2L SOT23 Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS

fmmt5401

Contextual Info: FMMT5400 FMMT5401 SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 4 - NOVEMBER 1996 Q_ PARTMAR KIN G DETAILS - FMMT5400 - 1LZ FMMT5401 -Z 2L COMPLEMENTARY TYPES- FMMT5400 - FMMT5550 FMMT5401 - FMMT5551 ~ ABSOLUTE MAXIMUM RATINGS.

Contextual Info: FMMT4402 FMMT4403 SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS: FMMT4402 - 2K FMMT4403 - 2L ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2L

1N914

Abstract: LMBT5401LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽ We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G

MARKING 2L

Abstract: MMBT5401 MMBT5551
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: 2L

MMBT5401

Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L

GPO05358

Abstract: TLV4946-2K TLV4946-2L TLV4946K
Contextual Info: TLV4946-2L Value Optimized Hall Effect Latch for Industrial and Consumer Applications Datasheet Rev1.1, 2010-08-02 Sense and Control Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

2L smd transistor

Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

MMBT5401 SOT-23

Abstract: marking 2L 2l sot23 marking transistor marking 2L
Contextual Info: MMBT5401 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to MMBT5551 Ideal for medium power amplification and switching — MARKING: 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: TLV4946-2L Value Optimized Hall Effect Latch for Industrial and Consumer Applications Datasheet Rev1.1, 2010-08-02 Sense and Control Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted

2L smd transistor

Abstract: MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

MMBT5401

Abstract: mark B1 sot23
Contextual Info: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted

mmbt5401

Contextual Info: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted

2L smd transistor

Abstract: TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

SC59

Abstract: TLV4946-2K TLV4946-2L TLV4946K PG-SC59-3-4
Contextual Info: May 2009 TLV4946 Value Optimized Hall Effect Latches for Industrial and Consumer Applications TLV4946K, TLV4946-2K, TLV4946-2L Datasheet R e v1 . 0 Sense and Control Edition 2009-05-04 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG

2N5401 fairchild

Abstract: 2N5401 SOT-23
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transisto r Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: May 2009 TLI4946 High Precision Hall Effect Latches for Industrial and Consumer Applications TLI4946K, TLI4946-2K, TLI4946-2L Datasheet R e v. 1 . 0 Sense and Control Edition 2009-05-04 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG

DTC124XK equivalent

Contextual Info: DTC124XK NPN Bias Resistor Transistor 3* ° '' 0.4 2L The built-in bias resistor allows inverter circuit configu­ ration without external resistors for input. g Pin configuration 1 = Collector/OUT 2 = Base/I N 3 = Emitter/GND m Top View ; Marking DC4 OUT

SC59

Abstract: TLI4946-2K TLI4946-2L TLI4946K
Contextual Info: May 2009 TLI4946 High Precision Hall Effect Latches for Industrial and Consumer Applications TLI4946K, TLI4946-2K, TLI4946-2L Datasheet R e v. 1 . 0 Sense and Control Edition 2009-05-04 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG

2n5401y

Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBT5401

Abstract: 2L d 1N914
Contextual Info: MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Ideal for medium power amplification and switching 3 3 C B Top View 1 1 MARKING 2 K E 2 2L