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Contextual Info: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643
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bf3702n27122n2714bc368+6bf254bf494bf495bf496bf9592n2924
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n3860
Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394
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2n27112n27122n27132n2714+82n29232n29242n29252n29262n33902n3391n38602n292
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Contextual Info: Bipolar Transistors Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222
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bf3702n27122n2714bc368+6bf254bf494bf495bf496bf9592n2924
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2N4265
Abstract: Sprague Electric 2N5832 2N3859 2N2926-1 660111 sprague TO92 2N3404 NPN 2N4062 2N2712
Contextual Info: SPRAGUE BIPOLAR TRANSISTORS • BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES 2N TRANSISTORS • Sm all-signal TO-92 plastic transistors. JEDEC ‘2N’ registered types. Catalog Number Case Style PD , = 25°C mW 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924
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2n27112n27122n27132n2714+152n29232n29262n33952n33962n33972n33982n4265sprague electric2n58322n38592n2926-1660111sprague to922n3404 npn2n4062
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2n2712 data sheet
Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0
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2n27122n27142n29232n2924+102n29252n42892n44002n2712 data sheet2n3711 equivalent2n39042n40582n29262n33932n3859a equivalent to pnp
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2N2924
Abstract: 2N3856 2N3404 2N2712 2N2714 2N3856A 2n2923 2N3405 n3860 2N2711
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394
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2n27112n27122n27132n2714+112n29232n29242n29252n29262n33902n33912n38562n34042n3856a2n3405n3860
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2N2925
Abstract: 2N3405 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394
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2n27112n27122n27132n2714+82n29232n29242n29252n29262n33902n33912n3405n3860
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2N3402
Abstract: 2n3404 2N3405 2N3403 2N3638 N3404 2N2711 2N2712 2N2713 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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2n27112n27122n27132n2714+122n29232n29242n29252n29262n33902n33912n34022n34042n34052n34032n3638n3404
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TRANSISTOR 2n3901
Abstract: 2N390 pnp 2N3901 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390
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2n27112n27122n27132n2714+92n29232n29242n29252n29262n33902n3391transistor 2n39012n390 pnp2n3901
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2N3643
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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2n27112n27122n27132n2714+72n29232n29242n29252n29262n33902n33912n3643
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2N2713
Abstract: 2N2714 2N2926 equivalent 2n2714 transistor 2N3404 2N2924 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor 2N2712
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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2n27112n27122n27132n2714+122n29232n29242n29252n29262n33902n33912n2926 equivalent2n2714 transistor2n34042n3391 equivalent2n3392 equivalentnpn/2n2714 transistor
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2N9860
Abstract: 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N2711 2N2712 2N3858 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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2n27112n27122n27132n2714+132n29232n29242n29252n29262n33902n33912n98602n38692n38802n3856n3860transistor 2n32n3858
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2N3877
Abstract: 2n3877a GES6220 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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2n27112n27122n27132n2714+92n29232n29242n29252n29262n33902n33912n38772n3877ages6220
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T4 3570
Abstract: transistor t4 3570 2N2712 transistor 2n2712 2N2711 2N2713 2N3900 2N2646 2N3405 n3860
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390
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2n27112n27122n27132n2714+132n29232n29242n29252n29262n33902n3391t4 3570transistor t4 3570transistor 2n27122n39002n26462n3405n3860
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ST3904
Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
Contextual Info: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.
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st3904ns3903tis922n2926+6ns39042n2926 ses2n915mpq39042n36942n2712
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beta transistor 2N2222
Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
Contextual Info: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V
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2n27112n27122n27132n2714+15150ma2n29232n29242n29252n3976m23p-xs16beta transistor 2n22222n2924 equivalentbeta dc of transistor 2n22222n2925 equivalent1n9148beta transistor 2n27122n2905 2n22192n3390 equivalentbeta transistor 150
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2N3394
Abstract: 2N2925 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926 2N3390
Contextual Info: SILICON SIGNA L TRANSIST ORS G E N E R A L PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hF E Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925
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2n27112n27122n27132n2714+72n29232n29242n29252n29262n33902n33912n3394
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2n2926 transistor
Abstract: TRANSISTOR 2n3901 2N2926 NPN high power transistor beta transistor 150 2N3404 2N2711 2n3877 transistor 2N2714 2N2923
Contextual Info: SILICON S IG N A L TR A N S IS T O R S G E N E R A L PURPOSE A M PLIFIER S TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (SA T ) hF E Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924
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2n27112n27122n27132n2714+122n29232n29242n29252n29262n33902n33912n2926 transistortransistor 2n3901npn high power transistorbeta transistor 1502n34042n3877 transistor
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2N2926 equivalent
Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A
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50/ia800maget706get708+15get914get3013get3646ge1705cet7082n2926 equivalentbeta transistor 2n22222n3392 equivalent2n3416 equivalent2n3393 equivalent2n3900a2n3394 equivalent2n3859a equivalent to pnp1n45322n5232a equivalent
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beta transistor 2N2222
Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003
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50/ia800maget706get708+15get914get3013get3646ge1705cet708beta transistor 2n22221n45321n91482n2926 equivalent2n rf transistor2n52492n6006diode 1n36052n4424 equivalent2n6002
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Contextual Info: ALLEGRO MICROSYSTEMS 8514019 INC SPRAGUE. T3 » • G50433Ö G003SÖS SEM ICO ND S/ ICS 93D G ■ AL6R 03 585 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C *CBO Max. ^ BRICBO V r CEO V(BR)EBO Max. (a ^CB »W hFE Oi ic
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g50433g003stp918tp930+6tp2218tp2218atp2219tp2219atp2221tp2221a
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2N2712
Abstract: 2N3606 2N3397 2N3564
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings V CEO (V) Min (V) Min 18 13 (V) Min 5 PD (W) (A) §Tfc25“c (mAI Max 0.1 0.5 0.625 *CBO va i *CES (V) (mA) Max 18 hrE '“CF @ (V L @ Min Max 75 225 lc X (mA) 2 ^CE V CE(SAT) (VI (V) Max V BE(SAn
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o-92-12n27122n36062n3397+12n3564
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2N4058
Abstract: 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff
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2n27122n27142n29232n2924+102n42642n42872n42892n44002n40582n29252n29262n3391a2n33922n3393
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n3904
Abstract: 2N3706 2N4289 "low noise" npn QDD2421 2n4287
Contextual Info: Small Signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VCBO v CEO v EBO •CBO ä V c B C nA (V) (V) (V) (V) '■c e s *VCES *'CEV MIN MIN MIN MAX vCE © l c v C E (S i L T ) 'C c ob h FE (V) (mA) (V) (mA) ‘hfe(1 kHZ) MIN MAX NF ‘off
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2n27122n27142n29232n2924+112n29252n29262n41252n41262n42642n4287n39042n37062n4289low noise" npnqdd2421
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