2MBIT Search Results

Contextual Info: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)

intel 80196 microcontroller

Abstract: 68HC11 68HC12 68HC16 80C251 J1850 PLCC52 PQFP52 PSD913F2 PSD934F2
Contextual Info: PSD913F2 PSD934F2 PSD954F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD9xxF2 – 3.3 V±10% for PSD9xxF2-V ■ Up to 2Mbit of Primary Flash Memory (8 uniform

Contextual Info: Preliminary W28F321BT/TT 2MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide

W39L020

Contextual Info: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.

A25L05PT

Abstract: A25L05PU 25L05P A25L05P A25L10P A25L20P 25L10P
Contextual Info: A25L20P/A25L10P/A25L05P Series 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Document Title 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Revision History History Issue Date

LH28F320BFHE-PBTLF1

Abstract: Flash Memory 32Mbit DQ15DQ0
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 2Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

V54C3128164VAT

Contextual Info: V54C3128164VAT HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 7PC 7 8PC System Frequency fCK 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)

Contextual Info: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)

Contextual Info: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns

Contextual Info: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns

free motion DETECTOR CIRCUIT DIAGRAM

Abstract: motion DETECTOR CIRCUIT DIAGRAM pst5 sine wave pv inverter circuit diagram digital video signal processor IR motion detector MSM518221 QFP100-P-1420-0 TC90A11F toshiba "motion compensation"
Contextual Info: TC90A11F TO SHIBA TENTATIVE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC90A11F MULTI SYSTEM 3DIM . DNR IC FOR VCR TC90A11F is the digital video signal processor, which reduces the noise on the playback video signal of VCR, with the external video memory IC (2Mbit FIFO type).

Contextual Info: w GEC PLE SS EY OCTOBER 1993 S E M I C O N D U C T O R S MV1442 HDB3 ENCODER/DECODER/CLOCK REGENERATOR Supersedes June 1993 edition The MV1442, along with other devices in the GPS 2Mbit PCM signalling series comprise a group of circuits which will perform the common channel signalling and error detection

Contextual Info: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 6Mbit 384K x 16 / 768K x 8 Flash – Bank2: 2Mbit (128K x 16 / 256K x 8) Flash

V54C3128164VAT

Abstract: V54C3128164 AAY3
Contextual Info: V54C3128164VAT HIGH PERFORMANCE 166/143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 6 7 75 8PC System Frequency fCK 166 MHz 143 MHz 133 MHz 125 MHz Clock Cycle Time (tCK3 ) 6 7 ns 7.5 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: Preliminary W28F321BT/TT 2MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide

DS3077

Abstract: MV1441 MV1442 AMI Semiconductor encoder Digital Alarm Clock 40 pin AMI HDB3 APPLICATION
Contextual Info: MV1442 HDB3 Encoder/Decoder/Clock Regenerator DS3077 The MV1442, along with other devices in the Zarlink 2Mbit PCM signalling series comprise a group of circuits which will perform the common channel signalling and error detection functions for a 2.048Mbit PCM transmission link operating in

V54C365804VC

Contextual Info: MOSEL VITELIC V54C365804VC HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8 PRELIMINARY 7 75 8PC 8 System Frequency fCK 143MHz 133MHz 125 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7.5 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: PRELIMINARY V58C2128 804/404/164 SAT HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (404) 4 BANKS X 8Mbit X 4 (164) MOSEL VITELIC Clock Cycle Time (tCK2) 7 75 8 DDR266A DDR266B DDR200 7.5 ns 10 ns 10 ns 7 ns 7.5 ns

39LV010

Abstract: 39lv512 PM39LV010-70VCE 39LV020 pm39lv512-70vce PM39LV512-70JCE PM39LV040-70JCE PM39LV040-70VC S5580 PM39LV010-70JCE
Contextual Info: Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification

M45PE20

Abstract: ST10
Contextual Info: M45PE20 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)

Contextual Info: IS25CD512/010 & IS25LD020 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V – 3.60 V 512Kbit / 1Mbit 2.30 V – 3.60 V (2Mbit)

PQFP44

Abstract: STLC5432 STLC5432Q PQFP4410X10 8192KB
Contextual Info: / = T S G S -TH O M S O N ^ 7 # . [* ^ Â g T ÏÏ!M STLC5432 []© S 2Mbit CEPT & PRIMARY RATE CONTROLLER DEVICE PRODUCT PREVIEW ONE CHIP SOLUTION FROM PCM BUS TO TRANSFORMER(CEPT STANDARD ISDN PRIMARY ACCESS CONTROLLER (COMPATIBLE WITH ETSI, OPTION 1 AND 2)

ISC PSD834F2

Abstract: PSDSOFT EXPRESS
Contextual Info: PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • 5V±10% Single Supply Voltage ■ Up to 2Mbit of Primary Flash Memory (8 uniform sectors, 32K x 8) ■