2N3762 G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV


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    2n3762mil-prf-19500/396mil-s-19500/396d PDF

    Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 378-2982 (212) 227-8008 FAX: (973) 3784080 2N3762 (SILICON) Medium-current PNP silicon annular transistor, designed for high-speed switching and driver applications. MAXIMUM RATINGS |TA • 7»«C urltwoihnww nai


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    2n3762 PDF

    Contextual Info: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


    Original
    2n3762o205ad17-jul-02 PDF

    2N3762

    Contextual Info: SEM ICONDUCTOR TECHNICAL DATA 2N3762JAN, JT X , 2 N 3 7 6 3 JA N ,JT X , 2N3764JAN, JT X , 2N3765JAN, JT X , JT X V JT X V JTX V , JA N S JT X V CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkor.Koma N.Y. 11779 Processed per MIL-S-19500 396 PNP Silicon Sm all-Signal Transisto rs


    OCR Scan
    2n3762jan2n3764jan2n3765janmil-s-19500+5o-205aoo-3912n37m7n37m2n3762 PDF

    Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. ititn nnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D at a S h e e t No. 2 N 3 7 6 2 L $ idL SEMICONDUCTORS G eneric Part Number: 2N3762L Type 2N3762L G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV


    OCR Scan
    2n3762lmil-prf-19500/396mil-s-19500/396d PDF

    2N3762

    Contextual Info: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


    Original
    2n3762o205ad1-aug-02 PDF

    Contextual Info: 2N3762+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2n3762freq180mtime35n PDF

    Contextual Info: SEMICONDUCTOR • ■ m h h h b m h b h h h m m » —« — TECHNICAL DATA 2N3762 2N3763 2N3764 2N3765 CRYSTAIONCS 2805 Veterans Highway o N P , ? c iC O n , T - , Small-Signal Transistors Roilkonkoma, N.Y. ,1770 designed lor general-purpose switching applications


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    2n37622n37632n37642n3765 PDF

    2n3762

    Contextual Info: Data Sheet No. 2N3762 Generic Part Number: 2N3762 Type 2N3762 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using


    Original
    2n3762mil-prf-19500/396mil-s-19500/396d PDF

    2N3762

    Contextual Info: TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 396 Devices 2N3762 2N3762L Qualified Level 2N3763 2N3763L 2N3764 JAN JANTX JANTXV 2N3765 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


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    mil-prf-19500/2n37622n3762l2n3763+32n3763l2n37642n3765 PDF

    2N5161

    Abstract: KT814a B0136 35N15 NS02 KT814B B0826
    Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 MH0811 MH0812 MH0813 2SA1220 2SA766 2SA1220A 2N3762A 2N3762A ~~~~g~A 30 2SA738 PE8550 JE9112A 2SA683 2SA751 JE9112B JE8550B JE8550B - j~~~~g 25 35 -40 JE8550C JE85500 JE85500 JE91120 2N3660 PE8551 NB321K


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    2sa1486trsp60062sa1413ztrsp7006+12trsp80062sbl1412sa14382sa1562mh08212n5161kt814ab013635n15ns02kt814bb0826 PDF

    2N3762

    Abstract: TO206AB 2N3763S
    Contextual Info: TECHNICAL DATA 2N3762, 2N3762L JAN, JTX, JTXV 2N3763, 2N3763L JAN, JTX, JTXV 2N3764 JAN, JTX, JTXV 2N3765 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/396 PNP SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N3762, L 2N3764 2N3763, L


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    2n37622n3762l2n37632n3763l+52n37642n3765mil-prf-19500/396to206ab2n3763s PDF

    2N3762

    Contextual Info: M A X IM U M RATINGS Symbol Value C o llector-E m itter Voltage VCEO -4 0 Vdc C ollector-Base Voltage VCBO -4 0 Vdc Em itter-Base Voltage vebo - 5 .0 Vdc 'c - 1 .5 Ade Rating C ollector C urrent — Continuous Unit TO-39 2N3762 Total Device D issipation n T a = 2 5 X


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    2n3762 PDF

    Contextual Info: 2N3762+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    2n3762freq180mtime35n PDF

    Contextual Info: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


    Original
    2n3762o205ad19-jun-02 PDF

    2n3762

    Abstract: 2N3765 2N3763 2N3762L 2N3763L 2N3764
    Contextual Info: TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices 2N3762 2N3762L Qualified Level 2N3763 2N3763L 2N3764 JAN JANTX JANTXV 2N3765 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


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    mil-prf-19500/3962n37622n3762l2n3763+32n3763l2n37642n3765 PDF

    2N3467

    Abstract: 2n3762 chip type geometry 2N37
    Contextual Info: Data Sheet No. 2C3762 Generic Packaged Parts: Chip Type 2C3762 Geometry 6706 Polarity PNP 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, 2N3765 30 MILS B E 30 MILS Chip type 2C3762 by Semicoa Semiconductors provides performance


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    2c37622n34672n3467l2n3468+72n3468l2n37622n3762l2n37632n3763lchip type geometry2n37 PDF

    2N3762L

    Contextual Info: Data Sheet No. 2N3762L Generic Part Number: 2N3762L Type 2N3762L Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case.


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    2n3762lmil-prf-19500/396mil-s-19500/396d PDF

    2N3762

    Abstract: 2N3763 MOTOROLA
    Contextual Info: MOTOROLA SC XSTRS/R 12E D I b 3b7a5M 00ab3t,7 fl | T - 3 7 -/ r M A X IM U M R A T IN G S Sym bol 2N3762 2N3764 2N3763 2N3765 Coliector-E m itter V olta g e V C EO 40 60 Vdc Collector-B ase V oltag e V cB O 40 60 Vdc Em itter-Base V oltag e vebo 5.0 Vdc ic


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    2n37622n37642n37632n3765+200ab3t2n3763 motorola PDF

    2N3762

    Contextual Info: 2N3762 Chip: 5.0V; 1.5A; Geometry 6706; Polarity PNP 8.39 Transistors. 1 of 2 Home Part Number: 2N3762 Online Store 2N3762 Diodes C hip: 5 .0 V; 1 .5 A; G eo m et ry 6 7 0 6 ; Po larit y PNP Transistors


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    2n3762com/2n3762 PDF

    2N3762

    Abstract: 2N3763
    Contextual Info: DATA SHEET 2N3762 2N3763 PNP SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3762 and 2N3763 types are Silicon PNP Epitaxial Planar Transistors designed for core driver applications. MAXIMUM RATINGS TA=25°C Collector-Base Voltage


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    2n37622n3763100ma PDF

    Contextual Info: 2N3762+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2n3762freq180mtime35n PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF

    MJ10009

    Abstract: 1N4937 2N3762 MTP3055E
    Contextual Info: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,


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    mj10009r14525mj10009/d1n4937+22n3762mtp3055e PDF