2N2369 TRANSISTOR Search Results

2N2369

Abstract: 2N2369 transistor J 2N2369 2N2369A
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With

2n2369

Abstract: 2N2369A 2N2369 transistor transistor 2n2369
Contextual Info: 2N2369 2N2369A* *also available as JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN TRANSISTORS • HIGH CURRENT GAIN • FAST SWITCHING • HIGH FREQUENCY M A X IM U M R A T IN G S R A T IN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2N2369 transistor pulse generator

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • ^ 5 3 ^ 3 1 OOSflOTM TT7 APX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistor in a TO-18 metal envelope with the collector connected to the case. The 2N2369 is primarily intended for use in very high-speed saturated switching and v.h.f. amplification.

mps 2369 M

Abstract: 2N3117 MPS 3117 2n2405 2N5769 JSW 70 2n2484 2N2586 mps 2369 AM 27533 DC
Contextual Info: FAIRCHILD SEMICONDUCTOR n ra n B B A4 DE I BLl b ci b 7 4 UUdí'iJdb n I 2N/PN/MPS/FTS02369 2N/PN/MPS/FTS02369A. 2N/FTS05769 i FAIRCHILD A Schlum berger C om pany NPN High Speed Saturated Switches • • • • PACKAGE 2N2369 2N2369A 2N5769 PN2369 PN2369A

2N2369

Abstract: 2N2369 equivalent
Contextual Info: MOTOROLA O rd e r th is d o c u m e n t SEMICONDUCTOR TECHNICAL DATA b y 2 N 2 3 6 9 /D Switching Transistors 2N2369 2N2369A* NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS R ating Sym bol V alu e U nit C o lle c to r-E m itte r Voltage VCEO 15 Vdc C o lle c to r-E m itte r Voltage

BS9365

Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

Contextual Info: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies

transistor 2N 3904

Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. Th e molded package is identical to that used with most

2N2102

Abstract: 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89 2N2905A complement
Contextual Info: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed sw itching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

2N2102

Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er am plification from D C to radio frequencies in Com mercial, Industrial and M ilitary

2N2477

Abstract: 2N2219 transistor 2N2475 ZT184 2N2218 2N2219 2N2220 2N2221 2N2222 2N2904
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*

transisTOR C124

Abstract: c124 transistor transisTOR C123 bav21 29C125 3P1012 G103 1kV transistor c128
Contextual Info: 100MHz Low Cost Triple CRT Driver CORPORATION CVA2412AX FEATURES • • • • • DESCRIPTION Ease of Use Small Heat Sink OSD Option EMI Control Option Excellent Gray Scale Linearity APPLICATIONS • CRT Displays for 1600 x 1280 Resolution with Pixel Clock Frequency up to 270MHz

2n2369 die

Abstract: Signal Path Designer
Contextual Info: Section 4 – Design Considerations Thermal Management Today’s system designer is faced with the problem of keeping ahead when addressing system performance and reliability. ON Semiconductor’s Advanced CMOS helps designers achieve these goals. FACT logic was designed to alleviate many of the

"tunnel diode" oscillator

Abstract: 74123 74123A 2N4393 74AS00 TTL AN13 application circuits of ic 74123 LT1016 precision Sine 1Mhz Wave Generator time delay circuit for ic 74123
Contextual Info: um Application Note 13 A pril 1985 TECHNOLOGY High Speed Com parator Techniques Jim Williams IN TR O D U C TIO N Comparators may be the most underrated and under­ utilized monolithic linear component. This is unfortunate because comparators are one of the most flexible and

Contextual Info: LT1394 u r m TECHNOLOGY 7nS/ |_Qw Power, Single Supply, G round-Sensing C o m p a ra to r DCSCRIPTIOn KfìTUlKS • UltraFast : 7ns ■ Low Power: 6mA ■ Low Offset Voltage: 0.8mV ■ Operates Off Single 5V or Dual ±5V Supplies ■ Input Common Mode Extends to Negative Supply

r107c

Abstract: 2SC622 BFS29P transistor A495 2SC621 SE504 2sc113 2SC804 FET K5010 2SC621A
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N2222 pnp

Abstract: IC free Vernitron potentiometer 2n2222 -331 2n2222 -331 transistors ultrasonic transducer polaroid ultrasonic transducer excitation circuit diode 1N645 ultrasonic Transducer 2Mhz 2n2222 p-n-p
Contextual Info: Application Note 7 February 1985 Some Techniques for Direct Digitization of Transducer Outputs Jim Williams Almost all transducers produce low level signals. Normally, high accuracy signal conditioning amplifiers are used to boost these outputs to levels which can easily drive cables,

cb 7300-12

Contextual Info: LT1073 Micropower DC/DC Converter Adjustable and Fixed 5V, 12V FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO No Design Required Operates at Supply Voltages from 1V to 30V Consumes Only 95µA Supply Current Works in Step-Up or Step-Down Mode

Contextual Info: LT1010 Fast ±150mA Power Buffer FTEATURES n n n n n n n n n DESCRIPTION 20MHz Bandwidth 75V/µs Slew Rate Drives ±10V Into 75Ω 5mA Quiescent Current Drives Capacitive Loads > 1µF Current and Thermal Limit Operates from Single Supply ≥ 4.5V Very Low Distortion Operation

smd transistor 43T

Contextual Info: LT1776 Wide Input Range, High Efficiency, Step-Down Switching Regulator U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Wide Input Range: 7.4V to 40V Tolerates Input Transients to 60V 700mA Peak Switch Rating Adaptive Switch Drive Maintains Efficiency at High

smd transistor 43t

Abstract: 0-30v power supply 1.5A with LM317 IC LM317 use in 12v charger circuit lm317 substitution 48v, 20 amp battery charger circuit diagram LM317 auto charger schottky diode 43t theory of regulated 9v power supply using LM317 LT1776 LT1776CN8
Contextual Info: LT1776 Wide Input Range, High Efficiency, Step-Down Switching Regulator U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Wide Input Range: 7.4V to 40V Tolerates Input Transients to 60V 700mA Peak Switch Rating Adaptive Switch Drive Maintains Efficiency at High

CTX0211128-2

Abstract: tektronix 120-0464-02 NPH-8-100AH 2SK147 2SK147 toshiba He-Ne Laser Power Supply circuits lt1073 equivalent ic Toshiba 2SK147 nuvistor LTC4851
Contextual Info: Application Note 61 August 1994 Practical Circuitry for Measurement and Control Problems Circuits Designed for a Cruel and Unyielding World Jim Williams INTRODUCTION rents associated with the continuous operation of fixed frequency designs. Gated oscillator regulators simply

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

74xx163

Abstract: TRANSISTOR AC125 74xx138 yb4 bridge diode 74ACT161 ac373 motorola 74ACT640 ACT163 10125 ecl to ttl 74ACT244
Contextual Info: DL138/D Rev. 4, May-2001 FACT Device Data FACT Device Data 05/01 DL138 REV 4 FACT Device Data DL138/D Rev. 4, Jun–2001  SCILLC, 2001 Previous Edition  1993 “All Rights Reserved” FACT is a trademark of National Semiconductor Corporation. MOSAIC is a trademark of Motorola, Inc.