2N2369
Abstract: transistor 2n2369 J 2N2369 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification NPN switching transistor 2N2369
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m3d1252n2369mam264sca54+4117047/00/02/pp8transistor 2n2369j 2n2369bp317
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2n2369
Contextual Info: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred Device 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO
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2N2369A
Abstract: 2N2369 2N2369 equivalent 2N2369A MOTOROLA J 2N2369 1N916 2N3227 input impedance of 2N2369 motorola 2n2369
Contextual Info: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred Device 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO
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2n2369/d2n23692n2369a2n2369 equivalent+62n2369a motorolaj 2n23691n9162n3227input impedance of 2n2369motorola 2n2369
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2N2369
Abstract: 2N2369A 2N2369A MOTOROLA 2N2369 motorola 2N2369 equivalent 2N2369 datasheet input impedance of 2N2369 data sheet J 2N2369 motorola 2n2369 1N916
Contextual Info: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors 2N2369 2N2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15
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2n2369/d2n23692n2369a2n2369a motorola+72n2369 motorola2n2369 equivalent2n2369 datasheetinput impedance of 2n2369 data sheetj 2n2369motorola 2n23691n916
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2N2369
Abstract: 2N2369 datasheet 2N2368 2N3227 Am29BDD160GB-65ADPE1 2N2369A 2N4449 2n2369 die 2C2369A chip type geometry
Contextual Info: Data Sheet No. 2C2369A Generic Packaged Parts: Chip Type 2C2369A Geometry 0005 Polarity NPN 2N2368, 2N2369, 2N3227, 2N4449 Chip type 2C2369A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high
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2c2369a2n23682n23692n3227+62n44492n2369a2n2369 datasheetam29bdd160gb-65adpe12n2369 diechip type geometry
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2369A
Abstract: 2N2369 2N2369 datasheet 2N2369 transistor J 2N2369 2N2369A 100MHz-500MHz
Contextual Info: 2N2369, 2369A High Speed Switching Transistors Features: • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power
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2N2369
Abstract: 2N2369 transistor J 2N2369 2N2369A
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With
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2n23692n2369a2n2369/a300us+22n2369 transistorj 2n2369
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2N2369
Abstract: 2N2369A NPN/2N2369
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With
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2N2369 transistor
Abstract: J 2N2369 2n2369 IC 13 J 2N2369A 2N2369A
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With
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2n23692n2369a2n2369/ac-120+42n2369 transistorj 2n2369ic 13j 2n2369a
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2N2369 equivalent
Abstract: 2N3227 2N2369 transistor equivalent transistor 2N2369 2N3227 MOTOROLA 2N2369 D4613 2N3221 transistor 2n2369 motorola semiconductor handbook
Contextual Info: 2N2369 2N3227 NPN SILICON TRANSISTORS LOW CURRENT @ EPITAXIAL “@ HIGH-SPEED for SWITCHING @ @ APPLICATIONS e e . Switching Times and Saturation Voltage Specified at Two Current Levels l= at 10 mA and 100 mA ● @ @ Low Input and Output Capacitance CO~= Ci~ = 4 pf matimum
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2n23692n32272n2369 equivalent2n2369 transistor+6equivalent transistor 2n23692n3227 motorolad46132n3221transistor 2n2369motorola semiconductor handbook
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J 2N2369
Abstract: 2N2369 2N2369A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.
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2N2369
Abstract: J 2N2369 2N2369A
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.
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Lt1016
Abstract: sn1016 lt1016 equivalent LT1220
Contextual Info: LT1016 UltraFast Precision 10ns Comparator FEATURES • ■ ■ ■ ■ ■ U ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking
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lt1016t1016lt1711/lt1712lt1713/lt1714+7lt1715150mhzlt1719/lt1720/lt1721sn10161016fcslt1016 equivalentlt1220
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LT1220
Contextual Info: LT1016 UltraFast Precision 10ns Comparator Features n n n n n n n Description UltraFast 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking
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lt1016100mhzlt1715150mhz+2lt1719/lt1720/lt1721lt1220
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ignition module
Abstract: 2n2369 avalanche cdi ignition timing advance irf740 application note car cdi ignition cdi ignition ELECTRONIC CENTRIFUGAL SWITCH design of ignition and fuel system 800RPM cdi ignition circuit
Contextual Info: APPLICATION NOTE 969 Economic, High Performance, High Efficiency Electronic Ignition with Avalanche-Rated HEXFETs HEXFET is a trademark o f International Rectifier by Brian E. Taylor Introduction Gasoline engine ignition circuits represent a severe environment for
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an966an-969ignition module2n2369 avalanche+8cdi ignition timing advanceirf740 application notecar cdi ignitioncdi ignitionelectronic centrifugal switchdesign of ignition and fuel system800rpmcdi ignition circuit
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sn1016
Abstract: ATIC-17 2N2369 transistor pulse generator LT1016CN8 RCA 2N3866 dual fet q51 74121 application as pulse generator 2N3866 APPLICATION sn7402 equivalent LT1016
Contextual Info: LT1016 UltraFast Precision 10ns Comparator U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking
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lt1016lt1711/lt1712lt1713/lt1714lt1715+12150mhzlt1719/lt1720/lt1721sn10161016fcsatic-172n2369 transistor pulse generatorlt1016cn8rca 2n3866dual fet q5174121 application as pulse generator2n3866 applicationsn7402 equivalent
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mosfet to ignition coil
Abstract: 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition advance ignition
Contextual Info: APPLICATION NOTE 969 Economic, High Performance, High Efficiency Electronic Ignition with Avalanche-Rated HEXFETs HEXFET is a trademark of International Rectifier by Brian E. Taylor Introduction Gasoline engine ignition circuits represent a severe environment for
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00v/divan966an-969mosfet to ignition coil+92n2369 avalanchecdi ignitionignition modulecapacitor, 100 microfarad and 35 voltselectronic car ignition circuit6 volt coil ignitioncdi ignition timing advancecar cdi ignitionadvance ignition
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2n2222a SOT23
Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE
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sc04/categorysc-59ot143ot323+16ot363sc-75ot223bc107bc108bc1092n2222a sot232n3906 sot232n3904 sot323bc557 sot232n2222a sot2232n2222 sot323bd139 sot232n3904 sot23 philipsbc107 sot232n5551 sot23
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4 Position 16 Pin PdT dip switch
Abstract: 74ALS00 74ALS74 National 74hc04 cdi schematics 74LS165 74LS92 AN-502 C1995 DP8459
Contextual Info: I INTRODUCTION This literature describes the hardware and function of a printed circuit board for the evaluation of National Semiconductor’s DP8459 All Code PLL Data Synchronizer The purpose of the board is to assist the user of the chip in becoming familiar with the device features and in understanding its operation The board is configured socketed
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voltage controlled pulse width generator
Abstract: 2N2369
Contextual Info: _ LT1016 Ultra Fast Precision Comparator FCflTURCS DCSCRIPHOn • Ultra Fast 10ns typ ■ Operates Off Single +5V Supply, or ±5V ■ Complementary Output to TTL ■ Low Offset Voltage ■ No Minimum Input Slew Rate Requirement ■ No Power Supply Current Spiking
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lt1016voltage controlled pulse width generator2n2369 |
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Endevco 2215
Abstract: 2n2222 h parameter values HP5082-4204 LT1010 TO-5 hp5082-2810 2N2222 circuit Endevco 104 HP5082-4204 photodiode Endevco amplifier Power AMPLIFIER 6012
Contextual Info: LT1022 High Speed, Precision JFET Input Operational Amplifier U FEATURES • ■ ■ ■ ■ ■ DESCRIPTIO Guaranteed Slew Rate: 23V/µs Min Guaranteed Offset Voltage: 250µV Max – 55°C to 125°C: 750µV Max Guaranteed Drift: 5µV/°C Max Guaranteed Bias Current:
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lt1022180pa500pa254mm+111022faendevco 22152n2222 h parameter valueshp5082-4204lt1010 to-5hp5082-28102n2222 circuitendevco 104hp5082-4204 photodiodeendevco amplifierpower amplifier 6012
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2N2222 chip
Abstract: HP-5082-4204 2n2222 h parameter values HP5082-4204 Endevco 2215 LT318A
Contextual Info: LT1022 High Speed, Precision JFET Input Operational Amplifier FEATURES • ■ ■ ■ ■ U ■ DESCRIPTIO Guaranteed Slew Rate: 23V/µs Min Guaranteed Offset Voltage: 250µV Max – 55°C to 125°C: 750µV Max Guaranteed Drift: 5µV/°C Max Guaranteed Bias Current:
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2N2369 AVALANCHE PULSE GENERATOR
Abstract: 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501
Contextual Info: Application Note 94 May 2003 Slew Rate Verification for Wideband Amplifiers The Taming of the Slew Jim Williams INTRODUCTION Slew rate defines an amplifier’s maximum rate of output excursion. This specification sets limits on undistorted bandwidth, an important capability in A/D driver applications. Slew rate also influences achievable performance in
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an94-11an94-12an94f2n2369 avalanche pulse generator+92n2369 transistor pulse generator2n2369 avalancheavalanche transistor circuits for generatingnanosecond pulse generatoravtechpico electronics 1000vtd1110cten pao transformer2n2501
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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