2LU 07 Search Results

Contextual Info: Inductive sensor for material recognition NI100R-S32XL-2LU-H1141/S950 • Rectangular, height 32 mm ■ Plastic, POM ■ Analog ■ 1x analog output for amplitude evaluation ■ 1x analog output for phase evaluation ■ M12 x 1 connector Wiring diagram NI100R-S32XL-2LU-H1141/S950

S2L20UF

Contextual Info: n - n x V 'C X - Y - Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS S2L20U Package I AX10 200V 1.5 A 26.5±2 •trr3 5 n s I II • 7 -r (i ° H m 26.5« ° @ 2LU 07 •S R S ÍÜ • 7 5 - r jn - f- ju •^ B s O A .P ,^ ft) ffi'E Polarity Type No.

Contextual Info: Super Fast Recovery Diode Axial Diode W tm S2L20U O U T L IN E Unit •mm Package : AX10 W eight 0.65g Typ 200V 1.5A Feature 26.5 • Low Noise • m s 'ix • trr=35ns 26.5 CJ> • trr=35ns H 4- * ffiflJ B M M Main Use M arking tfefl-: • Switching Regulator

Contextual Info: 10 NOTES: 1. FOR ILLUSTRATION PURPOSES, 24 CKT SIZE W AFER IS SHOWN. 2. M ATERIAL : HOUSING : 30% G.F., NYLON 46, UL94V-0, COLOR BLACK. LAST CKT PIN : 0.50MM SQ.PHOSPHOR BRONZE. RIB LOCATIONS VARY DEPENDING ON CKT SIZES. 3. PRODUCT SPECIFICATION PS-87831-027 APPLIES.

2LU 07

Contextual Info: Super Fast Recovery Diode Axial Diode OUTLINE M im S2L20U Unit ! mm Package : AX10 Weight 0.65« T yp 2 0 0 V 1.5A Feature 26.5 • trr=35ns • Low Noise • trr=35ns • OA, • ifflÄ. FA • • • • 26.5 -L -J O . U> M <b\A 2 * t a ® * '« « »

SHINDENGEN DIODE

Contextual Info: U n y n - n z ÿ ' f * - K U tip e Super P ast R ecovery Diode t - k Axial Diode mB-ïffèm S2L20U OUTLINE DIMENSIONS Case: 1.0^ 1 i 4.4 ' 200V 1.5A ¥ YK U < j) ° - •trr3 5 n s T ) : CalhiHlc (2 ) : Anodo t tfc N J W O •¿■tsmmmMw M arking •S R S S

Contextual Info: 10 ASSEMBLY P A R T NO. 0 .5 0 ± 0 .0 5 SQ. TYP VOID CKT CKT |$ - |0 O . 3 O |X |Y © |Z © | 8 7 8 3 1 -7 0 0 0 34 21 A T TIPS BOTH ENDS 87831-7100 34 21 (2 .5 0 ) GOLD MEAS. POINT C K Ttt 1 SECTION G-G •32.00 ■ 0.90 ±0.05 (TYP) M 0 O .2 O I C K Ttt 2

87833-0641

Abstract: 89990-0007
Contextual Info: in 10 3 ASSEMBLY P/N ASSEMBLY P/N ASSEMBLY P/N PACKED IN TUBE PACKED IN TUBE PACKED IN T8.R WITH KAPTON (W/O KAPTON) (WITH KAPTON) RIBS LOCATION VARIES DEPENDING ON CKT. SIZES. CIRCUIT tt 1 87833-0431 87833-0631 87833-0831 87833-1031 87833-1231 87833-5230

transistor 1345

Abstract: CA3246E 4460E 1333E
Contextual Info: S CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features • Description Gain-Bandwidth Product fT . >3G Hz The CA3227 and CA3246 consist of five general purpose sil­

Nebraska Dy-Tronix

Abstract: piher spain nedis piher spain 500 Neltron Delta Electronics CHINA
Contextual Info: WORLDWIDE SALES www.piher.net 81 AUSTRALIA ELECTRONIC DEVELOPMENT SALES PTY LTD. Unit 2A, 11-13 Orion Road Lane Cove , N. South Wales 2066 AUSTRALIA Tel: +61-2-9418-6999 Fax: +61-2-9418-6550 Email: henryloh@edsales.com.au AUSTRIA H.+F. FÖRSTER GES.M.B.H.

C104A

Abstract: C104A-0
Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM Functional D escription I/0 3 is written into the memory location specified on the address pins Ao through Au). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for

2190 ic for lg tv

Abstract: CD 4081 Cmos 2 input and gate IC lg tv electronic board schematic epson FC-135 marking mod 8 ring counter using JK flip flop AM 5766 inverter schematic diagram dc-ac inverter sk a1106 510 power supply using bd 182 BT 4840
Contextual Info: S1X60000 Series DESIGN GUIDE EMBEDDED ARRAY S1X60000 Series DESIGN GUIDE S1X60000 Series DESIGN GUIDE ELECTRONIC DEVICES MARKETING DIVISION EPSON Electronic Devices Website http://www.epsondevice.com This manual was made with recycle papaer, and printed using soy-based inks.

Contextual Info: 10 P /N W /C A P — P /N W /C A P IN TU B E 4 RIBS LO C A TIO N V A R Y D E PEN D IN G ON C KT. S IZ E S IN T & R 8 7 8 3 2 -0 6 1 6 8 7 8 3 2 -0 8 1 6 8 7 8 3 2 -1 4 1 6 8 7 8 3 2 -1 8 1 6 8 7 8 3 2 -2 0 1 6 8 7 8 3 2 -2 6 1 6 8 7 8 3 2 -3 0 1 6 8 7 8 3 2 -3 4 1 6

PLESSEY CLA

Abstract: gh160 FG48
Contextual Info: FEBRUARY 1996 PRELIMINARY INFORMATION DS4375-1.1 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 series is the latest family of gate arrays from GEC Plessey Semiconductors GPS . It consists of 14 fixedsize arrays with the option of building larger optimized arrays

ERICSSON dual band tmb

Abstract: Ericsson LTE
Contextual Info: ERICSSON S October 1998 PBL 386 30/1 Subscriber Line Interface Circuit Description The PBL 386 30/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Digital Loop Carrier, FITL and other telecommunications equipment.

PCM-59

Abstract: PCM58
Contextual Info: Product Description The Adaptive Differential Pulse Code M odulation A D PCM algorithm is a transcoding operation which consists o f encoding 64 kbit/s Pulse Code M odula­ tion (PCM ) to 16, 24, 32, or 40 kbit/s ADPCM and decoding from A D PCM to 64 kbit/s PCM . The m ultichannel processor provides transcoding for both A-law and

CXD1255Q

Abstract: cxa1337 cx-7925b sony frequency synthesizer pll ILX501 lhi 778 cn/A/U 237 BG CXD1149 Semicon volume 1 IU02 icx024
Contextual Info: Semiconductor IC Semiconductor Integrated Circuit Data Book 1992 List of Model Names/ Index by Usage Description CCD Image Sensor Color CCD Image Sensor (Black/White) CCD Image Sensor System Scanning System IC for Video Camera Signal Processing IC for Video

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books