180PA Search Results

AN8028

Abstract: Power Supply Control IC IAN8028 SIP009-P-0000 pulse transformer fet 3B7 transformer
Contextual Info: Panasonic Voltage Regulators AN8028 Self-excitation RCCArtificial ResonanceType Power-supply Supporting 1CforAC-DC Converter Control • Overview The AN8028 is an 1C for controlling the switching power supply, employing the RCC artificial resonance type con­

HP5082-4204

Abstract: HP5082-4204 photodiode HP-5082-4204 327 LAMP 2N4393 20nW LT1022 LT1055 sine wave Oscillator jfet circuit Absolute Value Circuit
Contextual Info: J k * / / T L i n _ U1Q22 TECHNOLOGY High Speed, Precision JFET Input Operational Amplifier t A F€flTUft€S •Guaranteed Slew Rate ■Guaranteed Offset Voltage -5 5 °C to 125°C ■Guaranteed Drift ■Guaranteed Bias Current 70°C 125°C

a1870

Abstract: A177N A187A A170PB 1N3261 1N3262 A170A A177 A180 A180A
Contextual Info: RECTIFIERS 100 TO 150 AMPERES JIE DEC TYPE GE TYPE SPECIFICATIONS •f 1N 3 2 8 9 -9 6 A 170 A 177 - A180 A 187 A V operation) 100 10 0 100 160 150 150 T c = <°C> 130 13 0 130 125 143 110 M ax. average fo rw ard current (1 phase m 1 N 3 2 6 0 -7 5 A70

MAX1488ECPD

Contextual Info: ADVANCE INFORMATION All inform ation in this data sheet is prelim inary and subject to chanqe 8/95 ± 1 5 k V ESD-Protected, Quad, Low -Pow er R S-232 Line D river The M AX1488E is pin c o m p a tib le w ith the M C1488, M C 1 4C 88 , S N 7 5 1 8 8 , S N 7 5 C 1 8 8 , D S 1488, and

kb3926

Abstract: kb3926 d3 MAX8774 MCP67D Maxim MAX8774 kb3920 short stop 12v p18 30a kb3926 d2 ac30 c51 100v 10p quanta at1
Contextual Info: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2

LTC1553CSW

Contextual Info: m m & L ^ E L E ñ S E Finol Electrical Specifications L ir m LTC1553 5-Bit Program m able Synchronous Switching Regulator Controller for Pentium Pro Processor TECHNOLOGY F e b ru a ry 1997 F€ATUA€S DCSCRIPTIOn • 5-Bit Digitally Programmable 1,8V to 3.5V Fixe

Contextual Info: Dual and Quad Micropower Chopper Stabilized, RRIO Operational Amplifiers ISL28233, ISL28433 Features The ISL28233 and ISL28433 are dual and quad micropower, chopper stabilized operational amplifiers that are optimized for single and dual supply operation from 1.8V to 6.0V and ±0.825V

Endevco 2215

Abstract: 2n2222 h parameter values HP5082-4204 LT1010 TO-5 hp5082-2810 2N2222 circuit Endevco 104 HP5082-4204 photodiode Endevco amplifier Power AMPLIFIER 6012
Contextual Info: LT1022 High Speed, Precision JFET Input Operational Amplifier U FEATURES • ■ ■ ■ ■ ■ DESCRIPTIO Guaranteed Slew Rate: 23V/µs Min Guaranteed Offset Voltage: 250µV Max – 55°C to 125°C: 750µV Max Guaranteed Drift: 5µV/°C Max Guaranteed Bias Current:

Contextual Info: Rad Hard 40V Quad Precision Low Power Operational Amplifiers ISL70417SEH Features The ISL70417SEH contains four very high precision amplifiers featuring the perfect combination of low noise vs power consumption. Low offset voltage, low IBIAS current and low

U716

Abstract: U6915 1178Q
Contextual Info: H Enhanced DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM IVfemoiy Suterns I x . Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns Axessto Any New Page

2N2222 chip

Abstract: HP-5082-4204 2n2222 h parameter values HP5082-4204 Endevco 2215 LT318A
Contextual Info: LT1022 High Speed, Precision JFET Input Operational Amplifier FEATURES • ■ ■ ■ ■ U ■ DESCRIPTIO Guaranteed Slew Rate: 23V/µs Min Guaranteed Offset Voltage: 250µV Max – 55°C to 125°C: 750µV Max Guaranteed Drift: 5µV/°C Max Guaranteed Bias Current:

1488E

Contextual Info: yviyjxoM 19-2403; Rev 0; 8/95 ± 1 5 k V ESD -Protected, Quad, Low -P ow er R S -232 Line D river _Features ♦ ESD Protection: ±15kV—Human Body Model *6kV—IEC801-2, Contact Discharge ±15kV—IEC801-2, Air-Gap Discharge ♦ Latchup Free, Even During an ESD Event

A187

Abstract: 1N3261 1N3262 A170A A177 A180 A180A A187A A70A 1n3289-96
Contextual Info: RECTIFIERS 100 TO 150 AMPERES JIE DEC TYPE GE TYPE SPECIFICATIONS 1N 3 2 8 9 -9 6 M ax. average fo rw ard current 1 phase •f m (A V operation) T c = <°C> V RM (surge) 1 N 3 2 6 0 -7 5 A70 A 170 A 177 - A180 A 187 100 10 0 100 160 150 150 130 13 0 130

AN1508

Abstract: AN1509 ISL28117 ISL28117FBBZ ISL281X7SOICEVAL1Z ISL28217 ISL282X7SOICEVAL2Z ISL28417 diode mark T7
Contextual Info: 40V Precision Low Power Operational Amplifiers ISL28117, ISL28217, ISL28417 Features The ISL28117, ISL28217 and ISL28417 are a family of very high precision amplifiers featuring low noise vs power consumption, low offset voltage, low IBIAS current and low temperature drift making

28217-B

Contextual Info: 40V Precision Low Power Operational Amplifiers ISL28117, ISL28217, ISL28417 Features The ISL28117, ISL28217 and ISL28417 are a family of very high precision amplifiers featuring low noise vs power consumption, low offset voltage, low IBIAS current and low temperature drift

4 bit bcd adder using ic 7483

Abstract: diode lt 8220 8T18+signetics
Contextual Info: C op yrig h t 1 9 7 4 SIGNETICS CORPORATION Signetics Corporation reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible product. Signetics Corporation assumes no responsibility fo r the use o f any circuits described herein and

Contextual Info: Dual and Quad Micropower Chopper Stabilized, RRIO Operational Amplifiers ISL28233, ISL28433 Features The ISL28233 and ISL28433 are dual and quad micropower, chopper stabilized operational amplifiers that are optimized for single and dual supply operation from 1.8V to 6.0V and ±0.825V

non-inverting op-amp Sallen-Key

Contextual Info: 40V Precision Low Power Operational Amplifiers ISL28117, ISL28217, ISL28417 Features The ISL28117, ISL28217 and ISL28417 are a family of very high precision amplifiers featuring low noise vs power consumption, low offset voltage, low IBIAS current and low temperature drift

PJ 52

Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Contextual Info: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

DAC89EX

Abstract: BB-3500 OP01CP AD540JH bb3500 AD308H mA747PC 6502 microprocessor REF05 cookbook for ic 555
Contextual Info: PM 11984DATA B O O K The P M I C o m m itm e n t P M I is c o m m itte d to b u ild in g lo n g te rm c u s to m e r re la tio n s h ip s resulting in m u tu a l g ro w th . At PM I w e d e d ic a t e ourselves to le a d e rs h ip in c u s to m e r service,

analog devices 118a

Abstract: V499
Contextual Info: ISL28233, ISL28433 Features The ISL28233 and ISL28433 are dual and quad micropower, chopper stabilized operational amplifiers that are optimized for single and dual supply operation from 1.65V to 6.0V and ±0.825V to ±3.0V. Their low supply current of 18µA and wide input range enable the

Contextual Info: Radiation Hardened 36V Quad Precision Low Power Operational Amplifier With Enhanced SET Performance ISL70419SEH Features The ISL70419SEH contains four very high precision amplifiers featuring the perfect combination of low noise vs power consumption. Low offset voltage, low IBIAS current and low

Quanta AT8

Abstract: quanta u36 max8774 MCP51 MAX8774 AMD socket s1 C51M CX20549 max8774 pwm Samsung R418 kb3920
Contextual Info: 1 2 PCB STACK UP LAYER 1 : TOP RUN POWER SW LAYER 2 : SGND1 A 3 4 AC/BATT CONNECTOR PG 36,37 BATT CHARGER LAYER 3 : IN1 5 6 PG 38 PG 34 DC/DC +3VSUS +5VSUS LAYER 4 : IN2 DDRII 667mhz DDRII-SODIMM1 LAYER 5 : VCC PG 5 LAYER 7 : SGND2 DDRII 667mhz HT Link PCI-E

KB3920

Abstract: kb3926 mcp67m quanta at1 DQ15 Discrete Nvidia MCP67 kb3926 d3 GFX27M rtl8211b MCP67d
Contextual Info: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2